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STP11NK50Z

STP11NK50Z

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 500V 10A TO-220

  • 数据手册
  • 价格&库存
STP11NK50Z 数据手册
STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type STB11NK50Z STP11NK50ZFP STP11NK50Z ■ ■ ■ ■ VDSS 500 V 500 V 500 V RDS(on) max ID Pw 125 W 30 W 125 W 1 2 3 < 0.52 Ω 10 A < 0.52 Ω 10 A < 0.52 Ω 10 A 3 1 2 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances 1 3 D2PAK Application ■ Switching applications Figure 1. Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Table 1. Device summary Marking B11NK50Z P11NK50ZFP P11NK50Z Package D²PAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STB11NK50ZT4 STP11NK50ZFP STP11NK50Z May 2008 Rev 6 1/16 www.st.com 16 Contents STB11NK50Z - STP11NK50ZFP - STP11NK50Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................. 7 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 D²PAK VDS VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor VESD(G-S) dv/dt(3) VISO TJ Tstg Gate source ESD (HBM-C= 100 pF, R= 1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature --55 to 150 10 6.3 40 125 1 4000 4.5 2500 500 ± 30 10 (1) Unit TO-220FP V V A A A W W/°C V V/ns V °C 6.3(1) 40(1) 30 0.24 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Thermal data Value Symbol Parameter TO-220 D²PAK Unit TO-220FP 4.2 62.5 300 °C/W °C/W °C Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1 Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting TJ = 25 °C, ID=IAR, VDD = 50 V) Value 10 190 Unit A mJ 3/16 Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating @125 °C VGS = ±20 V VDS= VGS, ID = 100 µA VGS= 10 V, ID= 4.5 A 3 3.75 0.48 Min. 500 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω 4.5 0.52 Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15 V, ID = 4.5 A Min. Typ. 7.7 1390 173 42 110 49 10 25 68 Max. Unit S pF pF pF pF nC nC nC VDS =25 V, f=1 MHz, VGS=0 Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS=0, VDS =0 to 400 V VDD=400 V, ID = 11.4 A VGS =10 V (see Figure 18) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical characteristics Table 7. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Test conditions VDD= 250 V, ID=5.5 A, RG= 4.7 Ω, VGS=10 V (see Figure 19) VDD = 250 V, ID=5.5 A, RG = 4.7 Ω, VGS=10 V (see Figure 19) VDD=400 V, ID=11.4 A, RG=4.7 Ω, VGS=10 V (see Figure 19) Min. Typ. 14.5 18 Max. Unit ns ns Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time 41 15 11.5 12 27 ns ns ns ns ns Table 8. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10 A, VGS=0 ISD=10 A, di/dt = 100 A/µs, VDD=45 V, Tj=150 °C 308 2.4 16 Test conditions Min Typ. Max 10 40 1.6 Unit A A V ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 9. Symbol Gate-source Zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V BVGSO(1) Gate-source breakdown voltage Igs=±1mA (open drain) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / D²PAK Figure 3. Thermal impedance for TO-220 / D²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Figure 8. Transconductance Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z Figure 15. Normalized BVDSS vs temperature Figure 16. Maximum avalanche energy vs temperature 8/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Test circuit 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/16 Package mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/16 Package mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z TO-220FP mechanical data Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 Dia F1 D F G1 H F2 L2 L5 E 123 L4 7012510-I 12/16 G STB11NK50Z - STP11NK50ZFP - STP11NK50Z Package mechanical data D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 13/16 Packaging mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Revision history 6 Revision history Table 10. Date 08-Sep-2005 14-Oct-2005 26-Mar-2006 29-Apr-2008 Revision history Revision 3 4 5 6 Changes Complete version with curves Inserted ecopack indication New template, no content change IGSS value changed in Table 6 15/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16
STP11NK50Z 价格&库存

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STP11NK50Z
  •  国内价格
  • 10+13.43470
  • 100+10.94370
  • 200+8.77730
  • 300+7.83700
  • 500+7.27430
  • 1000+5.59780

库存:52