STD815CP40

STD815CP40 Complementary transistor pair in a single package Datasheet — production data Features ■ Low VCE(sat) ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description The STD815CP40 is a hybrid complementary pair of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. Figure 1. Internal schematic diagram The STD815CP40 is housed in dual island DIP-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in a new solution for compact fluorescent lamp (CFL). Table 1. Device summary Order code Marking Package Packing STD815CP40 D815CP40 DIP-8 Tube October 2012 This is information on a product in full production. Doc ID 14829 Rev 4 1/11 www.st.com 11 Electrical ratings 1 STD815CP40 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value VCBO Collector-base voltage (IE = 0) VCEO Collector-emitter voltage (IB = 0) VEBO Emitter-base voltage (IC = 0, IB = 0.75 A, tp < 10 ms) 700 500 V V V(BR)EBO V 1.5 A 3 A Base current 0.75 A Base peak current (tP < 1 ms) 1.5 A PTOT Total dissipation at Tamb = 25 °C single transistor 2.6 W PTOT Total dissipation at Tcase = 25 °C single transistor 45 W TSTG Storage temperature - 65 to 150 °C 150 °C Value Unit Thermal resistance junction-ambient (single transistor) 48 °C/W Thermal resistance junction-case (single transistor) 2.7 °C/W Collector current ICM Collector peak current (tP < 5 ms) IB IBM TJ Max. operating junction temperature Table 3. Symbol RthJA (1) RthJC (1) Thermal data Parameter 1. When mounted on 25mm square pad of 2 oz. copper, t ≤10 sec. 2/11 PNP 400 IC Note: Unit NPN For PNP types voltage and current values are negative. Doc ID 14829 Rev 4 STD815CP40 2 Electrical characteristics Electrical characteristics Tcase = 25°C unless otherwise specified. Table 4. Symbol ICES V(BR)EBO Electrical characteristics Parameter Test conditions Collector cut-off current (VBE = 0) Emitter-base breakdown voltage (IC = 0) Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) For NPN: VCE = 700 V VCE = 700 V For PNP: VCE = 500 V VCE = 500 V Min. Max. Unit TC = 125°C 1 5 mA mA TC = 125°C 1 5 mA mA 18 10 V V IE = 10 mA For NPN: For PNP: 12 5 IC = 5 mA 400 Typ. V VCE(sat)(1) Collector-emitter saturation voltage IC = 0.5 A IC = 0.35 A IB = 0.1 A IB = 50 mA 0.5 1 V V VBE(sat)(1) Base-emitter saturation voltage IC = 0.5 A_ _ IB = 0.1 A 1 V DC current gain IC = 10 mA IC = 0.35A IC = 1 A VCE = 5 V VCE = 5 V VCE = 5 V hFE(1) tr ts tf Resistive load Rise time Storage time Fall time IC = 0.35 A IB1 = 70 mA_ tp ≥ 25 µs ts tf Inductive load Storage time Fall time IC = 0.5 A _ _ VBE(off) = -5 V Vclamp = 300 V VCC = 125 V IB2 = -70 mA 10 16 4 34 100 2.2 0.2 ns µs µs 450 80 ns ns IB1 = 0.1 A L = 10 mH 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤2 %. Note: For PNP types voltage and current values are negative Doc ID 14829 Rev 4 3/11 Electrical characteristics STD815CP40 2.1 Electrical characteristics (curves) Figure 2. DC current gain NPN (VCE = 5 V) Figure 3. DC current gain PNP (VCE = - 5 V) Figure 4. DC current gain NPN (VCE = 1 V) Figure 5. DC current gain PNP (VCE = - 1 V) Figure 6. Derating curve 4/11 Doc ID 14829 Rev 4 STD815CP40 Electrical characteristics Figure 7. Collector emitter saturation voltage Figure 8. NPN Figure 9. Base emitter saturation voltage NPN Figure 11. Resistive load fall time NPN Collector emitter saturation voltage PNP Figure 10. Base emitter saturation voltage PNP Figure 12. Resistive load fall time PNP Doc ID 14829 Rev 4 5/11 Electrical characteristics STD815CP40 Figure 13. Resistive load storage time NPN Figure 14. Resistive load storage time PNP Figure 15. Inductive load fall time NPN Figure 16. Inductive load fall time PNP Figure 17. Inductive load storage time NPN Figure 18. Inductive load storage time PNP 6/11 Doc ID 14829 Rev 4 STD815CP40 Figure 19. Reverse biased SOA (NPN) Electrical characteristics Figure 20. Reverse biased SOA (PNP) Doc ID 14829 Rev 4 7/11 Package mechanical data 3 STD815CP40 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. DIP-8 mechanical data mm. Dim. Min. Typ. A 8/11 Max. 4.80 A1 0.50 A2 3.10 3.50 A3 1.40 1.60 b 0.38 0.55 b1 0.38 0.51 b2 1.47 1.57 b3 0.89 1.09 c 0.21 0.35 c1 0.20 0.30 D 9.10 9.30 D1 0.13 E 7.62 8.25 E1 6.25 6.45 e 2.54 eA 7.62 eB 7.62 10.90 eC 0 1.52 L 2.92 3.81 Doc ID 14829 Rev 4 STD815CP40 Package mechanical data Figure 21. Drawing dimension DIP-8 8145726_A Doc ID 14829 Rev 4 9/11 Revision history 4 STD815CP40 Revision history Table 6. 10/11 Document revision history Date Revision Changes 20-Jun-2008 1 Initial release 26-May-2009 2 Updated mechanical data Table 5 on page 8 and Figure 21 on page 9. 29-Jun-2010 3 Modified: Table 2 and Table 3 on page 2, added Section 2.1: Electrical characteristics (curves). 05-Oct-2012 4 Table 2 and Table 3 on page 2 have been modified. Doc ID 14829 Rev 4 STD815CP40 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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