STT5NF20V

N-CHANNEL 20V - 0.030 Ω - 5A SOT23-6L 2.7V-DRIVE STripFET™ II POWER MOSFET TYPE STT5NF20V s s s STT5NF20V VDSS 20 V RDS(on) < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) ID 5A s TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 20 20 ± 12 5 3 20 1.6 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area. May 2002 . 1/8 STT5NF20V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max 78 -55 to 150 -55 to 150 °C/W °C °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 12V Min. 20 1 10 ±100 Typ. Max. Unit V µA µA nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.7 V ID = 250 µA ID = 2.5 A ID = 2.5 A Min. 0.6 0.030 0.037 0.040 0.045 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=15 V ID = 2.5 A Min. Typ. 9.5 460 200 50 Max. Unit S pF pF pF VDS = 15V f = 1 MHz, VGS = 0 2/8 STT5NF20V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 2.5 A VDD = 10 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) VDD= 16V ID= 5A VGS=4.5V (see test circuit, Figure 2) Min. Typ. 7 33 8.5 1.8 2.4 11.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf td(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 2.5 A VDD = 10 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) ID = 5 A Vclamp = 16 V RG = 4.7Ω, VGS = 4.5 V (Inductive Load, Figure 3) Min. Typ. 27 10 26 11 21 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A VGS = 0 26 13 1 Test Conditions Min. Typ. Max. 5 20 1.2 Unit A A V ns nC A di/dt = 100A/µs ISD = 5 A VDD = 10 V Tj = 150°C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STT5NF20V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STT5NF20V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STT5NF20V Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STT5NF20V SOT23-6L MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022 DIM. A A2 A1 b e1 e c L E D E1 7/8 STT5NF20V Information furnished is believed to be accurate and reliable. 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