STTH806G

STTH806 Turbo 2 ultrafast - high voltage rectifier Main product characteristics A K K IF(AV) 8A VRRM 600 V Tj 175° C VF (typ) 1.1 V trr (max) 35 ns A NC D2PAK STTH806G Features and benefits A ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switching losses ■ Insulated package TO-220AC Ins – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF A K K TO-220AC STTH806D TO-220AC Ins STTH806DIRG Order codes Part Number Marking STTH806G STTH806G Description STTH806G-TR STTH806G The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. STTH806D STTH806D STTH806DIRG STTH806DI Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Symbol VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 600 V TO-220AC, D2PAK 30 A TO-220 Ins 24 A 8 A 8 A 90 A -65 to + 175 °C 175 °C Tc = 140° C TO-220AC, Tc = 120° C TO-220 Ins IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj 1. Parameter Maximum operating junction dP 1 tot --------------- < -------------------------R dT th ( j – a ) j August 2006 D2PAK temperature(1) condition to avoid thermal runaway for a diode on its own heatsink Rev 2 1/9 www.st.com Characteristics STTH806 1 Characteristics Table 2. Thermal parameters Symbol Parameter Value 2 Rth(j-c) Table 3. Symbol TO-220AC, D PAK Junction to case TO-220AC Ins Unit 2.5 ° C/W 4 Static electrical characteristics Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25° C Tj = 150° C Tj = 25° C Tj = 150° C Min. Typ Max. 8 VR = VRRM 20 200 1.85 IF = 8 A 1.10 1.40 Unit µA V 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.07 x IF(AV) + 0.041 IF2(RMS) Table 4. Symbol trr IRM tfr VFP 2/9 Dynamic characteristics Parameter Reverse recovery time Test conditions Min. Typ IF = 0.5 A, Irr = 0.25 A, IR = 1 A, Tj = 25° C Max. Unit 35 ns IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C 40 55 Reverse recovery current IF = 8 A, dIF/dt = -100 A/µs, VR = 400 V, Tj = 25° C 4.5 6.5 Forward recovery time dIF/dt = 100 A/µs IF = 8 A VFR = 1.1 x VFmax, Tj = 25° C Forward recovery voltage dIF/dt = 100 A/µs IF = 8 A VFR = 1.1 x VFmax, Tj = 25° C 200 3.5 ns V STTH806 Characteristics Figure 1. 15.0 Conduction losses versus average current Figure 2. PF(AV)(W) δ = 0.05 δ = 0.1 IFM(A) 100 δ = 0.2 δ = 0.5 Forward voltage drop versus forward current 90 12.5 80 δ=1 Tj=150°C (maximum values) 70 10.0 60 7.5 Tj=150°C (typical values) 50 40 5.0 20 2.5 IF(AV)(A) δ=tp/T 10 tp VFM(V) 0 0.0 0 1 Figure 3. 1.0 Tj=25°C (maximum values) 30 T 2 3 4 5 6 7 8 9 0.0 10 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 14 VR=400V Tj=125°C Single pulse 0.9 0.5 12 IF=2 x IF(AV) IF=IF(AV) 0.8 IF=0.5 x IF(AV) 10 0.7 IF=0.25 x IF(AV) 0.6 8 0.5 6 0.4 0.3 4 0.2 2 0.1 dIF/dt(A/µs) tp(s) 0.0 0 1.E-03 1.E-02 Figure 5. 300 1.E-01 1.E+00 Reverse recovery time versus dIF/dt (typical values) 0 50 Figure 6. trr(ns) 450 VR=400V Tj=125°C 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) Qrr(nC) VR=400V Tj=125°C 400 IF=2 x IF(AV) 250 350 IF=IF(AV) IF=2 x IF(AV) 200 300 IF=IF(AV) 150 IF=0.5 x IF(AV) 250 IF=0.5 x IF(AV) 200 100 150 50 100 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 dIF/dt(A/µs) 50 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 3/9 Characteristics Figure 7. 2.00 STTH806 Softness factor versus dIF/dt (typical values) Figure 8. S factor Relative variations of dynamic parameters versus junction temperature 2.50 IF ≤ 2 x IF(AV) VR = 400 V Tj = 125° C 1.80 1.60 S factor 2.00 1.40 1.75 1.20 1.50 1.25 1.00 1.00 0.80 0.75 0.60 IRM QRR 0.50 0.40 0.25 0.20 dIF/dt(A/µs) Tj(°C) 0.00 0.00 25 0 50 Figure 9. 100 150 200 250 300 350 400 450 Transient peak forward voltage versus dIF/dt (typical values) 75 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) 200 IF=IF(AV) Tj=125°C 12 50 500 VFP(V) 14 IF=IF(AV) VR=400V Reference: Tj=125°C 2.25 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 180 160 10 140 120 8 100 6 80 4 60 40 2 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 100 200 300 400 Figure 11. Junction capacitance versus reverse voltage applied (typical values) 100 0 500 100 200 300 400 500 Figure 12. Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, eCU = 35 µm) C(pF) 80 Rth(j-a)(°C/W) D²PAK F=1MHz VOSC=30mVRMS Tj=25°C 70 60 50 40 10 30 20 10 VR(V) S(Cu)(cm²) 0 1 1 4/9 10 100 1000 0 5 10 15 20 25 30 35 40 STTH806 2 Package mechanical data Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.80 Nm Maximum torque value: 1.0 Nm Table 5. D2PAK Dimensions Dimensions Ref. Millimeters Inches Min. Max Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R V2 0.40 typ. 0° 8° 0.016 typ. 0° 8° Figure 13. D2PAK Footprint dimensions (in mm) 16.90 10.30 5.08 1.30 8.90 3.70 5/9 Package mechanical data Table 6. STTH806 TO-220AC Dimensions Dimensions Ref. A H2 ØI C L5 L7 L6 L2 F1 Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 L4 F M E 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. I 6/9 Inches D L9 G Millimeters 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 STTH806 Package mechanical data Table 7. TO-220AC Ins Dimensions Dimensions Ref. Millimeters Min. A Typ. 15.20 a1 Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 C B ØI b2 L F A a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 I4 c2 a1 l2 a2 M b1 e c1 M 2.60 0.102 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information 3 4 8/9 STTH806 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH806G STTH806G D2PAK 1.48 g 50 Tube STTH806G-TR STTH806G D2 1.48 g 1000 Tape and reel STTH806D STTH806D TO-220AC 1.90 g 50 Tube STTH806DIRG STTH806DI TO-220AC Ins 2.30 g 50 Tube PAK Revision history Date Revision Description of Changes 18-May-2006 1 First issue. 10-Aug-2006 2 Changed part number STTH806DI to STTH806DIRG. STTH806 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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