STFW42N60M2-EP

STF42N60M2-EP, STFW42N60M2-EP N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in TO-220FP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS(on) max ID 650 V 0.087 Ω 34 A STF42N60M2-EP STFW42N60M2-EP   3 1  2  TO-220FP • Extremely low gate charge • Excellent output capacitance (COSS) profile TO-3PF • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram ' Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description * 6 AM01476v1 These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. Table 1. Device summary Order codes Marking Package STF42N60M2-EP TO-220FP 42N60M2EP STFW42N60M2-EP January 2015 Packaging Tube TO-3PF DocID027376 Rev 1 1/16 www.st.com Contents STF42N60M2-EP, STFW42N60M2-EP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/16 .............................................. 9 4.1 TO-220FP, STF42N60M2-EP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-3PF, STFW42N60M2-EP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DocID027376 Rev 1 STF42N60M2-EP, STFW42N60M2-EP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP VGS Gate-source voltage ID(1) ID (1) IDM (1),(2) PTOT dv/dt (3) dv/dt(4) ± 25 V Drain current (continuous) at TC = 25 °C 34 A Drain current (continuous) at TC = 100 °C 22 A Drain current (pulsed) 136 A Total dissipation at TC = 25 °C 40 63 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Tstg Storage temperature Tj TO-3PF 2500 3500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area. 3. ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V. 4. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter Unit TO-220FP TO-3PF Rthj-case Thermal resistance junction-case max 3.13 2.00 °C/W Rthj-amb 62.5 50 °C/W Thermal resistance junction-ambient max Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 800 mJ DocID027376 Rev 1 3/16 16 Electrical characteristics 2 STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current VGS = 0 V, ID = 1 mA Min. Typ. Max. Unit 600 V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA VDS = 0 V, VGS = ± 25 V ±10 µA 3 4 V 0.076 0.087 Ω Min. Typ. Max. Unit - 2370 - pF - 112 - pF - 2.5 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 17 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 454 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 4.5 - Ω Qg Total gate charge - 55 - nC Qgs Gate-source charge - 8.5 - nC Qgd Gate-drain charge VDD = 480 V, ID = 34 A, VGS = 10 V (see Figure 18) - 25 - nC VGS = 0, VDS = 100 V, f = 1 MHz 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching Energy Symbol R(off) 4/16 Parameter Turn-off energy (from 90% VGS to 0% ID) Test conditions Min. Typ. Max. Unit VDD = 400 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V - 13 - µJ VDD = 400 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V - 14.5 - µJ DocID027376 Rev 1 STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics Table 8. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 17 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17 and Figure 22) Rise time td(off) tf Turn-off-delay time Fall time Min. Typ. Max. Unit - 16.5 - ns - 9.5 - ns - 96.5 - ns - 8 - ns Table 9. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 34 A ISDM (1) Source-drain current (pulsed) - 136 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 34 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 34 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) ISD = 34 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 438 ns - 9 µC - 41.5 A - 538 ns - 12 µC - 44.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027376 Rev 1 5/16 16 Electrical characteristics 2.1 STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP ,' $ *,3*$/6 Figure 3. Thermal impedance for TO-220FP *& . į    LV D UH RQ D   LV 6 WK 5' LQ D[ LW RQ P D \ HU GE 2S LWH LO P     —V    —V PV PV  =WK . 5 WK-F į W SϨ 6LQJOHSXOVH     7M ƒ& 7F ƒ& 6LQJOHSXOVH 9'69   Figure 4. Safe operating area for TO-3PF ,' $ *,3*$/6 WS         Ϩ  WSV Figure 5. Thermal impedance for TO-3PF =WK72SIXP6 . į    LV D UH RQ D   LV 6 WK 5' LQ D[ LW RQ P D \ HU GE 2S LWH LO P     —V —V  PV PV   =WK . 5 WKMF į W SϨ     7M ƒ& 7F ƒ& 6LQJOHSXOVH 9'69   Figure 6. Output characteristics ,'$ 6LQJOHSXOVH WS        *,3*$/6    Ϩ  WSV Figure 7. Transfer characteristics ,' $ 9*6 9   *,3*$/6   9*6 9     9'6 9 9*6 9   6/16  9*6 9      9'69   DocID027376 Rev 1     9*69 STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics Figure 8. Gate charge vs gate-source voltage 9*6 9  9  *,3*$/6 '6 9  9'6 Figure 9. Static drain-source on-resistance 5'6RQ ȍ *,3*$/6      9'' 9 ,' $   9*6 9               4JQ&   Figure 10. Turn-off switching loss vs drain current (RII —- *,3*$/6         ,' $ Figure 11. Capacitance variations & SI            *,3*$/6 &LVV &RVV I 0K] &UVV         ,'$ Figure 12. Output capacitance stored energy ( —-     9'69 Figure 13. Normalized gate threshold voltage vs temperature 9*6WK QRUP *,3*$/6  *,3*$/6      ,' —$             9'69   DocID027376 Rev 1     7-ƒ& 7/16 16 Electrical characteristics STF42N60M2-EP, STFW42N60M2-EP Figure 14. Normalized on-resistance vs temperature 5'6RQ QRUP *,3*$/6 Figure 15. Normalized V(BR)DSS vs temperature 9%5'66 QRUP              7- ƒ&   Figure 16. Source-drain diode forward vs temperature 96' 9 *,3*$/6  7- ƒ&   7- ƒ&  7- ƒ&    8/16    ,' P$  9*6 9   *,3*$/6       ,6'$ DocID027376 Rev 1     7- ƒ& STF42N60M2-EP, STFW42N60M2-EP 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID027376 Rev 1 10% AM01473v1 9/16 16 Package mechanical data 4 STF42N60M2-EP, STFW42N60M2-EP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID027376 Rev 1 STF42N60M2-EP, STFW42N60M2-EP 4.1 Package mechanical data TO-220FP, STF42N60M2-EP Figure 23. TO-220FP drawing 7012510_Rev_K_B DocID027376 Rev 1 11/16 16 Package mechanical data STF42N60M2-EP, STFW42N60M2-EP Table 10. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/16 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID027376 Rev 1 STF42N60M2-EP, STFW42N60M2-EP 4.2 Package mechanical data TO-3PF, STFW42N60M2-EP Figure 24. TO-3PF drawing 7627132_D DocID027376 Rev 1 13/16 16 Package mechanical data STF42N60M2-EP, STFW42N60M2-EP Table 11. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 14/16 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID027376 Rev 1 10.20 STF42N60M2-EP, STFW42N60M2-EP 5 Revision history Revision history Table 12. Document revision history Date Revision 21-Jan-2015 1 Changes First release. DocID027376 Rev 1 15/16 16 STF42N60M2-EP, STFW42N60M2-EP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID027376 Rev 1