STP36N60M6

STP36N60M6, STW36N60M6 N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code STP36N60M6 STW36N60M6 1 TO-220 2 3 1 2 3 TO-247 Figure 1: Internal schematic diagram x x x x x VDS RDS(on) max. ID 600 V 99 mΩ 30 A Reduced switching losses Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications x Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum endapplication efficiency. Table 1: Device summary Order code STP36N60M6 STW36N60M6 March 2017 Marking 36N60M6 DocID028429 Rev 3 This is information on a product in full production. Package TO-220 TO-247 Packaging Tube 1/16 www.st.com Contents STP36N60M6, STW36N60M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/16 4.1 TO-220 type A package information ................................................ 11 4.2 TO-247 package information ........................................................... 13 Revision history ............................................................................ 15 DocID028429 Rev 3 STP36N60M6, STW36N60M6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 30 A ID Drain current (continuous) at TC = 100 °C 19 A ID(1) Drain current (pulsed) 102 A PTOT VGS Parameter Total dissipation at TC = 25 °C 208 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1) Pulse width limited by safe operating area. (2)I SD (3)V ≤ 30 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V. DS ≤ 480 V Table 3: Thermal data Symbol Parameter Value TO-220 Rthj-case Rthj-amb Thermal resistance junction-case Thermal resistance junction-ambient Unit TO-247 0.6 °C/W 50 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) DocID028429 Rev 3 Value Unit 5 A 750 mJ 3/16 Electrical characteristics 2 STP36N60M6, STW36N60M6 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 μA VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 μA IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 15 A ±5 μA 4 4.75 V 85 99 mΩ Min. Typ. Max. Unit 3.25 Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Test conditions - 1960 - pF VDS= 100 V, f = 1 MHz, VGS = 0 V - 93 - pF - 6 - pF Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 332 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.6 - Ω Qg Total gate charge - 44.3 - nC Qgs Gate-source charge - 10.1 - nC Qgd Gate-drain charge VDD = 480 V, ID = 30 A, VGS = 0 to 10 V (see Figure 17: "Test circuit for gate charge behavior") - 25 - nC Notes: (1)C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS 4/16 DocID028429 Rev 3 STP36N60M6, STW36N60M6 Electrical characteristics Table 7: Switching times Symbol td(on) Parameter Turn-on delay time tr Rise time td(off) Turn-off-delay time tf Fall time Test conditions Min. Typ. Max. Unit VDD = 300 V, ID = 15 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times" and Figure 21: "Switching time waveform") - 15.2 - ns - 5.3 - ns - 50.2 - ns - 7.3 - ns Min. Typ. Max. Unit Table 8: Source drain diode Symbol Parameter Test conditions ISD Source-drain current - 30 A ISDM,(1) Source-drain current (pulsed) - 102 A VSD (2) Forward on voltage VGS = 0 V, ISD = 30 A - 1.6 V ISD = 30 A, di/dt = 100 A/μs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 340 ns - 5.3 μC - 31 A ISD = 30 A, di/dt = 100 A/μs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 430 ns - 7.7 μC - 36 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulse width is limited by safe operating area. (2)Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID028429 Rev 3 5/16 Electrical characteristics 2.1 STP36N60M6, STW36N60M6 Electrical characteristics (curves) Figure 2: Safe operating area for TO-220 Figure 3: Thermal impedance for TO-220 GC20540_ZTH K δ=0.5 δ=0.2 0.1 0.05 10 -1 0.02 0.01 Single pulse 10 Figure 4: Safe operating area for TO-247 -2 10-5 10-4 10-3 10 -2 10 -1 tp(s) Figure 5: Thermal impedance for TO-247 K GC18460_ZTH δ=0.5 δ=0.2 0.1 10 -1 0.05 0.02 0.01 10 -2 10 -3 10-5 Figure 6: Output characteristics 6/16 Single pulse 10-4 10-3 10 -2 10 -1 tp(s) Figure 7: Transfer characteristics DocID028429 Rev 3 STP36N60M6, STW36N60M6 Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance Figure 10: Capacitance variations Figure 11: Normalized gate threshold voltage vs temperature Figure 12: Normalized on-resistance vs temperature Figure 13: Normalized V(BR)DSS vs temperature DocID028429 Rev 3 7/16 Electrical characteristics STP36N60M6, STW36N60M6 Figure 14: Output capacitance stored energy 8/16 Figure 15: Source-drain diode forward characteristics DocID028429 Rev 3 STP36N60M6, STW36N60M6 3 Test circuits Test circuits Figure 16: Test circuit for resistive load switching times Figure 17: Test circuit for gate charge behavior Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform DocID028429 Rev 3 9/16 Package information 4 STP36N60M6, STW36N60M6 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID028429 Rev 3 STP36N60M6, STW36N60M6 4.1 Package information TO-220 type A package information Figure 22: TO-220 type A package outline DocID028429 Rev 3 11/16 Package information STP36N60M6, STW36N60M6 Table 9: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 D1 12/16 Typ. 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID028429 Rev 3 STP36N60M6, STW36N60M6 4.2 Package information TO-247 package information Figure 23: TO-247 package outline 0075325_8 DocID028429 Rev 3 13/16 Package information STP36N60M6, STW36N60M6 Table 10: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 e 5.30 L 14.20 L1 3.70 L2 14/16 Typ. 15.75 5.45 5.60 14.80 4.30 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID028429 Rev 3 3.65 5.50 5.50 5.70 STP36N60M6, STW36N60M6 5 Revision history Revision history Table 11: Document revision history Date Revision 06-Oct-2015 1 First release 14-Oct-2015 2 Updated: VDD value in Table 8: "Source drain diode" Minor text changes 3 Updated Table 2: "Absolute maximum ratings". Updated Section 2: "Electrical characteristics". Updated Section 4: "Package information". Minor text changes 27-Mar-2017 Changes DocID028429 Rev 3 15/16 STP36N60M6, STW36N60M6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 16/16 DocID028429 Rev 3