STD9NM40N

STD9NM40N, STP9NM40N N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages Datasheet — production data Features Order codes VDSS@TJMAX RDS(on)max. STD9NM40N STP9NM40N ■ 450 V ID < 0.79 Ω TAB 5.6 A TAB 100% avalanche tested 3 3 1 ■ Low input capacitance and gate charge ■ Low gate input resistance 1 DPAK 2 TO-220 Applications ■ Switching applications Description Figure 1. These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $4!" ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel TO-220 Tube STD9NM40N 9NM40N STP9NM40N December 2012 This is information on a product in full production. Doc ID 023762 Rev 2 1/18 www.st.com 18 Contents STD9NM40N, STP9NM40N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 Doc ID 023762 Rev 2 STD9NM40N, STP9NM40N 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 400 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 5.6 A ID Drain current (continuous) at TC = 100 °C 4.3 A Drain current (pulsed) 22.4 IDM (1) PTOT dv/dt (2) Tstg Tj Total dissipation at TC = 25 °C 60 W Peak diode recovery voltage slope 40 V/ns - 55 to 150 °C 150 °C Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 5.6 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max Table 4. TO-220 2.08 50 °C/W °C/W Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 140 mJ Doc ID 023762 Rev 2 3/18 Electrical characteristics 2 STD9NM40N, STP9NM40N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA IDSS Zero gate voltage VDS = 400 V drain current (VGS = 0) VDS = 400 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) Unit 400 V ± 100 nA 3 4 V 0.73 0.79 Ω Min. Typ. Max. Unit VDS = 50 V, f = 1 MHz, VGS = 0 - 365 30 2.3 - pF pF pF VDS = 0 to 50 V, VGS = 0 - 147.5 - pF VGS = ± 25 V RDS(on) Static drain-source onVGS = 10 V, ID = 2.5 A resistance Ciss Coss Crss Max. µA µA Gate threshold voltage VDS = VGS, ID = 250 µA Symbol Typ. 1 100 VGS(th) Table 6. Min. 2 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance Equivalent output Coss(eq)(1) capacitance time related RG Intrinsic gate resistance f = 1 MHz, ID=0 - 5.4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 320 V, ID = 5.6 A, VGS = 10 V (see Figure 17) - 14 3 7 - nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 Doc ID 023762 Rev 2 STD9NM40N, STP9NM40N Table 7. Symbol td(on) tr td(off) tf Table 8. Electrical characteristics Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 200 V, ID = 5.6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 7 4.4 25 8.8 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 5.6 22.4 A A ISD = 5.6 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.6 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21) - 187 1.3 14 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.6 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21) - 224 1.5 13 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 023762 Rev 2 5/18 Electrical characteristics STD9NM40N, STP9NM40N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK Figure 5. Thermal impedance for TO-220 Figure 7. Transfer characteristics AM16303v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 Op Lim era ite tion d by in th m is ax a r R e DS a (o n) is 10µs 1 100µs 1ms 10ms 0.1 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-220 AM15517v1 ID (A) (o n) 10µs DS Op Lim erat ite ion d b in y m this ax ar R e ai s 10 1 100µs 1ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 Figure 6. 10 1 100 10ms VDS(V) Output characteristics AM16304v1 ID (A) VGS=10V 10 AM16305v1 ID (A) VDS=20V 10 6V 8 8 6 6 4 4 5V 2 0 0 6/18 2 2 4 6 8 10 12 14 16 18 VDS(V) 0 0 Doc ID 023762 Rev 2 2 4 6 8 VGS(V) STD9NM40N, STP9NM40N Figure 8. Electrical characteristics Static drain-source on-resistance AM00891v1 RDS(on) (Ω) VGS=10V 0.077 Figure 9. Gate charge vs gate-source voltage AM16306v1 VGS (V) VDS VDS (V) VDD=320V ID=5.6A 12 0.076 300 10 250 8 200 6 150 0.072 4 100 0.071 2 50 0.075 0.074 0.073 0.070 0 2 1 3 4 5 ID(A) Figure 10. Capacitance variations 0 Qg(nC) 0 0 2 6 4 8 10 12 14 Figure 11. Output capacitance stored energy AM16308v1 C (pF) AM16309v1 Eoss (µJ) 1.6 1.4 1000 Ciss 1.2 1.0 100 0.8 Coss 10 0.4 Crss 1 0.1 0.6 1 10 100 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature AM07923v1 VGS(th) (norm) 0.2 ID = 250 µA ID = 2.5 A 0.90 1.3 0.80 0.9 25 50 75 100 AM07924v1 RDS(on) (norm) 2.1 1.7 0 100 150 200 250 300 350 VDS(V) Figure 13. Normalized on resistance vs temperature 1.00 0.70 -50 -25 50 TJ(°C) Doc ID 023762 Rev 2 0.5 -50 -25 0 25 50 75 100 TJ(°C) 7/18 Electrical characteristics STD9NM40N, STP9NM40N Figure 14. Normalized VDS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 Figure 15. Source-drain diode forward characteristics AM16310v1 VSD (V) TJ=-50°C 1.3 1.08 1.2 1.06 1.1 TJ=25°C 1.04 1.0 1.02 0.9 1.00 8/18 TJ=150°C 0.8 0.98 0.96 0.7 0.94 0.92 -50 -25 0.6 0 25 50 75 100 TJ(°C) 0.5 Doc ID 023762 Rev 2 0 1 2 3 4 5 ISD(A) STD9NM40N, STP9NM40N 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 20. Unclamped inductive waveform AM01471v1 Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 023762 Rev 2 10% AM01473v1 9/18 Package mechanical data 4 STD9NM40N, STP9NM40N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 Doc ID 023762 Rev 2 STD9NM40N, STP9NM40N Table 9. Package mechanical data DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 R V2 1 0.20 0° 8° Doc ID 023762 Rev 2 11/18 Package mechanical data STD9NM40N, STP9NM40N Figure 22. DPAK (TO-252) drawing 0068772_I Figure 23. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimensions are in millimeters 12/18 Doc ID 023762 Rev 2 AM08850v1 STD9NM40N, STP9NM40N Table 10. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 023762 Rev 2 13/18 Package mechanical data STD9NM40N, STP9NM40N Figure 24. TO-220 type A drawing 0015988_typeA_Rev_S 14/18 Doc ID 023762 Rev 2 STD9NM40N, STP9NM40N 5 Packaging mechanical data Packaging mechanical data Table 11. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 023762 Rev 2 18.4 22.4 15/18 Packaging mechanical data STD9NM40N, STP9NM40N Figure 25. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 26. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Tape slot In core for Full radius Tape start G measured At hub AM08851v1 16/18 Doc ID 023762 Rev 2 STD9NM40N, STP9NM40N 6 Revision history Revision history Table 12. Document revision history Date Revision Changes 08-Oct-2012 1 First release. 14-Dec-2012 2 – Minor text changes – Added: TO-220 package Doc ID 023762 Rev 2 17/18 STD9NM40N, STP9NM40N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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