STH13N120K5-2AG

STH13N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 0.62 Ω typ., 12 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package Features TAB 2 Order code VDS RDS(on) max. ID PTOT STH13N120K5-2AG 1200 V 0.69 Ω 12 A 250 W 3 1 H2PAK-2 D(TAB) G(1) • • AEC-Q101 qualified Industry’s lowest RDS(on) x area • • • • Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications • S(2,3) NCHG1DTABS23TZ Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH13N120K5-2AG Product summary(1) Order code STH13N120K5-2AG Marking 13N120K5 Package H²PAK-2 Packing Tape and reel 1. HTRB test was performed at 80% of V(BR)DSS according to AEC-Q101 rev. C. All other tests were performed according to AEC-Q101 rev. D. DS12917 - Rev 5 - June 2020 For further information contact your local STMicroelectronics sales office. www.st.com STH13N120K5-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±30 V Drain current at TC = 25 °C 12 A Drain current at TC = 100 °C 7.6 A Drain current (pulsed) 48 A PTOT Total power dissipation at TC = 25 °C 250 W IAR (2) Maximum current during repetitive or single-pulse avalanche 4 A Single-pulse avalanche energy 215 mJ dv/dt (4) Peak diode recovery voltage slope 4.5 V/ns dv/dt(5) MOSFET dv/dt ruggedness 50 V/ns -55 to 150 °C Value Unit VGS ID IDM (1) EAS (3) TJ Tstg Parameter Operating junction temperature range Storage temperature range 1. Pulse width limited by safe operating area. 2. Pulse width limited by TJ max. 3. Starting TJ = 25 °C, ID = IAR, VDD = 50 V. 4. ISD ≤ 12 A, di/dt ≤ 100 A/µs, VDS (peak) ≤ V(BR)DSS. 5. VDS ≤ 960 V. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 30 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu. DS12917 - Rev 5 page 2/15 STH13N120K5-2AG Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 1200 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A VGS = 0 V, VDS = 1200 V, TC = 125 Unit V VGS = 0 V, VDS = 1200 V IDSS Max. 1 µA 50 µA ±10 µA 4 5 V 0.62 0.69 Ω Min. Typ. Max. Unit - 1370 - pF - 110 - pF - 0.6 - pF - 128 - pF - 42 - pF - 3 - Ω - 44.2 - nC - 7.3 - nC - 30 - nC °C(1) 3 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Co(er)(2) Time-related equivalent capacitance Energy-related equivalent capacitance RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0 V, VDS = 100 V, f = 1 MHz VGS = 0 V, VDS = 0 to 960 V f = 1 MHz, ID = 0 A VDD = 960 V, ID = 12 A, VGS = 0 to 10 V (see Figure 15. Test circuit for gate charge behavior) 1. Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS . Table 5. Switching times Symbol td(on) tr td(off) tf DS12917 - Rev 5 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 600 V, ID = 6 A, - 23 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 11 - ns Turn-off delay time (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) - 68.5 - ns - 18.5 - ns Fall time page 3/15 STH13N120K5-2AG Electrical characteristics Table 6. Source-drain diode Symbol ISD ISDM (1) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 12 A Source-drain current (pulsed) - 48 A 1.5 V Forward on voltage ISD = 12 A, VGS = 0 V - trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, - 630 ns Qrr Reverse recovery charge VDD = 60 V - 12.6 µC Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 40 A trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, - 892 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 15.6 µC IRRM Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 35 A VSD IRRM 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 7. