STP180NS04ZC

STP180NS04ZC N-channel clamped 3.5 mΩ - 120 A TO-220 fully protected SAFeFET™ Power MOSFET Features Type STP180NS04ZC ■ ■ ■ VDSS Clamped RDS(on) max < 4.2 mΩ ID 120 A Low capacitance and gate charge 100% avalanche tested 175°C maximum junction temperature 1 3 2 TO-220 Applications ■ Switching application Description This fully clamped Power MOSFET is produced by using the latest advanced company’s mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Figure 1. Internal schematic diagram Table 1. Device summary Marking P180NS04ZC Package TO-220 Packaging Tube Order code STP180NS04ZC April 2008 Rev 1 1/12 www.st.com 12 Contents STP180NS04ZC Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP180NS04ZC Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VDG VGS ID (2) ID (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain gate current (continuous) Gate-source current (continuous) Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Gate-source ESD (HBM-C=100 pF, R=1.5 kΩ) Gate-drain ESD (HBM-C=100 pF, R=1.5 kΩ) Drain-source ESD (HBM-C=100 pF, R=1.5 kΩ) Operating junction temperature Storage temperature Value 33 (1) 33 (1) (1) Unit V V V A A mA mA A W W/°C kV kV kV °C ± 20 120 120 ±50 ±50 480 300 2 ±8 ±8 ±8 -55 to 175 IDG IGS IDM (3) PTOT VESD(G-S) VESD(G-D) VESD(D-S) TJ Tstg 1. Voltage is limited by zener diodes 2. Current limited by wire bonding 3. Pulse width limited by safe operating area Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.50 62.5 300 Unit °C/W °C/W °C Table 4. Symbol IAS Avalanche data Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax δ < 1%) Single pulse avalanche energy (starting Tj=25 °C, ID=IAS, VDD=21 V) (see Figure 17, Figure 14.) Value 80 Unit A EAS 1000 mJ 3/12 Electrical characteristics STP180NS04ZC 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DG VDSR(CL) On/off states Parameter Clamped voltage Drain-source clamping voltage (DC) Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate-source breakdown voltage Gate threshold voltage Static drain-source on resistance Internal gate resistor Test conditions ID = 1 mA, VGS = 0 -40 < Tj < 175 °C IGS(CL) = -2 mA, ID = 1 A VDS = 16 V VDS = 16 V, Tj = 150 °C VDS = 16 V, Tj = 175 °C VGS = ±10 V VGS = ±10 V,Tj = 175 °C VGS = ±16 V,Tj = 175 °C IGS = ±100 µA VDS = VGS, ID = 1 mA VGS = 10 V, ID = 40 A 18 2 3 3.5 14 Min. 33 41 1 50 100 2 50 150 25 4 4.2 Typ. Max. 41 Unit V V µA µA µA µA µA µA V V mΩ Ω IDSS IGSS (1) VGSS VGS(th) RDS(on) RG 1. Gate Oxide, without zener diodes, tested at wafer sorting (IGSS < ± 100 nA @ ± 20 V Tj=25°). Figure 17.: Unclamped Inductive load test circuit for electrical schematics Table 6. Symbol gfs (1) Ciss Coss Crss tr(Voff) tf tc Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Off voltage rise time Fall time Cross-over time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V, ID = 40 A Min. Typ. 95 4560 1700 550 250 115 290 110 29 40 Max. Unit S pF pF pF ns ns ns nC nC nC VDS =25 V, f=1 MHz, VGS=0 VCLAMP=30 V, ID=80 A, VGS=10 V, RG=4.7 Ω (see Figure 16) VDD=20 V, ID = 120 A VGS =10 V (see Figure 15) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 STP180NS04ZC Electrical characteristics Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, VGS=0 ISD=120 A, di/dt = 100 A/µs, VDD= 32 V, Tj=150 °C (see Figure 16) 56 70 12 Test conditions Min. Typ. Max. 120 480 1.5 Unit A A V ns nC A VSD(2) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% 5/12 Electrical characteristics STP180NS04ZC 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 STP180NS04ZC Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature 7/12 Test circuit STP180NS04ZC 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Unclamped inductive waveform Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit 8/12 STP180NS04ZC Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STP180NS04ZC TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 10/12 STP180NS04ZC Revision history 5 Revision history Table 8. Date 03-Apr-2008 Document revision history Revision 1 First release Changes 11/12 STP180NS04ZC Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12