STD13N60M2

STB13N60M2, STD13N60M2 Datasheet N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages Features TAB Order code TAB STB13N60M2 2 3 2 1 3 STD13N60M2 1 DPAK D2PAK D(2, TAB) VDS@TJMAX. RDS(on) max. ID 650 V 0.38 Ω 11 A • • Extremely low gate charge Excellent output capacitance (COSS) profile • • 100% avalanche tested Zener-protected Package D²PAK DPAK Applications • G(1) Switching applications Description S(3) NG1D2TS3Z These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STB13N60M2 STD13N60M2 Product summary Order code STB13N60M2 Marking 13N60M2 Package D²PAK Packing Tape and reel Order code STD13N60M2 Marking 13N60M2 Package DPAK Packing Tape and reel DS9632 - Rev 5 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com STB13N60M2, STD13N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Value Unit ± 25 V Gate-source voltage ID Drain current (continuous) at TC = 25 °C 11 A ID Drain current (continuous) at TC = 100 °C 7 A IDM (1) Drain current (pulsed) 44 A PTOT Total power dissipation at TC = 25 °C 110 W dv/dt(2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range Tj V/ns - 55 to 150 Operating junction temperature range °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V. Table 2. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-pcb (1) D²PAK Thermal resistance junction-pcb Unit DPAK 1.14 30 °C/W 50 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 3. Avalanche characteristics Symbol DS9632 - Rev 5 Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax.) 2.8 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 125 mJ page 2/23 STB13N60M2, STD13N60M2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off-states Symbol Parameter Test conditions Min. V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 IDSS Zero-gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 5.5 A Typ. Max. Unit V VGS = 0 V, VDS = 600 V 1 µA 100 µA ±10 µA 3 4 V 0.35 0.38 Ω Min. Typ. Max. Unit - 580 - pF - 32 - pF Reverse transfer capacitance - 1.1 - pF Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 120 - pF - 6.6 - Ω - 17 - nC - 2.5 - nC - 9 - nC VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Coss eq. (1) RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 480 V, ID = 11 A, VGS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS9632 - Rev 5 Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) Min. Typ. Max. Unit - 11 - ns - 10 - ns - 41 - ns - 9.5 - ns page 3/23 STB13N60M2, STD13N60M2 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 11 A Source-drain current (pulsed) - 44 A - 1.6 V Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VGS = 0 V, ISD = 11 A ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 297 ns - 2.8 µC - 18.5 A - 394 ns - 3.8 µC - 19 A 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS9632 - Rev 5 page 4/23 STB13N60M2, STD13N60M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for D2PAK Figure 2. Thermal impedance for D2PAK AM15710v1 ID (A) 10 µs ) S( on Op Lim era ite tion d by in th m is ax ar . R ea D is 10 1 100 µs 1 ms 10 ms Tj=150 °C Tc=25 °C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 3. Safe operating area for DPAK AM15711v1 ID (A) Figure 4. Thermal impedance for DPAK GC20460 K 10 µs 100 ) S( on Op Lim era ite tion d by in th m is a ax . R rea D i s 10 1 100 µs 1 ms 10 ms Tj=150 °C Tc=25 °C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 5. Output characteristics AM15712v1 ID (A) VGS=7, 8, 9, 10V 20 6V 10-2 10-5 10-2 tp (s) 10-1 AM15713v1 20 12 12 VDS=18 V 8 4 4 0 0 10-3 ID (A) 16 5V 10-4 Figure 6. Transfer characteristics 16 8 DS9632 - Rev 5 10-1 4V 4 8 12 16 VDS(V) 0 0 2 4 6 8 VGS(V) page 5/23 STB13N60M2, STD13N60M2 Electrical characteristics (curves) Figure 7. Normalized V(BR)DSS vs. temperature AM15714v1 V(BR)DSS (norm) ID=1 mA Figure 8. Static drain-source on-resistance AM15715v1 RDS(on) (Ω) VGS=10 V 1.1 0.370 1.06 0.360 1.02 0.350 0.98 0.340 0.94 0.9 -50 0 100 50 TJ(°C) Figure 9. Gate charge vs. gate-source