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ±1 mA, ID = 0 A Min Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DS12917 - Rev 5 page 4/15 STH13N120K5-2AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Normalized transient thermal impedance Figure 1. Safe operating area ID (A) GC20540 GADG080220191517SOA Operation in this area is limited by RDS(on) 101 100 tp = 10 μs tp = 100 μs Single pulse T j ≤ 150 °C T c = 25°C 10-1 10-2 10-1 100 101 tp = 1 ms 102 tp = 10 ms VDS (V) 103 Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics GIPD300320151056MT ID (A) VGS=9, 10V 8V 20 GIPD300320151057MT ID (A) VDS=20V 20 15 15 7V 10 10 5 5 6V 0 0 10 5 VDS(V) 15 Figure 5. Typical gate charge characteristics GIPD300320151058MT VGS (V) VDS (V) VDD=960V ID=12A 10 1000 VDS 8 800 6 600 4 400 0 6 5 7 9 8 VGS(V) Figure 6. Typical drain-source on-resistance GIPD300320151223MT RDS(on) (Ω) VGS=10V 0.78 0.74 0.70 0.66 0.62 200 2 0 DS12917 - Rev 5 0 10 20 30 40 0 Qg(nC) 0.58 0.54 0 5 10 15 20 ID(A) page 5/15 STH13N120K5-2AG Electrical characteristics (curves) Figure 7. Typical capacitance characteristics GIPD300320151226MT C (pF) Figure 8. Typical output capacitance stored energy GIPD300320151232MT Eoss (µJ) 24 10000 Cies 1000 20 16 100 Coes 12 Cres 8 10 1 0.1 0.1 4 1 10 100 VDS(V) Figure 9. Normalized gate threshold vs temperature GIPD300320151241MT VGS(th) (norm) 0 0 200 400 800 600 1000 VDS(V) Figure 10. Normalized on-resistance vs temperature GIPD300320151244MT RDS(on) (norm) ID=100µA VGS=10V 2.5 1.2 2.0 1.0 1.5 0.8 1.0 0.6 0.4 -75 0.5 -25 25 75 125 TJ(°C) Figure 11. Normalized breakdown voltage vs temperature GIPD300320151249MT V(BR)DSS (norm) 0.0 -75 -25 25 125 75 TJ(°C) Figure 12. Typical reverse diode forward characteristics GIPD300320151251MT VSD (V) TJ=-50°C ID=1mA 0.9 1.08 TJ=25°C 0.8 1.00 0.7 TJ=150°C 0.92 0.84 -75 DS12917 - Rev 5 0.6 -25 25 75 125 TJ(°C) 0.5 2 4 6 8 10 ISD(A) page 6/15 STH13N120K5-2AG Electrical characteristics (curves) Figure 13. Maximum avalanche energy vs temperature GIPD300320151255MT EAS (mJ) ID=12 A VDD=50 V 200 150 100 50 0 -75 DS12917 - Rev 5 -25 25 75 125 TJ(°C) page 7/15 STH13N120K5-2AG Test circuits 3 Test circuits Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 17. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 19. Switching time waveform Figure 18. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12917 - Rev 5 page 8/15 STH13N120K5-2AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 H²PAK-2 package information Figure 20. H²PAK-2 package outline 8159712_9 DS12917 - Rev 5 page 9/15 STH13N120K5-2AG H²PAK-2 package information Table 8. H²PAK-2 package mechanical data Dim. mm Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 D 8.95 9.35 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 F2 1.14 1.70 H 10.00 10.40 H1 7.40 J1 2.49 2.69 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.50 1.70 M 2.60 2.90 R 0.20 0.60 V 0° 8° - 7.80 Figure 21. H²PAK-2 recommended footprint 8159712_9 Note: DS12917 - Rev 5 Dimensions are in mm. page 10/15 STH13N120K5-2AG Packing information 4.2 H²PAK-2 packing information Figure 22. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DS12917 - Rev 5 page 11/15 STH13N120K5-2AG Packing information Figure 23. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A G measured Tape slot In core for Full radius At hub Tape start Table 9. Tape and reel mechanical data Tape Dim. DS12917 - Rev 5 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 12/15 STH13N120K5-2AG Revision history Table 10. Document revision history Date Version 14-Feb-2019 1 Changes First release. Updated title and features in cover page. 10-Sep-2019 2 Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 2.1 Electrical characteristics (curves). Minor text changes. 23-Oct-2019 3 Modified Table 1. Absolute maximum ratings, Table 2. Thermal data, Table 3. On/off states, Table 4. Dynamic, Table 5. Switching times and Table 6. Source-drain diode. Modified Section 2.1 Electrical characteristics (curves). DS12917 - Rev 5 11-Mar-2020 4 Updated device summary in cover page. 16-Jun-2020 5 Updated Section 4 Package information. page 13/15 STH13N120K5-2AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 H²PAK-2 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS12917 - Rev 5 page 14/15 STH13N120K5-2AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12917 - Rev 5 page 15/15