STPSC40H12CWY

STPSC40H12C-Y Datasheet 40 A 1200 V power Schottky silicon carbide diode Features • • • • • • AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Robust high-voltage periphery PPAP capable Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant Applications • • • • OBC (On Board Battery chargers) PHEV - EV charging stations Resonant LLC topology PFC functions (Power Factor Corrector) Description The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Product status link STPSC40H12C-Y Product summary IF(AV) 2 x 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product label DS13623 - Rev 1 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC40H12C-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 °C , unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current Value Unit 1200 V 38 A Per diode 20 Per device 40 tp = 10 ms sinusoidal Tc = 25 °C 140 tp = 10 ms sinusoidal Tc = 150 °C 120 IF(AV) Average forward current IFSM Surge non repetitive forward current Tstg Storage temperature range -55 to +175 °C Operating junction temperature range -40 to +175 °C Tj Tc = 150 °C, DC current A A Table 2. Thermal resistance parameters Rth(j-c) Value Parameter Symbol Junction to case Typ. Max. Per diode 0.40 0.55 Per device 0.20 0.28 Unit °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 20 A Min. Typ. Max. - 10 120 - 60 800 - 1.35 1.50 - 1.75 2.25 Unit µA V 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.07 x IF(AV) + 0.059 x IF 2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS13623 - Rev 1 page 2/10 STPSC40H12C-Y Characteristics Table 4. Dynamic electrical characteristics (per diode) Symbol QCj (1) Cj 1. DS13623 - Rev 1 Parameter Total capacitive charge Total capacitance Test conditions Min. Typ. Max. Unit VR = 800 V - 129 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 1650 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 110 - pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 3/10 STPSC40H12C-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values, per diode) 40 IF(A) Figure 2. Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(µA) 1.E+02 Pulse test : tp = 500 µs 35 Ta = -40 °C 1.E+01 30 Tj = 150 °C 25 Ta = 25 °C 1.E+00 Ta = 150 °C Tj = 25 °C 20 1.E-01 15 10 1.E-02 5 VR (V) VF(V) 1.E-03 0 0.0 0.5 1.0 1.5 2.0 2.5 Figure 3. Peak forward current versus case temperature (per diode) 140 0 3.0 tp δ = tp/T 300 400 500 600 700 800 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 1600 1400 100 900 1000 1100 1200 Cj(pF) 1800 δ = 0.1 120 200 Figure 4. Junction capacitance versus reverse voltage applied (typical values, per diode) IM (A) T 100 1200 80 1000 δ = 0.3 60 800 δ = 0.5 600 40 400 δ = 0.7 δ= 1 20 200 Tc (°C) 0 25 50 75 100 125 150 175 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration 1.0 VR (V) 0 0 0.1 1 10 100 1000 10000 Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) Zth(j-c) /Rth(j-c) 1.E+03 IFSM (A) 0.9 0.8 0.7 Ta = 25 °C 0.6 0.5 0.4 Ta = 150 °C 0.3 0.2 Single pulse 0.1 t P(s) 0.0 1.E-05 DS13623 - Rev 1 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp (s) 1.E+02 1.E-05 1.E-04 1.E-03 1.E-02 page 4/10 STPSC40H12C-Y Characteristics (curves) Figure 7. Total capacitive charges versus reverse voltage applied (typical values, per diode) 140 Qcj(nC) 120 100 80 60 40 20 VR (V) 0 0 DS13623 - Rev 1 100 200 300 400 500 600 700 800 page 5/10 STPSC40H12C-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-247 package information • • • • Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 N·m Maximum torque value: 1.0 N·m Figure 8. TO-247 package outline DS13623 - Rev 1 page 6/10 STPSC40H12C-Y TO-247 package information Table 5. TO-247 package mechanical data Dimensions Millimeters Ref. Inches (for reference only) Min. Typ. Max. Min. Typ. Max. A 4.85 5.00 5.15 0.191 0.197 0.203 A1 2.20 2.60 0.086 A2 1.90 2.10 0.075 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D 19.85 20.00 20.15 0.781 0.787 0.793 E 15.45 15.60 15.75 0.608 0.614 0.620 E3 1.45 1.65 0.057 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 18.30 18.70 0.720 ØP 3.55 3.65 0.139 0.143 Q 5.65 5.95 0.222 0.234 S 5.30 5.70 0.209 DS13623 - Rev 1 2.00 5.45 18.50 5.50 0.102 0.078 0.083 0.065 0.215 0.728 0.216 0.220 0.737 0.224 page 7/10 STPSC40H12C-Y Ordering information 3 Ordering information Table 6. Ordering information DS13623 - Rev 1 Order code Marking Package Weight Base qty. Delivery mode STPSC40H12CWY SC40H12CWY TO-247 5.40 g 30 Tube page 8/10 STPSC40H12C-Y Revision history Table 7. Document revision history DS13623 - Rev 1 Date Revision 27-Jan-2021 1 Changes First issue. page 9/10 STPSC40H12C-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS13623 - Rev 1 page 10/10