STTH1L06RL

® STTH1L06/U/A TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM IR (max) Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s s 1A 600 V 75 µA 175 °C 1.05 V 80 ns DO-41 STTH1L06 SMB STTH1L06U s s Ultrafast switching Low reverse recovery current Reduces switching & conduction losses Low thermal resistance DESCRIPTION The STTH1L06/U/A, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current DO-41 SMA / SMB Tl = 120°C δ = 0.5 DO-41 TI = 135°C δ = 0.5 SMA TI = 145°C δ = 0.5 SMB SMA STTH1L06A Value 600 10 7 1 1 1 30 20 - 65 + 175 + 175 Unit V A A IFSM Tstg Tj Surge non repetitive forward current Storage temperature range tp = 10 ms Sinusoidal DO-41 tp = 10 ms Sinusoidal SMA / SMB A °C °C Maximum operating junction temperature July 2002 - Ed: 3C 1/8 STTH1L06/U/A THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter L = 10 mm DO-41 SMA SMB Rth (j-a) Junction to ambient (note 1) 2 Maximum 45 30 25 70 Unit °C/W L = 10 mm DO-41 Note 1: Rth(j-a) is measured with a copper area S = 5cm (see Fig 12) STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 600V Tj = 25°C Tj = 150°C IF = 1 A Tj = 25°C Tj = 150°C To evaluate the maximum conduction losses use the following equation : P = 0.89 x IF(AV) + 0.165 IF2(RMS) 0.85 10 Min. Typ. Max. 1 75 1.3 1.05 V Unit µA VF DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tests conditions IF = 1 A dIF/dt = - 50 A/µs VR = 30V IF = 1 A dIF/dt = 100 A/µs VFR = 3.5V IF = 1A dIF/dt = 100 A/µs Tj = 25°C Tj = 25°C Tj = 25°C Min. Typ. 55 Max. 80 50 10 Unit ns ns V 2/7 STTH1L06/U/A Fig. 1: Conduction losses versus average current. P(W) 1.50 δ = 0.05 δ = 0.1 δ = 0.2 Fig. 2: Forward voltage drop versus forward current. IFM(A) 100.0 δ = 0.5 Tj=150°C (Maximum values) 1.25 δ=1 1.00 10.0 Tj=150°C (Typical values) 0.75 Tj=25°C (Maximum values) 0.50 T 1.0 0.25 IF(av)(A) 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 δ=tp/T 1.0 1.1 tp VFM(V) 0.1 1.2 1.3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Fig. 3-1: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, Leads = 10mm) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 δ = 0.5 DO-41 Lleads = 10mm Fig. 3-2: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, S = 1cm²) Zth(j-a)/Rth(j-a) 1.0 SMB 0.9 0.8 0.7 0.6 0.5 0.4 δ = 0.5 0.5 0.4 0.3 0.2 0.1 0.0 1.E-01 1.E+00 1.E+01 δ = 0.2 δ = 0.1 Single pulse 0.3 T δ = 0.2 δ = 0.1 0.2 0.1 tp T tp(s) δ=tp/T 1.E+02 Single pulse tp(s) 1.E+00 1.E+01 0.0 1.E+03 δ=tp/T 1.E+02 tp 1.E-01 1.E+03 Fig. 3-3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse δ = 0.2 δ = 0.1 δ = 0.5 SMA Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 2.5 2.3 2.0 IF=IF(av) VR=400V Tj=125°C IF=2 x IF(av) 1.8 IF=0.5 x IF(av) 1.5 1.3 1.0 0.8 T IF=0.25 x IF(av) 0.5 tp tp(s) 1.E+00 1.E+01 0.0 1.E-01 δ=tp/T 1.E+02 0.3 0.0 dIF/dt(A/µs) 0 5 10 15 20 25 30 35 40 45 50 1.E+03 3/8 STTH1L06/U/A Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 35 40 45 50 IF=2 x IF(av) IF=IF(av) IF=0.5 x IF(av) VR=400V Tj=125°C Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 220 200 180 160 140 120 100 80 60 40 IF=0.5 x IF(av) IF=IF(av) VR=400V Tj=125°C IF=2 x IF(av) dIF/dt(A/µs) 20 0 0 5 10 15 dIF/dt(A/µs) 20 25 30 35 40 45 50 Fig. 7: Softness factor versus dIF/dt (typical values). S factor 2.0 1.8 1.6 1.4 1.2 1.0 Fig. 8: Relative variations of dynamic parameters versus junction temperature. 1.25 S factor 1.00 IRM 0.75 QRR 0.50 0.8 0.6 0.25 0.4 0.2 0.0 0 5 10 15 20 25 30 35 40 45 50 dIF/dt(A/µs) IF=IF(av) VR=400V Tj=125°C Tj(°C) 0.00 25 50 75 IF=IF(av) VR=400V Reference: Tj=125°C 100 125 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 25 IF=IF(av) Tj=125°C Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 200 180 160 140 IF=IF(av) VFR=1.1 x VF max. Tj=125°C 20 15 120 100 10 80 60 5 40 20 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 0 4/8 STTH1L06/U/A Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25°C Fig. 12-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a)(°C/W) 110 100 90 80 70 DO-41 Lleads=10mm 10 60 50 40 30 20 SMB VR(V) 1 1 10 100 1000 10 0 0 1 2 3 4 S(cm²) 5 6 7 8 9 10 Fig. 12-2: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a)(°C/W) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 SMA S(cm²) 2.5 3.0 3.5 4.0 4.5 5.0 5/8 STTH1L06/U/A PACKAGE MECHANICAL DATA SMA DIMENSIONS E1 REF. Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L FOOTPRINT 1.65 1.45 2.40 1.45 6/8 STTH1L06/U/A PACKAGE MECHANICAL DATA SMB DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L FOOTPRINT 2.3 1.52 2.75 1.52 7/8 STTH1L06/U/A PACKAGE MECHANICAL DATA DO-41 DIMENSIONS C A C OB / REF. Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A B OD / OD / 4.07 2.04 28 0.712 C D 0.863 0.028 0.034 Ordering code STTH1L06 STTH1L06RL STTH1L06U STTH1L06A s s Marking STTH1L06 STTH1L06 BL6 HL6 Package DO-41 DO-41 SMB SMA Weight 0.34 g 0.34 g 0.11 g 0.068 g Base qty 2000 5000 2500 5000 Delivery mode Ammopack Tape & reel Tape & reel Tape & reel s Epoxy meets UL 94,V0 Band indicated cathode Bending method: Application note AN1471 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8