STP85N3LH5

STD85N3LH5 STP85N3LH5 - STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features Type STD85N3LH5 STP85N3LH5 STU85N3LH5 ■ ■ ■ ■ VDSS 30 V 30 V 30 V RDS(on) max < 0.005 Ω < 0.0054 Ω < 0.0054 Ω ID 80 A 80 A 80 A DPAK IPAK 3 1 1 3 2 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 1 3 2 TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking 85N3LH5 85N3LH5 85N3LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube STD85N3LH5 STP85N3LH5 STU85N3LH5 September 2008 Rev 5 1/16 www.st.com 16 Contents STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VDS VGS ID (1) ID IDM (2) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-source voltage (VGS = 0) @ TJMAX Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 30 35 ± 22 80 55 320 70 0.47 165 -55 to 175 175 Unit V V V A A A W W/°C mJ °C °C EAS (3) Tstg Tj Single pulse avalanche energy Storage temperature Max. operating junction temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Table 3. Symbol Rthj-case Rthj-amb Tj Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-case max Maximum lead temperature for soldering purpose Value 2.14 100 275 Unit °C/W °C/W °C 3/16 Electrical characteristics STD85N3LH5 - STP85N3LH5 - STU85N3LH5 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) Static Parameter Drain-source breakdown Voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 250 µA, VGS= 0 VDS = 20 V VDS = 20 V,Tc = 125 °C VGS = ± 22 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A SMD version VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A SMD version VGS = 5 V, ID = 40 A 1 0.042 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω 2.5 0.005 RDS(on) Static drain-source on resistance 0.0046 0.0054 0.0052 0.0065 0.0058 0.0071 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Test conditions VDS = 25 V, f=1 MHz, VGS = 0 VDD = 15 V, ID = 80 A VGS = 5 V (see Figure 16) VDD = 15 V, ID = 80 A VGS = 5 V (see Figure 19) f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain 4.5 nC Min Typ. 1850 380 58 14 6.8 4.7 2.3 Max. Unit pF pF pF nC nC nC nC RG Gate input resistance 1.2 Ω 4/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Rise time Test conditions VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V (see Figure 15) VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V (see Figure 15) Min. Typ. 6 14 Max. Unit ns ns Turn-off delay time Fall time 23.6 10.8 ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, VGS = 0 ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V (see Figure 17) 31.8 26.1 1.6 Test conditions Min. Typ. Max. 80 320 1.1 Unit A A V ns nC A VSD(2) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 5/16 Electrical characteristics STD85N3LH5 - STP85N3LH5 - STU85N3LH5 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/16 Test circuit STD85N3LH5 - STP85N3LH5 - STU85N3LH5 3 Test circuit Figure 14. Unclamped inductive waveform Figure 13. Unclamped inductive load test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Switching time waveform switching and diode recovery times 8/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Figure 19. Gate charge waveform Id Vds Vgs Test circuit Vgs(th) Qgs1 Qgs2 Qgd 9/16 Package mechanical data STD85N3LH5 - STP85N3LH5 - STU85N3LH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/16 Package mechanical data STD85N3LH5 - STP85N3LH5 - STU85N3LH5 TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 12/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 13/16 Packaging mechanical data STD85N3LH5 - STP85N3LH5 - STU85N3LH5 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 14/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Revision history 6 Revision history Table 8. Date 19-Oct-2007 20-Feb-2008 Document revision history Revision 1 2 First release Minor text changes to improve readability – – – – Added new package, mechanical data: TO-220 Figure 2: Safe operating area has been corrected Figure 7: Static drain-source on resistance updated New value on Table 2: Absolute maximum ratings Changes 21-Jul-2008 3 20-Aug-2008 25-Sep-2008 4 5 Added max value on VGS(th) (Table 4) VGS values has been changed on Table 2 and Table 4 15/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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