STP20NK50Z

STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 17 17 17 17 A A A A Pw 190 190 190 190 W W W W 1 3 2 1 2 3 s s TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-247 3 12 3 1 I2SPAK D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STB20NK50ZT4 STB20NK50Z-S STP20NK50Z STW20NK50Z May 2004 MARKING B20NK50Z B20NK50Z P20NK50Z W20NK50Z PACKAGE D2PAK I2SPAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE TUBE 1/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100 pF, R=1.5 KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 500 500 ± 30 17 10.71 68 190 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C ( ) Pulse width limited by safe operating area (1) ISD ≤17A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220/D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 62.5 300 0.66 50 TO-247 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 17 850 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V VDS = VGS, ID = 100 µA VGS = 10V, ID = 8.5 A 3 3.75 0.23 Min. 500 1 50 ±10 4.5 0.27 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions VDS = 15 V, ID = 8.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 13 2600 328 72 187 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 640V SWITCHING ON/OFF Symbol td(on) tr td(off) tf Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250 V, ID = 8.5 A RG = 4.7Ω , VGS = 10 V (Resistive Load see, Figure 3) VDD = 400 V, ID = 17 A, VGS = 10 V Min. Typ. 28 20 70 15 85 15.5 42 119 Max. Unit ns ns ns ns nC nC nC SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A, VGS = 0 ISD = 17 A, di/dt = 100 A/µs VR = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD = 17 A, di/dt = 100 A/µs VR = 100 V, Tj = 150°C (see test circuit, Figure 5) 355 3.90 22 440 5.72 26 Test Conditions Min. Typ. Max. 17 68 1.6 Unit A A V ns µC A ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Safe Operating Area for TO-220 / D2PAK/ I2SPAK Thermal Impedance for TO-220 / D2PAK/I2SPAK Safe Operating Area for TO-247 Thermal Impedance for TO-247 Output Characteristics Transfer Characteristics 4/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 øP Q 8/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M 4.88 15 1.27 1.4 2.4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 9/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 0.40 1 3 2 2 3 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2 5º 60º 3.55 3.65 0.14 3 0.07 5º 60º 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05 DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia 10/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S I2SPAK MECHANICAL DATA mm. MIN. 4.40 2.49 0.70 1.14 0.45 1.23 8.95 10.00 4.88 16.7 1.27 13.82 TYP MAX. 4.60 2.69 0.93 1.70 0.60 1.36 9.35 10.40 5.28 17.5 1.4 14.42 MIN. 0.173 0.098 0.027 0.045 0.018 0.048 0.352 0.394 0.192 0.657 0.05 0.544 inch TYP. MAX. 0.181 0.106 0.037 0.067 0.024 0.053 0.368 0.409 0.208 0.689 0.055 0.568 DIM. A A1 B B2 C C2 D E G L L2 L3 11/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 BASE QTY 1000 * on sales type 12/13 STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 13/13