STP27N60M2-EP

STP27N60M2-EP, STW27N60M2-EP N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code 1 2 3 TO-220 3 2 1 TO-247      V DS RDS(on) max ID STP27N60M2-EP 600 V 0.163 Ω 20 A STW27N60M2-EP 600 V 0.163 Ω 20 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram   Switching applications Tailored for very high frequency converters (f > 150 kHz) Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. Table 1: Device summary Order code STP27N60M2-EP STW27N60M2-EP December 2015 Marking 27N60M2EP DocID028723 Rev 1 This is information on a product in full production. Package TO-220 TO-247 Packaging Tube 1/16 www.st.com Contents STP27N60M2-EP, STW27N60M2-EP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/16 4.1 TO-220 type A package information................................................ 11 4.2 TO-247 package information ........................................................... 13 Revision history ............................................................................ 15 DocID028723 Rev 1 STP27N60M2-EP, STW27N60M2-EP 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 13 A IDM(1) Drain current (pulsed) 80 A PTOT Total dissipation at TC = 25 °C 170 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Tstg Storage temperature Tj Operating junction temperature Notes: (1)Pulse (2)I SD (3)V width limited by safe operating area. ≤ 20 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. DS ≤ 480 V Table 3: Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max TO-247 0.74 62.5 °C/W 50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 3.6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 260 mJ DocID028723 Rev 1 3/16 Electrical characteristics 2 STP27N60M2-EP, STW27N60M2-EP Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 10 A 0.150 0.163 Ω Min. Typ. Max. Unit - 1320 - pF - 70 - pF - 1 - pF IDSS Zero gate voltage drain current IGSS 2 Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 146 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4 - Ω Qg Total gate charge - 33 - nC Qgs Gate-source charge - 5.2 - nC Qgd Gate-drain charge VDD = 480 V, ID = 20 A, VGS = 10 V (see Figure 17: "Test circuit for gate charge behavior") - 16 - nC VDS= 100 V, f = 1 MHz, VGS = 0 V Notes: (1)C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Max. Unit VDD = 300 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform" ) - 13.4 - ns - 8.1 - ns - 55.6 - ns - 6.3 - ns DocID028723 Rev 1 STP27N60M2-EP, STW27N60M2-EP Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 20 A ISDM(1) Source-drain current (pulsed) - 80 A VSD (2) Forward on voltage - 1.6 V VGS = 0 V, ISD = 20 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 21: "Switching time waveform") ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 21: "Switching time waveform") - 271 ns - 3.44 µC - 25.4 A - 352 ns - 4.82 µC - 27.4 A Notes: (1)Pulse width is limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID028723 Rev 1 5/16 Electrical characteristics 2.1 STP27N60M2-EP, STW27N60M2-EP Electrical characteristics (curves) Figure 2: Safe operating area for TO-220 Figure 3: Thermal impedance for TO-220 K δ=0.5 0.2 0.1 10 -1 0.05 0.02 Zth= K*Rthj-c δ= tp/Ƭ 0.01 Single pulse 10 -2 10 -5 6/16 10 -4 10 tp -3 10 -2 Ƭ 10 -1 t P (s) Figure 4: Safe operating area for TO-247 Figure 5: Thermal impedance for TO-247 Figure 6: Output characteristics Figure 7: Transfer characteristics DocID028723 Rev 1 STP27N60M2-EP, STW27N60M2-EP Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance Figure 10: Capacitance variations Figure 11: Output capacitance stored energy Figure 12: Normalized V(BR)DSS vs temperature Figure 13: Normalized gate threshold voltage vs temperature DocID028723 Rev 1 7/16 Electrical characteristics STP27N60M2-EP, STW27N60M2-EP Figure 14: Normalized on-resistance vs temperature 8/16 DocID028723 Rev 1 Figure 15: Source-drain diode forward characteristics STP27N60M2-EP, STW27N60M2-EP 3 Test circuits Test circuits Figure 16: Test circuit for resistive load switching times Figure 17: Test circuit for gate charge behavior Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 21: Switching time waveform Figure 20: Unclamped inductive waveform DocID028723 Rev 1 9/16 Package information 4 STP27N60M2-EP, STW27N60M2-EP Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID028723 Rev 1 STP27N60M2-EP, STW27N60M2-EP 4.1 Package information TO-220 type A package information Figure 22: TO-220 type A package outline DocID028723 Rev 1 11/16 Package information STP27N60M2-EP, STW27N60M2-EP Table 9: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/16 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID028723 Rev 1 STP27N60M2-EP, STW27N60M2-EP 4.2 Package information TO-247 package information Figure 23: TO-247 package outline DocID028723 Rev 1 13/16 Package information STP27N60M2-EP, STW27N60M2-EP Table 10: TO-247 package mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 14/16 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID028723 Rev 1 3.65 5.50 5.50 5.70 STP27N60M2-EP, STW27N60M2-EP 5 Revision history Revision history Table 11: Document revision history Date Revision 15-Dec-2015 1 DocID028723 Rev 1 Changes First release. 15/16 STP27N60M2-EP, STW27N60M2-EP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID028723 Rev 1