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STP70NS04ZC

STP70NS04ZC

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STP70NS04ZC - N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET - STMicroelec...

  • 数据手册
  • 价格&库存
STP70NS04ZC 数据手册
STP70NS04ZC N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET Features Type STP70NS04ZC ■ ■ ■ VDSS Clamped RDS(on) < 10mΩ ID 80A Low capacitance and gate charge 100% avalanche tested 175°C maximum junction temperature TO-220 3 1 2 Description This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Internal schematic diagram Applications ■ Switching applications – ABS, solenoid drivers – Motor control – Dc-dc converters Order code Part number STP70NS04ZC Marking P70NS04ZC Package TO-220 Packaging Tube May 2007 Rev 1 1/13 www.st.com 13 Contents STP70NS04ZC Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/13 STP70NS04ZC Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDG VGS ID (2) ID (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) drain-gate voltage Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain gate current (continuous) Gate-source current (continuous) Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Gate-source ESD (HBM-C=100pF, R=1.5KΩ) Gate-drain ESD (HBM-C=100pF, R=1.5KΩ) Drain-source ESD (HBM-C=100pF, R=1.5KΩ) Operating junction temperature Storage temperature Value 33 (1) 33 (1) (1) Unit V V V A A A A A W W/°C kV kV kV °C ±20 80 63 ±50 ±50 320 180 1.2 ±8 ±8 ±8 -55 to 175 IDG IGS IDM (3) PTOT VESD(G-S) VESD(G-D) VESD(D-S) TJ Tstg 1. Voltage is limited by zener diodes 2. Current limited by wire bonding 3. Pulse width limited by safe operating area Table 2. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.83 62.5 300 Unit °C/W °C/W °C Table 3. Symbol IAS EAS Avalanche data Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD=50V) Value 30 720 Unit A mJ 3/13 Electrical characteristics STP70NS04ZC 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DG IDSS IGSS VGSS VGS(th) RDS(on) On/off states Parameter Clamped voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = 16V VGS = ±10V IGS =±100µA VDS= VGS, ID = 1mA VGS= 10V, ID= 40A 18 2 3 8 4 11 Min. 33 1 2 Typ. Max. Unit V µA µA V V mΩ Table 5. Symbol gfs (1) Ciss Coss Crss tr(Voff) tf tc Qg Qgs Qgd RG Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Off voltage rise time Fall time Cross-over time Total gate charge Gate-source charge Gate-drain charge Internal gate resistor Test conditions VDS =15V, ID = 30A Min. Typ. 35 1930 700 230 110 90 140 58 14 26 14 Max. Unit S pF pF pF ns ns ns nC nC nC Ω VDS =25V, f=1 MHz, VGS=0 VCLAMP=32V, ID=60A, VGS=10V, RG=4.7Ω (see Figure 14) VDD=32V, ID = 60A VGS =10V (see Figure 15) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/13 STP70NS04ZC Electrical characteristics Table 6. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VGS=0 ISD=80A, di/dt = 100A/µs, VDD= 30 V, Tj=150°C (see Figure 19) 90 0.18 4 Test conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns µC A VSD(2) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13 Electrical characteristics STP70NS04ZC 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STP70NS04ZC Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 7/13 Electrical characteristics Figure 13. Normalized IDSS vs temperature STP70NS04ZC 8/13 STP70NS04ZC Test circuit 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/13 Package mechanical data STP70NS04ZC 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STP70NS04ZC Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/13 Revision history STP70NS04ZC 5 Revision history Table 7. Date 04-May-2007 Revision history Revision 1 First release Changes 12/13 STP70NS04ZC Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13
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