STTH806TTI

STTH806TTI ® TURBOSWITCH™ Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) 8A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4A 1 2 3 1 ■ ■ ■ ■ ■ 3 Insulated TO-220AB FEATURES AND BENEFITS ■ 2 ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS. DESIGNED FOR HIGH DI/DT OPERATION. ULTRA-FAST RECOVERY CURRENT TO COMPETE WITH GaAs DEVICES. SIZE DIMINUTION OF MOSFET AND HEATSINKS ALLOWED. INTERNAL CERAMIC INSULATED PACKAGE ALLOWS FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT VOLTAGE BALANCE NETWORK. INSULATED VERSION: : Insulated voltage = 2500 V(RMS) Capacitance = 7 pF DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current IFSM Surge non repetitive forward current Tstg Storage temperature range Tj tp = 10 ms sinusoidal Maximum operating junction temperature Value 600 Unit V 14 A 80 A -65 +150 °C + 150 °C TM: TURBOSWITCH is a trademark of STMicroelectronics February 2003 - Ed: 4B 1/5 STTH806TTI THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit Rth (j-c) Junction to case thermal resistance Per diode 5 °C/W Coupling 0.2 Junction to case thermal resistance Total 2.6 Conduction power dissipation for both diodes IF(AV) = 8 A Tc = 80°C Rth (c) Rth (j-c) P1 δ = 0.5 27 W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter IR * Reverse leakage current VR = VRRM Forward voltage drop IF = 8 A VF ** Tests Conditions Min. Typ. Tj = 25°C 15 Tj = 125°C Max. Unit 10 µA 100 3.6 Tj = 25°C Tj = 125°C 2.1 2.6 Typ. Max. V Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1.8 x IF(AV) + 0.1 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests Conditions IF = 0.5 A IF = 1 A IRM Irr = 0.25 A dIF/dt = - 50 A/µs IR = 1 A Min. 13 Tj = 25°C ns 30 VR = 30 V VR = 400 V IF = 8 A dIF/dt = -200 A/µs Unit 4 Tj = 125°C Sfactor 5.5 0.4 A - TURN-ON SWITCHING CHARACTERISTICS Symbol 2/5 Tests Conditions Min. Typ. Max. Unit tfr IF = 8 A dIF/dt = 100 A/µs, measured at 1.1 x VF max Tj = 25°C 200 ns VFP IF = 8 A dIF/dt = 100 A/µs Tj = 25°C 7 V STTH806TTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P1(W) 30 δ = 0.2 δ = 0.1 δ = 0.05 25 100 δ = 0.5 Tj=125°C Maximum values δ=1 20 Tj=125°C Typical values 15 10 T 5 δ=tp/T IF(av) (A) 0 Tj=25°C Maximum values 10 0 1 2 3 4 5 6 7 VFM(V) tp 8 9 1 10 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 1 2 Zth(j-c)/Rth(j-c) 0.8 8 VR=400V Tj=125°C δ = 0.5 7 8 IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) 4 δ = 0.1 T 2 Single pulse 0.0 1E-3 6 6 δ = 0.2 0.2 5 IRM(A) 10 0.4 4 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). 1.0 0.6 3 tp(s) 1E-2 δ=tp/T 1E-1 dIF/dt(A/µs) tp 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse charges versus dIF/dt (90% confidence). 140 Qrr(nC) 80 VR=400V Tj=125°C 70 120 VR=400V Tj=125°C IF=2*IF(av) 100 60 50 IF=IF(av) IF=2*IF(av) 80 40 IF=IF(av) IF=0.5*IF(av) 60 30 40 20 IF=0.5*IF(av) 10 0 20 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH806TTI Fig. 7: values). Softness factor versus dIF/dt (typical S factor 0.6 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/µs) 0.0 0 50 IF