STGW25H120DF2

STGW25H120DF2, STGWA25H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features 1 TO-247 2 3 1 2 3 TO-247 long leads • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • • • Safe paralleling Low thermal resistance Very fast recovery antiparallel diode Applications • • • • • Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGW25H120DF2 STGWA25H120DF2 Product summary Order code STGW25H120DF2 Marking G25H120DF2 Package TO-247 Packing Tube Order code STGWA25H120DF2 Marking G25H120DF2 Package TO-247 long leads Packing Tube DS9297 - Rev 5 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGW25H120DF2, STGWA25H120DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0 V) Value Unit 1200 V Continuous collector current at TC = 25 °C 50 Continuous collector current at TC = 100 °C 25 Pulsed collector current 100 Gate-emitter voltage ±20 Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) ±30 Continuous forward current at TC = 25 °C 50 Continuous forward current at TC = 100 °C 25 IFP(1) Pulsed forward current 100 A PTOT Total power dissipation at TC = 25 °C 375 W TJ Operating junction temperature range - 55 to 175 °C Storage temperature range - 55 to 150 °C Value Unit IC ICP(1) VGE IF TSTG A A V A 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol RthJC RthJA DS9297 - Rev 5 Parameter Thermal resistance, junction-to-case IGBT 0.4 Thermal resistance, junction-to-case diode 1.47 Thermal resistance, junction-to-ambient 50 °C/W °C/W page 2/17 STGW25H120DF2, STGWA25H120DF2 Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VF Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 1200 2.1 VGE = 15 V, IC = 25 A, TJ = 125 °C 2.4 VGE = 15 V, IC = 25 A, TJ = 175 °C 2.5 IF = 25 A 3.8 IF = 25 A, TJ = 125 °C 3.05 IF = 25 A, TJ = 175 °C 2.8 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 25 A VGE(th) Max. 6 2.6 V 4.9 V 7 V VGE = 0 V, VCE = 1200 V 25 µA VCE = 0 V, VGE = ±20 V 250 nA Table 4. Dynamic characteristics Symbol DS9297 - Rev 5 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 960 V, IC = 25 A, VGE = 0 to 15 V (see Figure 28. Gate charge test circuit) Min. Typ. Max. Unit - 2010 - pF - 146 - pF - 49 - pF - 100 - nC - 11 - nC - 52 - nC page 3/17 STGW25H120DF2, STGWA25H120DF2 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Unit Turn-on delay time 29 - ns Current rise time 12 - ns 1774 - A/μs 130 - ns 106 - ns 0.6 - mJ Turn-on current slope Turn-off delay time Current fall time Test conditions Min. VCE = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V (see Figure 27. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff(2) Turn-off switching energy 0.7 - mJ Total switching energy 1.3 - mJ Turn-on delay time 27.5 - ns Current rise time 13.5 - ns 1522 - A/μs 139 - ns 200 - ns 1.05 - mJ Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time VCE = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy 1.65 - mJ Ets Total switching energy 2.7 - mJ tsc Short-circuit withstand time - μs VCE = 600 V, VGE = 15 V, TJ = 150 °C, 5 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS9297 - Rev 5 Parameter Test conditions Min. Typ. Max. Unit - 303 - ns trr Reverse recovery time Qrr Reverse recovery charge IF = 25 A, VR = 600 V, - 0.93 - μC Irrm Reverse recovery current di/dt = 500 A/μs, VGE = 15 V - 15.3 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 27. Test circuit for inductive load switching) - 400 - A/μs Err Reverse recovery energy - 0.52 - mJ trr Reverse recovery time - 508 - ns - 2.71 - μC - 23 A - 680 A/μs - 1.56 mJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 25 A, VR = 600 V, di/dt = 500 A/μs, VGE = 15 V, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) page 4/17 STGW25H120DF2, STGWA25H120DF2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature Ptot (W) GIPG240420141525FSR IC (A) 350 VGE ≥ 15V, T J ≤ 175 °C 50 GIPG240420141537FSR VGE ≥ 15V, T J ≤ 175 °C 300 40 250 30 200 150 20 100 10 50 0 0 50 25 75 100 125 150 175 TC(°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) GIPG240420141543FSR 11V VGE=15V 13V 80 0 0 50 25 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ = 175 °C) GIPG260420141136FSR IC (A) 13V 11V 80 VGE=15V 9V 60 60 9V 40 40 20 20 0 0 7V 2 1 4 3 5 VCE(V) Figure 5. VCE(sat) vs junction temperature GIPG260420141146FSR VCE(sat) (V) 3.4 IC= 50A VGE= 15V 0 0 1 2 4 3 5 VCE(V) Figure 6. VCE(sat) vs collector current VCE(sat) (V) 3.6 GIPG260420141152FSR TJ= 25°C VGE= 15V 3.2 3.0 7V TJ= 175°C 2.8 2.6 IC= 25A TJ= -40°C 2.4 2.2 IC= 12.5A 1.8 1.4 -50 DS9297 - Rev 5 2.0 1.6 0 50 100 150 TJ(°C) 1.2 0 20 40 60 80 IC(A) page 5/17 STGW25H120DF2, STGWA25H120DF2 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency GIPG260420141200FSR IC (A) Figure 8. Safe operating area GIPG260420141214FSR IC (A) 80 Tc=80°C 70 100 1 µs 60 Tc=100 °C 50 10 µs 10 40 100 µs 30 20 rectangular current shape, (duty cycle=0.5, VCC = 600V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 