STP10NK50Z

STP10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 package Datasheet — obsolete product Features Order code VDSS RDS(on) max ID PTOT STP10NK50Z 500 V < 0.7 Ω 9A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability TAB du 3 o r P 1 2 TO-220 e t e ol Applications ■ ) s ( ct Switching application ) (s Description s b O Figure 1. These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Internal schematic diagram D(2) t c u d o r P e G(1) t e l o s b O S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STP10NK50Z P10NK50Z TO-220 Tube March 2012 This is information on a discontinued product. Doc ID 11466 Rev 3 1/12 www.st.com 12 Contents STP10NK50Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit ................................................ 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/12 Doc ID 11466 Rev 3 STP10NK50Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain-source voltage 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 9 A ID A Drain current (continuous) at TC=100 °C 5.7 IDM(1) Drain current (pulsed) 36 PTOT Total dissipation at TC = 25 °C 125 Derating factor dv/dt(2) TJ du ro 4000 P e Peak diode recovery voltage slope let Operating junction temperature Storage temperature Tstg W 1 Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) o s b 1. Pulse width limited by safe operating area. ) s ( ct A W/°C V 4.5 V/ns -55 to 150 °C Value Unit 1 °C/W 2. ISD ≤9 A, di/dt ≤200 A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX Table 3. s ( t c Thermal data Symbol Rthj-case Parameter u d o Thermal resistance junction-case max Pr Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C e t e ol s b O O ) Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 9 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD=50 V) 230 mJ Doc ID 11466 Rev 3 3/12 Electrical characteristics 2 STP10NK50Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 4.5 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance s ( t c u d o Coss eq(1). Equivalent output capacitance r P e Qg t e l o Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Unit V 3.75 s b O 1 50 µA µA ±10 µA 4.5 V 0.7 Ω ) s ( ct u d o 3 r P e Test conditions )- Max. VDS = 500 V, TC = 125 °C t e l o Parameter Typ. VDS = 500 V IGSS Dynamic Min. 500 Zero gate voltage drain current (VGS = 0) Symbol 4/12 ID = 1 mA, VGS= 0 IDSS Table 6. s b O Test conditions 0.55 Min. Typ. Max. Unit VDS =25 V, f=1 MHz, VGS=0 - 1219 159 40 - pF pF pF VGS=0, VDS =0 to 640 V - 806 - pF - 39.2 7.42 20.7 - nC nC nC VDD=400 V, ID = 9 A VGS =10 V See Figure 15 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS Doc ID 11466 Rev 3 STP10NK50Z Electrical characteristics Table 7. Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time VDD=250 V, ID=4.5A, Min. Typ. Max. Unit - 19 17 - ns ns - 43 15 - ns ns Min Typ. Max RG=4.7Ω, VGS=10V Turn-off delay Time Fall time Table 8. See Figure 16 Source drain diode Symbol ISD Test conditions Parameter Test conditions Source-drain current - ISDM(1) Source-drain current (pulsed) - VSD(2) Forward on voltage ISD=9 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9 A, trr Qrr IRRM trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ) (s ete uc od Pr - ol - 268 1.83 13.7 di/dt = 100 A/µs, VDD=35 V, Tj=150 °C - 343 2.6 15.15 Min. Typ. di/dt = 100 A/µs, VDD=35 V s b O ) s ( t ISD=9 A, Unit 9 A 36 A 1.6 V ns µC A ns µC A t c u 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 9. P e d o r Symbol t e l o Gate-source zener diode Parameter Test conditions BVGSO(1) Gate-source breakdown voltage Igs=±1 mA (open drain) O bs 30 Max. Unit - V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 11466 Rev 3 5/12 Electrical characteristics STP10NK50Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ) s ( ct Figure 4. Output characterisics Figure 5. u d o r P e Transfer characteristics t e l o ) (s s b O t c u d o r P e let Figure 6. o s b Normalized BVDSS vs temperature Figure 7. O 6/12 Doc ID 11466 Rev 3 Static drain-source on resistance STP10NK50Z Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations ) s ( ct u d o Figure 11. Normalized on resistance vs temperature r P e t e l o ) (s s b O t c u d o r P e Figure 12. Source-drain diode forward characteristics t e l o Figure 13. Maximum avalanche energy vs temperature s b O Doc ID 11466 Rev 3 7/12 Test circuit 3 STP10NK50Z Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. ) s ( t VG 2.7kΩ c u d PW 47kΩ 1kΩ PW D.U.T. AM01468v1 e t e ol o r P AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B A D G S s ( t c 3.3 μF B 25 Ω D 1000 μF RG S r P e 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw let AM01470v1 Figure 18. Unclamped inductive waveform b O L VD VDD u d o G so )- L=100μH s b O AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 11466 Rev 3 10% AM01473v1 STP10NK50Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. 4.40 4.60 b 0.61 0.88 b1 1.14 c 0.48 D 15.25 u d o 1.70 e t e ol 1.27 E 10 e 2.40 e1 4.95 F 1.23 6.20 J1 u d o L Pr L1 b O bs ) s ( ct H1 so ) s ( ct A D1 -O Pr 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.40 2.72 13 14 3.50 3.93 L20 16.40 L30 28.90 e t e l Max. ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 11466 Rev 3 9/12 Package mechanical data STP10NK50Z Figure 20. TO-220 type A drawing ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r 0015988_typeA_Rev_S P e t e l o s b O 10/12 Doc ID 11466 Rev 3 STP10NK50Z 5 Revision history Revision history Table 11. Document revision history Date Revision Changes 01-Jul-2005 1 First release. 08-Sep-2005 2 Inserted ecopack indication 15-Mar-2012 3 The part number STF10NK50Z has been moved to a separate datasheet. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 11466 Rev 3 11/12 STP10NK50Z ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. 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