STD90NS3LLH7

STD90NS3LLH7 N-channel 30 V, 2.8 mΩ typ., 80 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD90NS3LLH7 30 V 3.4 mΩ 80 A 57 W     Figure 1: Internal schematic diagram Applications  D(2, TAB) Very low on-resistance Very low gate charge High avalanche ruggedness Embedded Schottky diode Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. G(1) S(3) NG1D2TS3Sch Table 1: Device summary Order code Marking Package Packing STD90NS3LLH7 90NS3LLH7 DPAK Tape and reel February 2016 DocID025367 Rev 4 This is information on a product in full production. 1/14 www.st.com Contents STD90NS3LLH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 5 2/14 4.1 DPAK (TO-252) type A package information..................................... 8 4.2 DPAK (TO-252) packing information ............................................... 11 Revision history ............................................................................ 13 DocID025367 Rev 4 STD90NS3LLH7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 65 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 57 W -55 to 150 °C ID(1) IDM(1)(2) PTOT (1) Tstg Storage temperature Tj Operating junction temperature Notes: (1)This value is rated according to Rthj-c and limited by wire bonding (2)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Rthj-pcb (1) Rthj-case Parameter Value Thermal resistance junction-pcb max 50 Thermal resistance junction-case max 2.2 Unit °C/W Notes: (1)When mounted on a 1 inch², FR-4 board, 2oz Cu DocID025367 Rev 4 3/14 Electrical characteristics 2 STD90NS3LLH7 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Min. Typ. Max. Drain-source breakdown voltage ID = 1 mA, VGS = 0 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 24 V 500 µA IGSS Gate-body leakage current VGS = ±20 V, VDS = 0 V ±100 nA Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) RDS(on) 30 Unit V 1.2 V VGS = 10 V, ID = 40 A 2.8 3.4 mΩ VGS = 4.5 V, ID = 40 A 4.1 5.3 mΩ Min. Typ. Max. Unit - 2110 - - 640 - - 42 - - 13.7 - - 7.5 - - 3.3 - 0.4 0.7 2 Ω Test conditions Min. Typ. Max. Unit VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 12: "Test circuit for resistive load switching times" and Figure 17: "Switching time waveform") - 26.4 - - 10.4 - - 31.8 - - 12.5 - Min. Typ. Max. Unit - 0.4 0.7 V - 35.2 ns - 26.4 nC - 1.5 A Static drain-source on-resistance Table 5: Dynamic Symbol Ciss Parameter Test conditions Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDD = 15 V, ID = 80 A, VGS = 4.5 V (see Figure 13: "Test circuit for gate charge behavior" f = 1 MHz, gate DC; Bias = 0, test signal level = 20 mV, ID = 0 A pF nC Table 6: Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time ns Table 7: Source drain diode Symbol VSD(1) Parameter Test conditions Forward on voltage ISD = 2 A, VGS = 0 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ID = 40 A, di/dt = 100 A/µs, VDD = 20 V (see Figure 14: "Test circuit for inductive load switching and diode recovery times") Notes: (1)Pulsed: 4/14 pulse duration = 300 µs, duty cycle 1.5% DocID025367 Rev 4 STD90NS3LLH7 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID025367 Rev 4 5/14 Electrical characteristics 6/14 STD90NS3LLH7 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature DocID025367 Rev 4 STD90NS3LLH7 3 Test circuits Test circuits Figure 12: Test circuit for resistive load switching times Figure 13: Test circuit for gate charge behavior Figure 14: Test circuit for inductive load switching and diode recovery times Figure 15: Unclamped inductive load test circuit Figure 16: Unclamped inductive waveform DocID025367 Rev 4 Figure 17: Switching time waveform 7/14 Package information 4 STD90NS3LLH7 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 18: DPAK (TO-252) type A package outline 0068772_A_21 8/14 DocID025367 Rev 4 STD90NS3LLH7 Package information Table 8: DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 5.10 5.25 6.60 1.00 0.20 0° DocID025367 Rev 4 8° 9/14 Package information STD90NS3LLH7 Figure 19: DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_21 10/14 DocID025367 Rev 4 STD90NS3LLH7 4.2 Package information DPAK (TO-252) packing information Figure 20: DPAK (TO-252) tape outline DocID025367 Rev 4 11/14 Package information STD90NS3LLH7 Figure 21: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 12/14 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID025367 Rev 4 18.4 22.4 STD90NS3LLH7 5 Revision history Revision history Table 10: Document revision history Date Revision 17-Apr-2014 1 First release. 2 Text and formatting changes throughout document Removed all TO-220 (STP90NS3LLH7) package references and data On cover page: - updated title and Features In section Electrical ratings updated table Absolute maximum ratings In section Electrical characteristics - updated and renamed table Static (was On /off states) - updated tables Dynamic and Source drain diode Added section Electrical characteristics (curves) Updated and renamed section Package information (was Package mechanical data) 29-Oct-2015 3 Updated title and features in cover page. Updated Table 2: "Absolute maximum ratings", Table 5: "Dynamic" and Figure 2: "Safe operating area". Minor text changes. 10-Feb-2016 4 Document status promoted from preliminary to production data. 07-Sep-2015 Changes DocID025367 Rev 4 13/14 STD90NS3LLH7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 14/14 DocID025367 Rev 4