10 0 1 f (kHz) 10 Figure 9. Transfer characteristics IC (A) GIPG260420141221FSR VCE=10V 80 TJ=25°C 0.1 1 ms Single pulse Tc= 25°C, T J ≤ 175°C VGE= 15V 1 1 100 10 1000 VCE(V) Figure 10. Diode VF vs forward current GIPG260420141452FSR VGE(th) (norm) 1.1 IC= 1mA VCE= VGE 1.0 60 0.9 TJ=175°C 40 0.8 20 0 0.7 5 6 7 8 9 10 11 VGE(V) 0.6 -50 Figure 11. Normalized V(BR)CES vs junction temperature GIPG260420141502FSR V(BR)CES (norm) 1.10 0 50 100 150 TJ(°C) Figure 12. Capacitance variations C (pF) GIPG260420141508FSR Cies IC= 2mA 1000 1.05 100 1.00 Coes 0.95 Cres 10 0.90 0.85 -50 DS9297 - Rev 5 f = 1 MHz, VGE = 0 0 50 100 150 TJ(°C) 1 0.1 1 10 100 VCE(V) page 6/17 STGW25H120DF2, STGWA25H120DF2 Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage VGE (V) 16 GIPG270420141015FSR Figure 14. Switching energy vs collector current E (µJ) GIPG270420141036FSR VCC = 600V, V GE = 15V, RG = 10Ω, TJ = 175°C 3000 IC= 25A IGE= 1mA VCC= 960V 2500 12 EOFF 2000 EON 1500 8 1000 4 0 0 500 20 40 60 80 100 Qg(nC) Figure 15. Switching energy vs gate resistance E (µJ) GIPG270420141049FSR VCC = 600 V, V GE = 15 V, IC = 25 A, TJ = 175 °C 0 0 10 20 30 40 50 IC(A) Figure 16. Switching energy vs junction temperature E (µJ) GIPG270420141146FSR VCC= 600V, V GE= 15V, RG= 10Ω, IC= 25A 1700 2000 1500 1500 EOFF EOFF 1300 EON EON 1100 1000 900 500 0 0 700 10 20 30 40 RG(Ω) Figure 17. Switching energy vs collector-emitter voltage E (µJ) 2500 GIPG270420141152FSR TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 25A 500 0 50 100 150 Figure 18. Switching times vs collector current t (ns) GIPG270420141157FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 600V tf 2200 1900 100 EOFF TJ(°C) 1600 tdoff tdon 1300 EON 1000 10 tr 700 400 100 250 DS9297 - Rev 5 450 650 850 VCE(V) 1 0 10 20 30 40 50 IC(A) page 7/17 STGW25H120DF2, STGWA25H120DF2 Electrical characteristics (curves) Figure 19. Switching times vs gate resistance GIPG270420141312FSR t (ns) tdoff Figure 20. Reverse recovery current vs diode current slope Irm (A) GIPG270420141317FSR IF = 25A, VCC = 600V 35 tf 30 100 tdon 25 20 tr 10 15 TJ= 175°C, VGE= 15V, IC= 25A, VCC= 600V 1 0 10 20 30 RG(Ω) 40 Figure 21. Reverse recovery time vs diode current slope GIPG270420141322FSR trr (ns) VCC = 600V, V GE = 15V TJ = 175°C, IF = 25A 10 5 300 700 di/dt(A/µs) 1500 Figure 22. Reverse recovery charge vs diode current slope GIPG270420141326FSR Qrr (nC) VCC = 600V, V GE = 15V TJ = 175°C, IF = 25A 3500 700 1100 3000 500 2500 300 2000 100 300 700 1100 1500 di/dt(A/µs) Figure 23. Reverse recovery energy vs diode current slope GIPG270420141330FSR Err (µJ) 1500 300 700 1100 Figure 24. Diode VF vs forward current VF (V) GIPG270420141355FSR TJ= -40°C VCC = 600V, V GE = 15V TJ = 175°C, IF = 25A 2000 8 TJ= 25°C 7 1800 6 5 1600 TJ= 175°C 4 1400 3 1200 1000 300 DS9297 - Rev 5 di/dt(A/µs) 1500 2 700 1100 1500 di/dt(A/µs) 1 0 20 40 60 80 IF(A) page 8/17 STGW25H120DF2, STGWA25H120DF2 Electrical characteristics (curves) Figure 25. Thermal impedence for IGBT ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-3 10-2 10-1 tp (s ) Figure 26. Thermal impedance for diode DS9297 - Rev 5 page 9/17 STGW25H120DF2, STGWA25H120DF2 Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching C A Figure 28. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 25 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS9297 - Rev 5 page 10/17 STGW25H120DF2, STGWA25H120DF2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 31. TO-247 package outline 0075325_9 DS9297 - Rev 5 page 11/17 STGW25H120DF2, STGWA25H120DF2 TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS9297 - Rev 5 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 12/17 STGW25H120DF2, STGWA25H120DF2 TO-247 long leads package information 4.2 TO-247 long leads package information Figure 32. TO-247 long leads package outline 8463846_2_F DS9297 - Rev 5 page 13/17 STGW25H120DF2, STGWA25H120DF2 TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS9297 - Rev 5 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 14/17 STGW25H120DF2, STGWA25H120DF2 Revision history Table 9. Document revision history Date Revision 03-Oct-2012 1 28-Feb-2014 2 Changes Initial release. Updated title and features in cover page. Minor text changes. Document status promoted from preliminary to production data. 31-Mar-2014 3 Updated Table 4: Static characteristics and Table 6: IGBT switching characteristics (inductive load). Added Section 2.1: Electrical characteristics (curves). DS9297 - Rev 5 06-Mar-2015 4 10-Mar-2021 5 Added 4.2: TO-247 long leads, package information. Minor text changes. Updated Table 1. Absolute maximum ratings. Minor text changes. page 15/17 STGW25H120DF2, STGWA25H120DF2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS9297 - Rev 5 page 16/17 STGW25H120DF2, STGWA25H120DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9297 - Rev 5 page 17/17