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STP80NF55-08

STP80NF55-08

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 55V 80A TO-220

  • 数据手册
  • 价格&库存
STP80NF55-08 数据手册
STB80NF55-08 STP80NF55-08 - STW80NF55-08 N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET™ Power MOSFET Features Type STB80NF55-08 STP80NF55-08 STW80NF55-08 ■ VDSS 55 V 55 V 55 V RDS(on) max < 0.008 Ω < 0.008 Ω < 0.008 Ω ID 80 A 80 A 80 A TO-247 1 2 3 TO-220 Standard threshold drive 3 1 Application ■ Switching applications D²PAK Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking B80NF55-08 P80NF55-08 W80NF55-08 Package D²PAK TO-220 TO-247 Packaging Tape & reel Tube Tube STB80NF55-08 STP80NF55-08 STW80NF55-08 March 2008 Rev 1 1/15 www.st.com 15 Contents STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuos) at TC = 25 °C Drain current (continuos) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 55 ±20 80 80 320 300 2 -55 to 175 Unit V V A A A W W/°C °C ID (1) IDM (2) PTOT Tj Tstg Operating junction temperature Storage temperature 1. Current limited package 2. Pulse width limited by safe operating area Table 3. Symbol Rthj-case Rthj-amb Tl Thermal resistance Value Parameter D2PAK Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 35(1) 300 TO-220 0.5 62.5 50 TO-247 °C/W °C/W °C Unit 1. When mounted on 1 inch2 FR-4 board, 2 oz Cu Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) Max value 40 1000 Unit A mJ 3/15 Electrical characteristics STP80NF55-08 - STB80NF55-08 - STW80NF55-08 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS = 0 VDS = max rating VDS = max rating@125 °C VGS = ±20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A 2 3 Min. 55 1 10 ±100 4 Typ. Max. Unit V µA µA nA V Ω 0.0065 0.008 Table 6. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V , ID = 18 A VDS = 25 V, f = 1 MHz, VGS= 0 VDD= 27 V, ID = 80 A VGS =10 V (see Figure 14) Min. Typ. 40 3740 830 265 112 20 40 155 Max. Unit S pF pF pF nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/15 STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 27 V, ID = 40 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Min. Typ. 20 110 75 35 Max. Unit ns ns ns ns Table 8. Symbol ISD ISDM (1) VSD trr(2) Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A,VDD = 25 V di/dt=100 A/µs, Tj =150 °C (see Figure 18) 80 230 5.7 Test conditions Min Typ. Max 80 320 1.5 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/15 Electrical characteristics STP80NF55-08 - STB80NF55-08 - STW80NF55-08 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/15 STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/15 Test circuit STP80NF55-08 - STB80NF55-08 - STW80NF55-08 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/15 STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:: www.st.com 9/15 Package mechanical data STP80NF55-08 - STB80NF55-08 - STW80NF55-08 TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 10/15 STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 11/15 Package mechanical data STP80NF55-08 - STB80NF55-08 - STW80NF55-08 D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 12/15 STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 13/15 Revision history STP80NF55-08 - STB80NF55-08 - STW80NF55-08 6 Revision history Table 9. Date 03-Mar-2008 Document revision history Revision 1 First release Changes 14/15 STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15
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