STP76NF75

STB76NF75, STI76NF75 STP76NF75 N-channel 75 V, 0.0095 Ω, 80 A TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET Features RDS(on) max ID Type VDSS STB76NF75 75 V < 0.011 Ω 80 A(1) STI76NF75 75 V < 0.011 Ω 80 A(1) STP76NF75 75 V < 0.011 Ω 80 A(1) 3 1 3 1 2 D²PAK TO-220 1. Current limited by package ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 12 I²PAK Application ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description $4!"OR This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB76NF75 B76NF75 D²PAK Tape and reel STI76NF75 I76NF75 I²PAK Tube STP76NF75 P76NF75 TO-220 Tube December 2009 Doc ID 13780 Rev 2 1/15 www.st.com 15 Contents STB76NF75, STI76NF75, STP76NF75 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 13780 Rev 2 STB76NF75, STI76NF75, STP76NF75 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VDS VDGR Parameter Value Unit Drain-source voltage (VGS = 0) 75 V Drain-gate voltage (RGS = 20 kΩ) 75 V ± 20 V VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C 80 A ID(1) Drain current (continuous) at TC=100 °C 70 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C Peak diode recovery voltage slope 12 V/ns Single pulse avalanche energy 700 mJ Operating junction temperature Storage temperature -55 to 175 °C Value Unit IDM (2) PTOT (3) dv/dt EAS (4) TJ Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 4. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case max 0.5 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose (1) 300 °C 1. 1.6mm from case for 10 sec Doc ID 13780 Rev 2 3/15 Electrical characteristics 2 STB76NF75, STI76NF75, STP76NF75 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS= VGS , ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A V(BR)DSS Table 5. Symbol Typ. Max. 75 2 Unit V 3 1 10 µA µA ±100 nA 4 V 0.0095 0.011 W Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V, ID = 40 A - 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 3700 730 240 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60 V, ID = 80 A VGS =10 V - 117 27 47 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 4/15 Min. Doc ID 13780 Rev 2 160 nC nC nC STB76NF75, STI76NF75, STP76NF75 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD VDD= 37.5 V, ID= 45 A, RG=4.7 Ω, VGS=10 V Figure 14 on page 8 Min. Typ. Max. Unit - 25 100 66 30 - ns ns ns ns Min Typ. Max Unit Source drain diode Parameter Test conditions Source-drain current - 80 A (1) Source-drain current (pulsed) - 320 A (2) Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 16 on page 8 - ISDM VSD Turn-on delay time Rise time Turn-off delay time Fall time Test conditions trr Qrr IRRM 132 660 10 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 13780 Rev 2 5/15 Electrical characteristics STB76NF75, STI76NF75, STP76NF75 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/15 Doc ID 13780 Rev 2 STB76NF75, STI76NF75, STP76NF75 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 13780 Rev 2 7/15 Test circuits 3 STB76NF75, STI76NF75, STP76NF75 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 8/15 Doc ID 13780 Rev 2 AM01471v1 STB76NF75, STI76NF75, STP76NF75 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13780 Rev 2 9/15 Package mechanical data STB76NF75, STI76NF75, STP76NF75 D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 in c h Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 2.54 4.88 15 2.49 2.29 1.27 1.30 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0079457_M 10/15 Min Doc ID 13780 Rev 2 8° STB76NF75, STI76NF75, STP76NF75 Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Doc ID 13780 Rev 2 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 11/15 Package mechanical data STB76NF75, STI76NF75, STP76NF75 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 12/15 Doc ID 13780 Rev 2 STB76NF75, STI76NF75, STP76NF75 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type Doc ID 13780 Rev 2 13/15 Revision history 6 STB76NF75, STI76NF75, STP76NF75 Revision history Table 8. 14/15 Document revision history Date Revision Changes 25-Jul-2007 1 Initial release 14-Dec-2009 2 Added new package, mechanical data: I²PAK Doc ID 13780 Rev 2 STB76NF75, STI76NF75, STP76NF75 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 13780 Rev 2 15/15