STF3NK100Z

STD3NK100Z, STF3NK100Z Datasheet N-channel 1000 V, 5.4 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in DPAK and TO-220FP packages Features Order code STD3NK100Z STF3NK100Z • • • • • D(2, TAB) G(1) VDS RDS(on) max. ID 1000 V 6Ω 2.5 A Package DPAK TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications • S(3) AM01475V1 Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK100Z STF3NK100Z DS5252 - Rev 3 - July 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD3NK100Z, STF3NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value DPAK TO-220FP Unit VDS Drain-source voltage 1000 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) 2.5 (1) 2.5 1.57 1.57 (1) A A Drain current (pulsed) 10 10 A PTOT Total dissipation at TC = 25 °C 90 25 W ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope 3 kV 4.5 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25°C) 2.5 Operating junction temperature range -55 to 150 Storage temperature range kV °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter Value DPAK TO-220FP 5 Rthj-case Thermal resistance junction-case 1.39 Rthj-pcb (1) Thermal resistance junction-pcb 50 Rthj-amb Unit °C/W Thermal resistance junction-ambient 62.5 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR (1) Avalanche current, repetitive or not-repetitive 2.5 A EAS (2) Single pulse avalanche energy 110 mJ 1. Pulse width limited by Tjmax. 2. Starting Tj = 25°C, ID = IAR, VDD = 50 V. DS5252 - Rev 3 page 2/22 STD3NK100Z, STF3NK100Z Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. Max. 1000 Unit V VGS = 0 V, VDS = 1000 V 1 µA VGS = 0 V, VDS = 1000 V, TC = 125 °C (1) 50 µA ±10 µA 3.75 4.5 V 5.4 6 Ω Typ. Max. Unit - pF IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1.25 A 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Ciss Coss Parameter Test conditions Min. Input capacitance Output capacitance 601 VDS = 25 V, f = 1 MHz, VGS = 0 V - 53 Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 V to 800 V - 15 - pF RG Gate input resistance f = 1 MHz, open drain - 8.6 - Ω Qg Total gate charge VDD = 800 V, ID = 2.5 A, Qgs Gate-source charge VGS = 0 to 10 V - nC Gate-drain charge (see Figure 16. Test circuit for gate charge behavior) Qgd 12 18 - 3.6 9.2 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tr DS5252 - Rev 3 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Max. Unit - ns 15 VDD = 500 V, ID = 1.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) Typ. - 7.5 39 32 page 3/22 STD3NK100Z, STF3NK100Z Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 2.5 ISDM (1) Source-drain current (pulsed) - 10 VSD (2) Forward on voltage ISD = 2.5 A, VGS = 0 V - 1.6 trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs - 584 ns Qrr Reverse recovery charge - 2.3 μC IRRM Reverse recovery current VDD = 100 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 8 A trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs - 628 ns Qrr Reverse recovery charge - 2.5 μC IRRM Reverse recovery current VDD = 100 V, Tj = 150 °C (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 8.1 A A V 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ±1 mA, ID = 0 A Min. Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS5252 - Rev 3 page 4/22 STD3NK100Z, STF3NK100Z Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK Figure 3. Safe operating area for TO-220FP Figure 2. Thermal impedance for DPAK Figure 4. Thermal impedance for TO-220FP K GC20940_ZTH δ=0.5 0.1 δ=0.2 0.05 0.02 10 -1 0.01 Single pulse 10 -2 10 Figure 5. Output characterisics DS5252 - Rev 3 -3 10-4 10-3 10 -2 10 -1 10 0 tp(s) Figure 6. Transfer characteristics page 5/22 STD3NK100Z, STF3NK100Z Electrical characteristics (curves) Figure 7. Normalized V(BR)DSS vs temperature Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature DS5252 - Rev 3 page 6/22 STD3NK100Z, STF3NK100Z Electrical characteristics (curves) Figure 13. Source-drain diode forward characteristics DS5252 - Rev 3 Figure 14. Maximum avalanche energy vs temperature page 7/22 STD3NK100Z, STF3NK100Z Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS5252 - Rev 3 page 8/22 STD3NK100Z, STF3NK100Z Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS5252 - Rev 3 page 9/22 STD3NK100Z, STF3NK100Z DPAK (TO-252) type A2 package information 4.1 DPAK (TO-252) type A2 package information Figure 21. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev25 DS5252 - Rev 3 page 10/22 STD3NK100Z, STF3NK100Z DPAK (TO-252) type A2 package information Table 9. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS5252 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/22 STD3NK100Z, STF3NK100Z DPAK (TO-252) type C2 package information 4.2 DPAK (TO-252) type C2 package information Figure 22. DPAK (TO-252) type C2 package outline 0068772_C2_25 DS5252 - Rev 3 page 12/22 STD3NK100Z, STF3NK100Z DPAK (TO-252) type C2 package information Table 10. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS5252 - Rev 3 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/22 STD3NK100Z, STF3NK100Z DPAK (TO-252) type C2 package information Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS5252 - Rev 3 page 14/22 STD3NK100Z, STF3NK100Z DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 24. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS5252 - Rev 3 page 15/22 STD3NK100Z, STF3NK100Z DPAK (TO-252) packing information Figure 25. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS5252 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 16/22 STD3NK100Z, STF3NK100Z TO-220FP package information 4.4 TO-220FP package information Figure 26. TO-220FP package outline 7012510_Rev_12_B DS5252 - Rev 3 page 17/22 STD3NK100Z, STF3NK100Z TO-220FP package information Table 12. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS5252 - Rev 3 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 18/22 STD3NK100Z, STF3NK100Z Ordering information 5 Ordering information Table 13. Order codes DS5252 - Rev 3 Order code Marking Package Packing STD3NK100Z D3NK100Z DPAK Tape and reel STF3NK100Z F3NK100Z TO-220FP Tube page 19/22 STD3NK100Z, STF3NK100Z Revision history Table 14. Document revision history Date Version Changes 17-May-2007 1 First release 18-Oct-2007 2 Added DPAK The part number STP3NK100Z has been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. 02-Jul-2018 3 Updated title in cover page, Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Minor text changes. DS5252 - Rev 3 page 20/22 STD3NK100Z, STF3NK100Z Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 DS5252 - Rev 3 page 21/22 STD3NK100Z, STF3NK100Z IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS5252 - Rev 3 page 22/22