STD26P3LLH6

STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features TAB 2 3 1 Order code VDSS RDS(on) max ID PTOT STD26P3LLH6 30 V 0.030 Ω(1) 12 A 40 W 1. @ VGS= 10 V • RDS(on) * Qg industry benchmark DPAK • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate input resistance Figure 1. Internal schematic diagram Applications • Switching applications D(2 or TAB) • LCC converters, resonant converters Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages G(1) S(3) AM11258v1 Table 1. Device summary Note: Order code Marking Package Packaging STD26P3LLH6 26P3LLH6 DPAK Tape and reel For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. February 2014 This is information on a product in full production. DocID023574 Rev 5 1/16 www.st.com Contents STD26P3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ............................................... 8 DocID023574 Rev 5 STD26P3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 12 A Drain current (continuous) at TC = 100 °C 8.5 A Drain current (pulsed) 48 A Total dissipation at TC = 25 °C 40 W -55 to 175 °C 175 °C Value Unit 3.75 °C/W Value Unit 350 mJ ID (1) ID (1) IDM (1)(2) PTOT (1) Tstg Tj Storage temperature Max. operating junction temperature 1. Limited by wire bonding. 2. Pulse width limited by safe operating area. Table 3. Thermal data Symbol Rthj-case Parameter Thermal resistance junction-case max Table 4. Avalanche characteristics Symbol EAS Note: Parameter Single pulse avalanche energy (starting TJ=25 °C, ID=6 A, IAS=12 A, VDD=25 V, Vgs=10 V) For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DocID023574 Rev 5 3/16 16 Electrical characteristics 2 STD26P3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown Voltage ID = 250 μA, VGS= 0 Min. Typ. Max. 30 Unit V Zero gate voltage drain current (VGS = 0) VDS = 30 V 1 μA VDS = 30 V, Tc = 125 °C 10 μA Gate body leakage current VGS = ± 20 V, (VDS = 0) ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2.5 V Static drain-source onresistance VGS = 10 V, ID = 6 A 0.024 0.03 Ω RDS(on) VGS = 4.5 V, ID = 6 A 0.038 0.045 Ω Min Typ. Max. Unit - 1450 - pF - 178 - pF - 120 - pF IDSS IGSS 1 Table 6. Dynamic Symbol Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Note: 4/16 Parameter Test conditions VDS = 25 V, f=1 MHz, VGS = 0 Gate input resistance VDD = 24 V, ID = 12 A VGS = 4.5 V (see Figure 14) - 12 - nC - 4.4 - nC - 5 - nC f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, ID = 0 - 1.8 - Ω For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DocID023574 Rev 5 STD26P3LLH6 Electrical characteristics Table 7. Switching on/off (inductive load) Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 24 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) Rise time Turn-off delay time Fall time Min. Typ. Max. Unit - 15 - ns - 15 - ns - 24 - ns - 21 - ns Min. Typ. Max. Unit Table 8. Source drain diode Symbol Parameter Test conditions Source-drain current - 12 A ISDM(1) Source-drain current (pulsed) - 48 A VSD(2) Forward on voltage ISD = 12 A, VGS = 0 - 1.1 V trr Reverse recovery time - 15 ns Qrr Reverse recovery charge - 6.5 nC IRRM Reverse recovery current ISD = 12 A, di/dt = 100 A/μs, VDD = 16 V (see Figure 15) - 0.9 A ISD 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DocID023574 Rev 5 5/16 16 Electrical characteristics 2.1 STD26P3LLH6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15963v1 ID (A) Tj=175°C Tc=25°C Single pulse 100µs 1ms m 10ms Li 1 O D S( on ) pe ra ite tion d by in t m his ax a R rea is 10 0.1 0.1 10 1 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM15964v1 ID (A) 10V 35 9V8V 7V 6V AM15965v1 ID (A) VDS=1V 35 5V 30 30 25 25 4V 20 20 15 15 10 10 3V 5 5 0 0 0 0.2 0.4 0.6 0.8 1 1.2 VDS(V) Figure 6. Gate charge vs gate-source voltage AM15966v1 VGS (V) 2 0 4 8 6 VGS(V) Figure 7. Static drain-source on-resistance AM15967v1 RDS(on) (mΩ) VGS=10V 12 40.0 10 30.0 8 6 20.0 4 10.0 2 0.0 0 0 6/16 4 8 12 16 20 24 28 Qg(nC) DocID023574 Rev 5 0 2 4 6 8 10 ID(A) STD26P3LLH6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM15968v1 C (pF) 1600 AM15969v1 VGS(th) (norm) ID=250µA 1 1400 Ciss 1200 0.8 1000 0.6 800 0.4 600 400 0.2 200 0 0 Coss Crss 5 15 10 0 -55 -30 -5 25 VDS(V) 20 Figure 10. Normalized on-resistance vs temperature AM15970v1 RDS(on) 20 45 70 95 120 TJ(°C) Figure 11. Normalized VDS vs temperature AM15971v1 VDS (norm) (norm) ID=6A 1.6 1.08 1.4 ID=1mA 1.06 1.2 1.04 1 1.02 0.8 1 0.6 0.98 0.4 0.96 0.2 0 -55 -30 5 20 45 70 95 120 TJ(°C) 0.94 -55 -30 5 20 45 70 95 120 TJ(°C) Figure 12. Source-drain diode forward characteristics AM15972v1 VSD (V) TJ=-55°C 1 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 2 4 6 8 10 ISD(A) DocID023574 Rev 5 7/16 16 Test circuits 3 STD26P3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit AM11255v1 Figure 15. Test circuit for diode recovery behavior AM11256v1 Figure 16. Unclamped inductive load test circuit L VD 2200 μF 3.3 μF VDD ID Pw D.U.T. VGS AM11257v1 AM18080v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 DocID023574 Rev 5 10% AM01473v1 STD26P3LLH6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID023574 Rev 5 9/16 16 Package mechanical data STD26P3LLH6 Figure 19. DPAK (TO-252) type A drawing 0068772_M_type_A 10/16 DocID023574 Rev 5 STD26P3LLH6 Package mechanical data Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0° 8° DocID023574 Rev 5 11/16 16 Package mechanical data STD26P3LLH6 Figure 20. DPAK (TO-252) type A footprint (a) Footprint_REV_M_type_A a. All dimensions are in millimeters 12/16 DocID023574 Rev 5 STD26P3LLH6 5 Packaging mechanical data Packaging mechanical data Figure 21. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID023574 Rev 5 13/16 16 Packaging mechanical data STD26P3LLH6 Figure 22. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 14/16 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID023574 Rev 5 18.4 22.4 STD26P3LLH6 6 Revision history Revision history Table 11. Document revision history Date Revision 22-Aug-2012 1 First release 31-Jan-2013 2 – Modified: RDS(on) on the title, Features table and Table 5 – Modified: typical values on Table 6, 7, 8 – Modified: VSD max value on Table 8 – Updated: Section 4: Package mechanical data 16-Jul-2013 3 – Modified: VGS and ID=100 °C values in Table 2 – Modified: RDS(on) max value in Table 5, Figure 13, 14 and 15 – Inserted: Section 2.1: Electrical characteristics (curves) 10-Sep-2013 4 – Updated Qg value in Table 6: Dynamic. 5 – – – – – 06-Feb-2014 Changes Added: Table 4: Avalanche characteristics Modified: Figure 2, 5 and 12 Updated: Section 4: Package mechanical data Added: Figure 16, 17 and 18 Minor text changes DocID023574 Rev 5 15/16 16 STD26P3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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