voltage AM15716v1 VDS VGS (V) 10 (V) VDD= 480 V ID=11 A VDS 500 8 400 6 300 0.330 0 4 2 6 10 8 ID(A) Figure 10. Capacitance variations AM15717v1 C (pF) 1000 Ciss 100 Coss 10 4 200 2 100 0 0 8 4 12 16 0 Qg(nC) Figure 11. Normalized gate threshold voltage vs. temperature AM15718v1 VGS(th) (norm) 1.1 1 0.1 0.1 Crss 1 1.0 100 VDS(V) Figure 12. Normalized on-resistance vs. temperature AM15719v1 RDS(on) (norm) ID = 5.5 A 2.1 ID=250µA 10 VGS = 10 V 1.7 0.9 1.3 0.8 0.9 0.7 0.6 -50 DS9632 - Rev 5 0 50 100 TJ(°C) 0.5 -50 0 50 100 TJ(°C) page 6/23 STB13N60M2, STD13N60M2 Electrical characteristics (curves) Figure 13. Source-drain diode forward characteristics AM15720v1 VSD(V) Figure 14. Output capacitance stored energy AM15721v1 Eoss(µJ) TJ=-50 °C 1 4 TJ=25 °C 0.9 3 0.8 2 0.7 TJ=150 °C 1 0.6 0.5 0 DS9632 - Rev 5 2 4 6 8 10 ISD(A) 0 0 100 200 300 400 500 VDS(V) page 7/23 STB13N60M2, STD13N60M2 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS9632 - Rev 5 page 8/23 STB13N60M2, STD13N60M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS9632 - Rev 5 page 9/23 STB13N60M2, STD13N60M2 D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 21. D²PAK (TO-263) type A package outline 0079457_25 DS9632 - Rev 5 page 10/23 STB13N60M2, STD13N60M2 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS9632 - Rev 5 Typ. 0.40 0° 8° page 11/23 STB13N60M2, STD13N60M2 D²PAK (TO-263) type A package information Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS9632 - Rev 5 page 12/23 STB13N60M2, STD13N60M2 DPAK (TO-252) type A2 package information 4.2 DPAK (TO-252) type A2 package information Figure 23. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev26 DS9632 - Rev 5 page 13/23 STB13N60M2, STD13N60M2 DPAK (TO-252) type A2 package information Table 9. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS9632 - Rev 5 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 14/23 STB13N60M2, STD13N60M2 DPAK (TO-252) type C2 package information 4.3 DPAK (TO-252) type C2 package information Figure 24. DPAK (TO-252) type C2 package outline 0068772_type-C2_rev26 DS9632 - Rev 5 page 15/23 STB13N60M2, STD13N60M2 DPAK (TO-252) type C2 package information Table 10. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS9632 - Rev 5 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 16/23 STB13N60M2, STD13N60M2 DPAK (TO-252) type C2 package information Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm) DS9632 - Rev 5 page 17/23 STB13N60M2, STD13N60M2 D²PAK and DPAK packing information 4.4 D²PAK and DPAK packing information Figure 26. Tape outline DS9632 - Rev 5 page 18/23 STB13N60M2, STD13N60M2 D²PAK and DPAK packing information Figure 27. Reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 11. D²PAK tape and reel mechanical data Tape Dim. DS9632 - Rev 5 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 19/23 STB13N60M2, STD13N60M2 D²PAK and DPAK packing information Table 12. DPAK tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS9632 - Rev 5 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 20/23 STB13N60M2, STD13N60M2 Revision history Table 13. Document revision history Date Revision Changes 22-Apr-2013 1 28-Jun-2013 2 03-Mar-2014 3 First release. – Document status promoted from preliminary data to production data - Minor text changes – Updated: Table 10 and Table 25 - Minor text changes Updated the title, features and the description. DS9632 - Rev 5 12-Sep-2016 4 12-Feb-2019 5 Updated D²PAK (TO-263) type A package information, Section 4.2 DPAK (TO-252) type A2 package information, Section 4.3 DPAK (TO-252) type C2 package information and Section 4.4 D²PAK and DPAK packing information. Updated Section 4 Package information. Minor text changes. page 21/23 STB13N60M2, STD13N60M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 D²PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 DS9632 - Rev 5 page 22/23 STB13N60M2, STD13N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS9632 - Rev 5 page 23/23