STF20NK50Z

STF20NK50Z, STP20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet — production data Features Order codes VDSS RDS(on) max STF20NK50Z STP20NK50Z 500 V 500 V < 0.27 Ω < 0.27 Ω PTOT ID TAB 17 A 40 W 17 A 190 W 3 1 ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitance 3 2 1 2 TO-220 TO-220FP Applications ■ Figure 1. Switching applications Internal schematic diagram D(2 or TAB) Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package STF20NK50Z F20NK50Z TO-220FP STP20NK50Z P20NK50Z TO-220 Packaging Tube April 2012 This is information on a product in full production. Doc ID 023060 Rev 1 1/15 www.st.com 15 Contents STF20NK50Z, STP20NK50Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ............................................... 9 Doc ID 023060 Rev 1 STF20NK50Z, STP20NK50Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP VDS Drain-source voltage 500 VGS Gate-source voltage ± 30 ID ID Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C V V 17 17 10.71 (1) 10.71 (1) A A IDM (2) Drain current (pulsed) 68 68 A PTOT Total dissipation at TC = 25 °C 190 40 W Derating factor 1.52 0.32 W/°C 2500 V VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) ESD Gate-source human body model (R=1.5 kΩ, C=100 pF) dv/dt (3) Tstg Tj 6 kV 4.5 V/ns -55 to 150 °C 150 °C Peak diode recovery voltage slope Storage temperature Max operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 17 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 0.66 3.1 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 62.5 °C/W Table 4. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 17 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAR, VDD=50 V) 850 mJ Doc ID 023060 Rev 1 3/15 Electrical characteristics 2 STF20NK50Z, STP20NK50Z Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID =1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 500 V VDS = 500 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 8.5 A V(BR)DSS Table 6. Min. Typ. Max. Unit 500 V 1 50 µA µA ± 10 µA 3.75 4.5 V 0.23 0.27 Ω Min. Typ. Max. Unit - 2600 328 72 pF pF pF - 187 pF ns ns ns ns 3 Dynamic Symbol Parameter Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 Coss eq. (1) Equivalent output capacitance VDS =0, VDS = 0 to 640 V td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250 V, ID = 8.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) - 28 20 70 15 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 17 A, VGS = 10 V (see Figure 17) - 85 15.5 42 119 nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/15 Doc ID 023060 Rev 1 STF20NK50Z, STP20NK50Z Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max. Unit - 17 68 A A 1.6 V ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 17 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VR = 100 V (see Figure 18) - 355 3.90 22 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VR = 100 V, Tj = 150 °C (see Figure 18) - 440 5.72 26 ns µC A Test conditions Min. Typ. Igs=± 1mA (open drain) 30 trr Qrr IRRM trr Qrr IRRM 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Symbol BVGSO Gate-source Zener diode Parameter Gate-source breakdown voltage Max. - Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 023060 Rev 1 5/15 Electrical characteristics STF20NK50Z, STP20NK50Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/15 Doc ID 023060 Rev 1 STF20NK50Z, STP20NK50Z Figure 8. Electrical characteristics Normalized BVDSS vs temperature Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature Doc ID 023060 Rev 1 7/15 Electrical characteristics STF20NK50Z, STP20NK50Z Figure 14. Maximum avalanche energy vs temperature 8/15 Figure 15. Source-drain diode forward characteristic Doc ID 023060 Rev 1 STF20NK50Z, STP20NK50Z 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 20. Unclamped inductive waveform AM01471v1 Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 023060 Rev 1 10% AM01473v1 9/15 Package mechanical data 4 STF20NK50Z, STP20NK50Z Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/15 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 023060 Rev 1 STF20NK50Z, STP20NK50Z Package mechanical data Figure 22. TO-220FP drawing 7012510_Rev_K_B Doc ID 023060 Rev 1 11/15 Package mechanical data Table 10. STF20NK50Z, STP20NK50Z TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/15 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 023060 Rev 1 STF20NK50Z, STP20NK50Z Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 023060 Rev 1 13/15 Revision history 5 STF20NK50Z, STP20NK50Z Revision history Table 11. 14/15 Document revision history Date Revision 05-Apr-2012 1 Changes First release. Doc ID 023060 Rev 1 STF20NK50Z, STP20NK50Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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