STS3DPF30L

® STS3DPF30L DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STS3DPF30L s s V DSS 30 V R DS(on) < 0.16 Ω ID 3A s TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGMENT IN CELLULAR PHONES s DC-DC CONVERTER s SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Single Operation Drain Current (continuous) at T c = 1 00 o C Single Operation Drain Current (pulsed) Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Single Operation o o Value 30 30 ± 20 3 1.9 12 2 1.6 Unit V V V A A A W W IDM ( • ) P tot (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 1/5 STS3DPF30L THERMAL DATA R thj-amb Tj T stg *Thermal Resistance Junction-ambient Single Operation Dual Operation Maximum Operating Junction Temperature Storage Temperature 78 62.5 150 -55 to 150 o o C/W C/W o C o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A V GS = 0 Min. 30 1 10 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-body Leakage Current (V DS = 0 ) V GS = ± 2 0 V T c = 1 25 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 1 0 V V GS = 4 .5 V Test Conditions I D = 2 50 µ A I D = 1.5 A I D = 1.5 A 3 Min. 1 Typ. 1.6 0.145 0.18 Max. 2.5 0.16 0.19 Unit V Ω Ω A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz ID = 3 A V GS = 0 V Min. Typ. 3 510 170 55 Max. Unit S pF pF pF 2/5 STS3DPF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 1 5 V I D = 1.5 A V GS = 4 .5 V R G = 4 .7 Ω (Resistive Load, see fig. 3) V DD = 2 4 V I D = 3 A V GS = 4 .5 V Min. Typ. 14.5 37 5.5 1.7 1.8 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol t d(of f) tf Parameter Turn-off Delay Time Fall Time Test Conditions V DD = 1 5 V I D = 1.5 A V GS = 4 .5 V R G = 4 .7 Ω (Resistive Load, see fig. 3) Min. Typ. 88 23 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A VGS = 0 T.B.D I SD = 3 A di/dt = 100 A/ µ s V DD = 1 5 V T j = 1 50 o C (see test circuit, fig. 5) Test Conditions Min. Typ. Max. 3 12 1.2 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STS3DPF30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 4/5 STS3DPF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5