STP42N60M2-EP

STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID 650 V 0.087 Ω 34 A STB42N60M2-EP 2 STP42N60M2-EP 3 D²PAK 1 TO-220 1 2 3 STW42N60M2-EP TAB 1 TO-247 2 • • • • • 3 Figure 1: Internal schematic diagram D(2, TAB) Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications • • Switching applications Tailored for very high frequency converters (f > 150 kHz) Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. G(1) S(3) AM01476v1 Table 1: Device summary Order code Marking STB42N60M2-EP STP42N60M2-EP 42N60M2EP STW42N60M2-EP January 2015 Package Packaging D²PAK Tape and reel TO-220 TO-247 DocID027327 Rev 1 This is information on a product in full production. Tube 1/20 www.st.com Contents STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 D²PAK package information ............................................................ 10 4.2 TO-220 type A package information................................................ 13 4.3 TO-247 package information ........................................................... 15 5 Packaging mechanical data .......................................................... 17 6 Revision history ............................................................................ 19 2/20 DocID027327 Rev 1 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 34 A ID Drain current (continuous) at TC = 100 °C 22 A (1) IDM Drain current (pulsed) 136 A PTOT Total dissipation at TC = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C 150 °C Tstg Storage temperature Tj Max. operating junction temperature Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V Table 3: Thermal data Value Symbol Parameter D²PAK Rthj-case Rthj-pcb (1) Rthj-amb Thermal resistance junction-case max Thermal resistance junction-pcb max TO-220 TO247 0.50 °C/W 30 Thermal resistance junction-ambient max Unit °C/W 62.5 50 °C/W Notes: (1) When mounted on FR-4 board of inch², 2oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 800 mJ DocID027327 Rev 1 3/20 Electrical characteristics 2 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage Drain current IGSS VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 17 A 0.076 0.087 Ω Min. Typ. Max. Unit - 2370 - pF - 112 - pF - 2.5 - pF 2 Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 454 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.5 - Ω Qg Total gate charge - 55 - nC - 8.5 - nC - 25 - nC Coss eq. (1) Qgs Gate-source charge Qgd Gate-drain charge VDD = 480 V, ID = 34 A, VGS = 10 V (see Figure 18: "Gate charge test circuit") Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching energy Symbol E(off) 4/20 Parameter Test conditions Turn-off energy (from 90% VGS to 0% ID) Min. Typ. Max. Unit VDD = 400 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V - 13 - µJ VDD = 400 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V - 14.5 - µJ DocID027327 Rev 1 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Electrical characteristics Table 8: Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 17 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17: "Switching times test circuit for resistive load" and Figure 22: "Switching time waveform" ) Rise time td(off) tf Turn-off-delay time Fall time Min. Typ. Max. Unit - 16.5 - ns - 9.5 - ns - 96.5 - ns - 8 - ns Min. Typ. Max. Unit Table 9: Source drain diode Symbol ISD Parameter Test conditions Source-drain current - 34 A (1) Source-drain current (pulsed) - 136 A (2) Forward on voltage VGS = 0 V, ISD = 34 A - 1.6 V trr Reverse recovery time - 438 ns Qrr Reverse recovery charge - 9 µC IRRM Reverse recovery current ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 22: "Switching time waveform") - 41.5 A - 538 ns - 12 µC - 44.5 A ISDM VSD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 22: "Switching time waveform") Notes: (1) (2) Pulse width is limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027327 Rev 1 5/20 Electrical characteristics 2.2 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Electrical characteristics (curves) Figure 2: Safe operating area for D²PAK and TO-220 ID (A) Figure 3: Thermal impedance for D²PAK and TO-220 GC20540 K GIPG070120151456ALS δ=0.5 100 0.1 DS (o n) O p lim era ite tion d by in t m his ax a R rea 0.2 is 10 10µs 100µs 1ms 0.05 0.02 Zth= K*Rthj-c δ= tp/Ƭ 10ms 1 0.1 10-1 0.01 Single pulse Tj=150°C TC=25°C Single pulse 0.1 1 10 100 VDS(V) Figure 4: Safe operating area for TO-247 ID (A) 10-2 10-5 -4 tp -3 10 10 -2 10 Ƭ Figure 5: Thermal impedance for TO-247 GC18460 K GIPG070120151628ALS tP(s) 10-1 δ=0.5 0.2 100 10-1 n) 0.05 DS (o O p lim era ite tion d by in t m his ax a R rea 0.1 10µs 1ms 0.01 10-2 10ms 1 0.1 0.02 100µs is 10 Tj=150°C TC=25°C