STTH806DTI

® STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (typ) IRM typ.) trr (max) FEATURES AND BENEFITS ■ 8A 600 V 150°C 2.24 V 4A 13 ns 1 2 1 2 ■ ■ ■ ■ ■ Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions Designed for high dI/dt operation. Hyperfast recovery current to compete with SIC devices. Allows downsizing of mosfet and heatsinks Internal ceramic insulated devices with equal thermal conditions for both 300V diodes Insulation (2500VRMS) allows placement on same heatsink as MOSFET and flexible heatsinking on common or separate heatsink Static and dynamic equilibrium of internal diodes are warranted by design Package capacitance: C=7pF Insulated TO-220AC DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj RMS forward voltage Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10ms sinusoidal δ = 0.15 Tc = 130°C Parameter Repetitive peak reverse voltage Value 600 14 180 17 -65 to + 150 + 150 Unit V A A A °C °C Order Codes Part Number STTH806DTI Marking STTH806DTI June 2005 REV. 4 1/6 STTH806DTI THERMAL RESISTANCE Symbol Rth(j-c) Junction to case Parameter Value (max). 2.6 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Test conditions VR = VRRM 15 IF = 8A 1.95 Min. Typ Max. 10 100 3.6 2.4 V Unit µA Reverse leakage current Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 150°C Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.7 x IF(AV) + 0.087 IF (RMS) 2 DYNAMIC CHARACTERISTICS Symbol trr IRM S Qrr Parameter Reverse recovery time Reverse recovery current Reverse recovery softness factor Reverse recovery charges Tj = 25°C Test conditions IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = -50 A/µs VR =30V Tj = 125°C IF = 8A VR = 400V dIF/dt = -200 A/µs 4 0.4 50 Min. Typ Max. Unit 13 30 5.5 A nC ns TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Forward recovery time Forward recovery voltage Tj = 25°C Tj = 25°C Test conditions IF = 8A dIF/dt = 100 A/µs VFR = 1.1 x VFmax IF = 8A dIF/dt = 100 A/µs Min. Typ Max. Unit 200 7 ns V 2/6 ® STTH806DTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 100 Tj=125°C (maximum values) P(W) 30 25 20 δ=1 Tj=125°C (typical values) 15 10 Tj=25°C (maximum values) 10 T 5 IF(AV)(A) 0 0 1 2 3 4 5 6 7 δ=tp/T 8 9 tp 1 10 VFM(V) 0 1 2 3 4 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 Fig. 4: P eak reverse recovery current versus dI F /dt (typical values). IRM(A) 9 8 VR=400V Tj=125°C IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 0.8 δ = 0.5 7 6 0.6 5 4 δ = 0.2 δ = 0.1 0.4 3 T 2 0.2 Single pulse tp(s) 0.0 1E-3 1E-2 1E-1 δ=tp/T tp 1E+0 1 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 60 VR=400V Tj=125°C Fig. 6: Reverse recovery charges versus dIF/dt (typical values). Qrr(nC) 140 VR=400V Tj=125°C 50 IF=2 x IF(AV) IF=IF(AV) 120 100 IF=2 x IF(AV) 40 IF=IF(AV) 80 IF=0.5 x IF(AV) IF=0.5 x IF(AV) 30 60 20 40 10 20 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 0 100 dIF/dt(A/µs) 200 300 400 500 ® 3/6 STTH806DTI Fig. 7: Softness factor versus dIF/dt (typical values). S 0.6 0.5 0.4 0.3 0.2 0.1 IF