STPSC40065CWY

STPSC40065C-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. A2 A2 Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter. K A1 TO-247 Table 1: Device summary Features       No reverse recovery charge in application current range Switching behavior independent of temperature Dedicated to PFC applications AEC-Q101 qualified PPAP capable ECOPACK®2 compliant component May 2016 DocID029263 Rev 2 This is information on a product in full production. Symbol Value IF(AV) 2 x 20 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V 1/9 www.st.com Characteristics 1 STPSC40065C-Y Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) 650 V IF(RMS) Forward rms current 40 A IF(AV) Average forward current IFRM Repetitive peak forward current IFSM Surge non repetitive forward current Tstg Tc = 140 °C(1), DC, per diode 20 Tc = 130 °C(1), DC, per device 40 Tc =140 °C, Tj = 175 °C, δ = 0.1 87 tp = 10 ms sinusoidal, Tc = 25 °C 90 tp = 10 ms sinusoidal, Tc = 125 °C 70 tp = 10 µs square, Tc = 25 °C 400 A Storage temperature range Operating junction Tj temperature(2) A A -55 to +175 °C -40 to +175 °C Value Unit Notes: (1)Value (2)(dP based on Rth(j-c) max. tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Rth(j-c) Parameter Per diode 0.90 Total 0.60 Junction to case Coupling Rth(c) °C/W 0.30 Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Tj = 25 °C IR(1) Reverse leakage current Tj = 150 °C Tj = 25 °C VR = VRRM VF Forward voltage drop Tj = 150 °C IF = 20 A Tj = 175 °C Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.02 x IF(AV) + 0.039 x IF2(RMS) 2/9 DocID029263 Rev 2 Typ. Max. - 30 300 - 280 2000 15 150 - 1.30 1.45 - 1.45 1.65 - 1.50 VR = 600 V Tj = 25 °C (2) Min. Unit µA V STPSC40065C-Y Characteristics Table 5: Dynamic electrical characteristics (per diode) Symbol Parameter QCj(1) Total capacitive charge Cj Total capacitance Test conditions Min. Typ. Max. Unit VR = 400 V - 62 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 1250 - VR = 400 V, Tc = 25 °C, F = 1 MHz - 100 - pF Notes: (1)Most 𝑉 accurate value for the capacitive charge: 𝑄𝑐𝑗 = ∫0 𝑂𝑈𝑇 𝐶𝐽 (𝑉𝑅 ) • 𝑑𝑉𝑅 DocID029263 Rev 2 3/9 Characteristics 1.1 STPSC40065C-Y Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values, per diode) Figure 2: Reverse leakage current versus reverse voltage applied (typical values, per diode) IF(A) 40 IR(µA) 1.E+03 Pulse test : tp =500µs Tj=175 °C 35 1.E+02 30 Ta =100 °C 25 20 Tj=150 °C 1.E+01 Ta =150 °C Ta =25 °C 1.E+00 Ta =175 °C 15 10 Tj=25 °C 1.E-01 5 Ta =-40 °C VR(V) VF(V) 1.E-02 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 2.4 Figure 3: Peak forward current versus case temperature (per diode) 1400 T δ=0.1 120 δ=tp/T 100 150 200 250 300 350 400 450 500 550 600 650 Figure 4: Junction capacitance versus reverse voltage applied (typical values, per diode) IM (A) 140 50 tp 100 Cj (pF) F=1 MHz VO S C =30 mV RMS Tj=25 °C 1200 1000 δ=0.3 80 800 δ=0.5 60 600 400 40 δ=0.7 δ=1 200 20 VR(V) TC(°C) 0 0 0 25 50 75 100 125 150 0.1 175 10.0 100.0 1000.0 Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration 1.0 1.0 Zth(j-c) /Rth(j-c) 1.E+03 IFSM(A) 0.9 0.8 Ta =25 °C 0.7 0.6 Ta =125 °C 0.5 1.E+02 0.4 0.3 0.2 Single pulse 0.1 t p(s) 0.0 1.E-05 t p (s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 4/9 DocID029263 Rev 2 1.E-04 1.E-03 1.E-02 STPSC40065C-Y Characteristics Figure 7: Total capacitive charges versus reverse voltage applied (typical values, per diode) QCj (nC) 70 60 50 40 30 20 10 VR(V) 0 0 50 100 150 200 DocID029263 Rev 2 250 300 350 400 5/9 Package information 2 STPSC40065C-Y Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.    2.1 Epoxy meets UL 94,V0 Recommended torque value: 0.8 N·m Maximum torque value: 1 N·m TO-247 package information Figure 8: TO-247 package outline 6/9 DocID029263 Rev 2 STPSC40065C-Y Package information Table 6: TO-247 package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D(1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 5.45 18.50 0.215 0.220 0.728 ØP(2) 3.55 3.65 0.139 0.143 ØR 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 5.50 0.216 0.224 Notes: (1)Dimension (2)Resin D plus gate protusion does not exceed 20.5 mm thickness around the mounting hole is not less than 0.9 mm. DocID029263 Rev 2 7/9 Ordering information 3 STPSC40065C-Y Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STPSC40065CWY PSC40065CWY TO-247 4.43 g 30 Tube Revision history Table 8: Document revision history 8/9 Date Revision Changes 11-May-2016 1 First issue. 12-May-2016 2 Updated cover page footnote. DocID029263 Rev 2 STPSC40065C-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029263 Rev 2 9/9