Single pulse 0.1 1 10 100 VDS(V) Figure 6: Output characteristics ID (A) GIPG080120150837ALS VGS = 7, 8, 9, 10 V 80 Zth= K*Rthj-c δ= tp/Ƭ Single pulse tp 10-3 10-5 -4 10 -3 10 -2 10 Ƭ 10-1 tP(s) Figure 7: Transfer characteristics ID (A) GIPG080120150946ALS 80 VGS = 6 V 60 60 40 VGS = 5 V 20 VDS = 18 V 40 20 VGS = 4 V 0 0 6/20 4 8 12 16 VDS(V) DocID027327 Rev 1 0 0 2 4 6 8 VGS (V) STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Electrical characteristics Figure 8: Gate charge vs gate-source voltage VGS (V) 12 GIPG080120151019ALS VDS Figure 9: Static drain-source on-resistance VDS (V) 500 RDS(on) (Ω) GIPG080120151046ALS 0.080 10 400 8 0.078 300 VDD = 480 V ID = 34 A 6 200 VGS = 10 V 0.076 4 100 2 0 0 10 20 30 40 50 0 60 Qg(nC) Figure 10: Capacitance variations C (pF) 0.074 0.072 0 5 10 15 20 25 30 35 ID(A) Figure 11: Output capacitance stored energy EOSS (µJ) GIPG080120151120ALS GIPG080120151125ALS 18 10000 16 14 CISS 1000 12 10 f = 1 Mhz 100 8 COSS 6 10 4 CRSS 2 1 0.1 1 10 100 Figure 12: Turn-off switching loss vs drain current EOFF (µJ) 0 VDS(V) 0 200 400 VDS(V) 600 Figure 13: Normalized gate threshold voltage vs temperature GIPG080120151154ALS VGS(th) (norm) GIPG080120151205ALS 1.1 18 1 16 0.9 ID = 250 µA 14 0.8 12 0.7 10 0 1 2 3 4 5 6 7 ID(A) DocID027327 Rev 1 0.6 -75 -25 25 75 125 TJ(°C) 7/20 Electrical characteristics STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Figure 14: Normalized on-resistance vs temperature RDS(on) (norm) Figure 15: Source-drain diode forward characteristics VSD (V) GIPG080120151407ALS GIPG080120151416ALS 1.1 2.2 TJ = -50 °C 1.0 1.8 TJ = 25 °C 0.9 1.4 VGS = 10 V 0.8 TJ = 150 °C 1 0.7 0.6 0.2 -75 0.6 -25 25 75 125 0.5 0 TJ(°C) 4 8 12 16 20 24 28 32 ISD(A) Figure 16: Normalized V(BR)DSS vs temperature V(BR)DSS (V) GIPG080120151513ALS 1.08 1.04 1.00 ID = 1 mA 0.96 0.92 0.88 -75 8/20 -25 25 75 DocID027327 Rev 1 125 Tj(°C) STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 3 Test circuits Test circuits Figure 17: Switching times test circuit for resistive load Figure 18: Gate charge test circuit VDD 47 k Ω 12 V 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. 2.7 k Ω 2200 μ F VG 47 k Ω PW 1 kΩ AM01469v 1 Figure 19: Test circuit for inductive load switching and diode recovery times Figure 20: Unclamped inductive load test circuit Figure 21: Unclamped inductive waveform Figure 22: Switching time waveform t on V(BR)DSS t d(on) VD toff tr t d(off) tf 90% 90% I DM 10% ID VDD 10% 0 VDD VGS AM01472v 1 DocID027327 Rev 1 0 10% VDS 90% AM01473v 1 9/20 Package mechanical data 4 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 D²PAK package information Figure 23: D²PAK (TO-263) drawing 0079457_V 10/20 DocID027327 Rev 1 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Package mechanical data Table 10: D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 R V2 1.75 0.4 0° DocID027327 Rev 1 8° 11/20 Package mechanical data STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Figure 24: D²PAK footprint All the dimensions are in millimeters. 12/20 DocID027327 Rev 1 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 4.2 Package mechanical data TO-220 type A package information Figure 25: TO-220 type A package outline DocID027327 Rev 1 13/20 Package mechanical data STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Table 11: TO-220 type A mechanical data mm Dim. Min. Max. 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/20 Typ. A 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027327 Rev 1 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 4.3 Package mechanical data TO-247 package information Figure 26: TO-247 drawing 0075325_H DocID027327 Rev 1 15/20 Package mechanical data STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Table 12: TO-247 mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 L1 3.70 L2 16/20 Typ. 5.45 5.60 14.80 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 DocID027327 Rev 1 5.50 5.70 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 5 Packaging mechanical data Packaging mechanical data Figure 27: Tape DocID027327 Rev 1 17/20 Packaging mechanical data STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Figure 28: Reel T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 13: D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/20 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027327 Rev 1 Min. Max. 330 13.2 26.4 30.4 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP 6 Revision history Revision history Table 14: Document revision history Date Revision 20-Jan-2015 1 DocID027327 Rev 1 Changes First release. 19/20 STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 20/20 DocID027327 Rev 1