STH245N75F3-6

STH245N75F3-6 Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ F3 Power MOSFET in a H²PAK-6 package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STH245N75F3-6 75 V 3.0 mΩ 180 A • Designed for automotive applications and AEC-Q101 qualified 7 • Conduction losses reduced 1 • Low profile, very low parasitic inductance H2PAK-6 Applications • Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Table 1. Device summary Order code Marking Packages Packaging STH245N75F3-6 245N75F3 H2PAK-6 Tape and reel July 2014 This is information on a product in full production. DocID026268 Rev 2 1/16 www.st.com Contents STH245N75F3-6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 8 DocID026268 Rev 2 STH245N75F3-6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 75 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 180 A Drain current (continuous) at TC = 100 °C 170 A Drain current (pulsed) 720 A Total dissipation at TC = 25 °C 300 W 2 W/°C 600 mJ -55 to 175 °C Value Unit Thermal resistance junction-case max 0.5 °C/W Thermal resistance junction-pcb max 35 °C/W ID (1) ID IDM (2) PTOT Derating factor EAS (3) Tstg Single pulse avalanche energy Storage temperature Operating junction temperature Tj 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 °C, ID = 60 A, VDD = 15 V. Table 3. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on 1 inch2 FR-4 2 oz Cu. DocID026268 Rev 2 3/16 16 Electrical characteristics 2 STH245N75F3-6 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate body leakage current Test conditions VGS= 0, ID = 250 µA Min. Typ. Max. 75 Unit V VGS= 0, VDS = 75 V 10 µA VGS= 0, VDS = 75 V, TC =125 °C 100 µA VDS = 0, VDS = ± 20 V ±200 nA 4 V 2.6 3.0 mΩ Min. Typ. Max. Unit - 6800 - pF - 1100 - pF - 50 - pF - 87 - nC - 30 - nC - 26 - nC VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2 VGS= 10 V, ID= 90 A Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS =0, VDS = 25 V, f = 1 MHz VDD= 37.5 V, ID= 120 A, VGS= 10 V (see Figure 14) Table 6. Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 37.5 V, ID = 60 A RG= 4.7 Ω, VGS= 10 V, (see Figure 13) Fall time DocID026268 Rev 2 Min. Typ. Max. Unit - 25 - ns - 70 - ns - 100 - ns - 15 - ns STH245N75F3-6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 180 A ISD (1) Source-drain current (pulsed) - 720 A VSD (2) Forward on voltage VGS = 0, ISD = 120 A - 1.5 V trr Reverse recovery time - 80 ns Qrr Reverse recovery charge - 180 nC IRRM Reverse recovery current ISD = 120 A,di/dt = 100 A/µs VDD = 30 V, Tj = 150 °C (see Figure 15) - 4.5 A ISD 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. DocID026268 Rev 2 5/16 16 Electrical characteristics 2.1 STH245N75F3-6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM08147v1 ID (A) s thi is ea ar (on) S D xR n n i ma tio ra by e d Op ite Lim 100 100µs 10 1ms 10ms 1 Tj=175°C Tc=25°C Single pulse 0.1 0.1 10 1 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM05545v1 ID (A) VGS=10V +9 ,' $ 350  6V 250  200  150   100 5V 50 0 0 9'6 9  300   1 2 3 4 5   VDS(V) Figure 6. Normalized V(BR)DSS vs temperature     9*69 Figure 7. Static drain-source on-resistance AM08148v1 RDS(on) (mΩ) VGS=10V 2.90 2.80 2.70 2.60 2.50 2.40 0 6/16 DocID026268 Rev 2 20 40 60 80 100 120 140 160 180 ID(A) STH245N75F3-6 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature +9 9*6WK QRUP  ,' —$          7-ƒ& Figure 12. Source-drain diode forward characteristics +9 96' 9 7- ƒ&    7- ƒ&  7- ƒ&          ,6'$ DocID026268 Rev 2 7/16 16 Test circuits 3 STH245N75F3-6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/16 0 DocID026268 Rev 2 10% AM01473v1 STH245N75F3-6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID026268 Rev 2 9/16 16 Package mechanical data STH245N75F3-6 Figure 19. H²PAK-6 drawing 8159693_Rev_F 10/16 DocID026268 Rev 2 STH245N75F3-6 Package mechanical data Table 8. H²PAK-6 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 - H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8° DocID026268 Rev 2 11/16 16 Package mechanical data STH245N75F3-6 Figure 20. H²PAK-6 recommended footprint (dimensions are in mm) footprint_Rev_F 12/16 DocID026268 Rev 2 STH245N75F3-6 5 Packaging mechanical data Packaging mechanical data Figure 21. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DocID026268 Rev 2 13/16 16 Packaging mechanical data STH245N75F3-6 Figure 22. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 9. H²PAK-6 tape and reel mechanical data Tape Reel mm mm Dim. 14/16 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID026268 Rev 2 Min. Max. 330 13.2 26.4 30.4 STH245N75F3-6 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 28-Apr-2014 1 Initial release. 24-Jul-2014 2 – Modified: title, description and Figure 1 in cover page – Minor text changes DocID026268 Rev 2 15/16 16 STH245N75F3-6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 16/16 DocID026268 Rev 2