STGP3NB60HD - STGP3NB60HDFP
STGB3NB60HD
N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK
PowerMESH™ IGBT
TYPE
VCES
VCE(sat) (Max)
@25°C
IC(#)
@100°C
STGB3NB60HD
STGP3NB60HD
STGP3NB60HDFP
600 V
600 V
600 V
< 2.8 V
< 2.8 V
< 2.8 V
6A
6A
6A
■
■
■
■
■
■
3
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW GATE CHARGE
HIGH FREQUENCY OPERATION
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
1
3
2
1
TO-220
2
TO-220FP
3
1
D2PAK
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INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
)
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APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
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ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGB3NB60HDT4
GB3NB60HD
D2PAK
TAPE & REEL
STGP3NB60HD
GP3NB60HD
TO-220
TUBE
STGP3NB60HDFP
GP3NB60HDFP
TO-220FP
TUBE
September 2003
1/12
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STGP3NB60HD
STGB3NB60HD
Unit
STGP3NB60HDFP
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC = 25°C (#)
10
A
IC
Collector Current (continuous) at TC = 100°C (#)
6
A
Collector Current (pulsed)
24
A
ICM ()
PTOT
Tstg
Tj
Total Dissipation at TC = 25°C
50
25
W
Derating Factor
0.4
0.2
W/°C
Storage Temperature
–55 to 150
Operating Junction Temperature
°C
() Pulse width limited by safe operating area
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THERMAL DATA
TO-220/D2PAK
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
)
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TO-220FP
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2.5
5
62.5
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°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
VBR(CES)
ICES
IGES
Symbol
Min.
Typ.
Max.
IC = 250 µA, VGE = 0
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
50
µA
VCE = Max Rating, TC = 125 °C
100
µA
VGE = ±20V , VCE = 0
±100
nA
Max.
Unit
5
V
2.8
V
uc
od
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Gate-Emitter Leakage
Current (VCE = 0)
600
Unit
Collector-Emitter Breakdown
Voltage
Parameter
VGE(th)
Gate Threshold Voltage
VCE(sat)
Collector-Emitter Saturation
Voltage
(#) Calculated according to the iterative formula:
T JMAX – T C
I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, I C)
2/12
(t s)
Test Conditions
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ON (1)
Parameter
Test Conditions
VCE = VGE, IC = 250µA
Min.
Typ.
3
VGE = 15V, IC = 3 A
2.4
VGE = 15V, IC = 3 A, Tj =125°C
1.9
V
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Test Conditions
Min.
VCE = 25 V , IC =3 A
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC = 3 A,
VGE = 15V
ICL
Latching Current
Vclamp = 480 V , Tj = 125°C
RG = 10 Ω
Typ.
Max.
Unit
2.4
S
235
33
6.6
pF
pF
pF
21
6
7.6
27
12
nC
nC
nC
A
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon
Parameter
Test Conditions
Min.
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 3 A
RG = 10Ω , VGE = 15 V
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 3 A RG=10Ω
VGE = 15 V,Tj = 125°C
tc
Parameter
Cross-over Time
Test Conditions
77
ns
33
µJ
110
µJ
180
ns
82
ns
58
ns
110
ns
Turn-off Switching Loss
88
µJ
Total Switching Loss
165
µJ
so
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
td(off)
Delay Time
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Fall Time
Ets
Unit
ns
tr(Voff)
Eoff(**)
Max.
ns
Fall Time
tf
Typ.
53
Delay Time
tc
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36
Off Voltage Rise Time
Ets
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A/µs
µJ
ns
td(off)
Eoff(**)
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Vcc = 480 V, IC =3 A,
RGE = 10 Ω , VGE = 15 V
)
s
t(
ns
ns
400
77
Min.
Unit
76
tr(Voff)
tf
Max.
5
11
SWITCHING OFF
Symbol
Typ.
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(t s)
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Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
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Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
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COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Ifm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
If = 3 A
If = 3 A, Tj = 125 °C
1.6
1.4
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A ,VR = 35 V,
Tj =125°C, di/dt = 100 A/µs
45
70
2.7
If
trr
Qrr
Irrm
Max.
Unit
3
24
A
A
2.0
V
V
ns
nC
A
3/12
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
Thermal Impedance for TO-220/D2PAK
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
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Transconductance
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4/12
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Collector-Emitter On Voltage vs Temperature
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
Collector-Emitter On Voltage vs Collettor Current
Normalized Breakdown Voltage vs Temperature
Gate Threshold vs Temperature
Capacitance Variations
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Gate Charge vs Gate-Emitter Voltage
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Total Switching Losses vs Gate Resistance
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STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
Total Switching Losses vs Temperature
Emitter-collector Diode Characteristics
Total Switching Losses vs Collector Current
Switching Off Safe Operating Area
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6/12
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STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
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7/12
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
TO-220 MECHANICAL DATA
mm.
DIM.
MIN.
TYP
4.60
0.173
TYP.
MAX.
4.40
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
0.181
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
øP
3.75
3.85
0.147
Q
2.65
2.95
0.104
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8/12
MIN.
A
)
s
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inch
MAX.
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0.151
0.116
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
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0.630
)
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L3
28.6
30.6
1.126
L4
9.8
10.6
.0385
L5
2.9
3.6
0.114
L6
15.9
16.4
0.626
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
P
e
let
0.417
0.141
D
E
0.645
L3
L6
F2
H
G
G1
F
L7
F1
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1.204
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inch
TYP
L2
L5
1 2 3
L4
9/12
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10.4
E1
0.393
8.5
4.88
5.28
L
15
15.85
L2
1.27
1.4
L3
1.4
1.75
M
2.4
)
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0º
0.192
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0.590
so
b
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3.2
0.4
V2
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0.334
G
R
c
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0.315
10
)
s
t(
0.368
0.208
0.625
0.050
0.055
0.055
0.068
0.094
0.126
0.015
4º
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10/12
1
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
c
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REEL MECHANICAL DATA
DIM.
mm
ro
MIN.
P
e
let
A
B
so
)
s
(
ct
TAPE MECHANICAL DATA
DIM.
mm
inch
u
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MIN.
MAX.
A0
10.5
B0
15.7
D
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e
D1
1.5
1.59
MIN.
10.7
0.413 0.421
15.9
0.618 0.626
1.6
0.059 0.063
1.61
0.062 0.063
1.65
1.85
0.065 0.073
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
O
F
330
1.5
C
12.8
D
20.2
G
24.4
N
100
T
inch
MIN.
MAX.
12.992
0.059
13.2
0.504 0.520
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
bs
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MAX.
0.075 0.082
* on sales type
11/12
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
12/12
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