STTH506TTI

STTH506TTI ® Tandem 600V HYPERFAST RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) 5A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 3.6 A 1 2 3 1 Insulated TO-220AB ■ DESCRIPTION e t le ) s ( ct ) s t( o r P The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ■ ■ 3 c u d FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT NEED FOR VOLTAGE BALANCE NETWORK Package Capacitance: C=7pF ■ 2 o s b O - u d o ■ r P e ■ t e l o ABSOLUTE RATINGS (limiting values, for both diodes) s b O Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 14 A 60 A -65 +150 °C + 150 °C IFSM Surge non repetitive forward current Tstg Storage temperature range Tj tp = 10 ms sinusoidal Maximum operating junction temperature TM: TURBOSWITCH is a trademark of STMicroelectronics June 2003 - Ed: 1A 1/5 STTH506TTI THERMAL AND POWER DATA Symbol Parameter Rth (j-c) Junction to case thermal resistance Conduction power dissipation for both diodes P Test conditions Value Unit Total 3.0 °C/W IF(AV) = 5 A δ = 0.5 Tc = 100°C 17 W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter Tests Conditions IR * Reverse leakage current VR = VRRM Min. Tj = 25°C 8 Tj = 125°C VF ** Forward voltage drop IF = 5 A 2.1 trr Reverse recovery time IF = 0.5 A IR = 1 A o s b O - Irr = 0.25 A Reverse recovery current Reverse recovery softness factor S o r P e ) s ( ct VR = 400 V IF = 5 A dIF/dt = -200 A/µs µA 2.6 V ) s t( o r P Min. Tj = 25°C Typ. Max. 12 Unit ns 25 IF = 1 A dIF/dt = - 50 A/µs VR = 30 V IRM 6 c u d e t le DYNAMIC CHARACTERISTICS (for both diodes) Tests Conditions Unit 3.6 Pulse test : * tp = 100 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1.8 x IF(AV) + 0.16 IF2(RMS) Parameter Max. 60 Tj = 25°C Tj = 125°C Symbol Typ. 3.8 Tj = 125°C du 4.5 0.4 A - TURN-ON SWITCHING CHARACTERISTICS (for both diodes) t e l o Symbol Parameter tfr Forward recovery time IF = 5 A dIF/dt = 100 A/µs VFR = 1.1 x VF max Transient peak forward recovery voltage IF = 5 A dIF/dt = 100 A/µs s b O VFP 2/5 Tests Conditions Min. Typ. Max. Unit Tj = 25°C 100 ns Tj = 25°C 7 V STTH506TTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 20 18 100 δ = 0.2 δ = 0.1 90 δ = 0.5 16 80 δ = 0.05 14 Tj=125°C (maximum values) 70 12 60 δ=1 10 50 8 40 6 Tj=125°C (typical values) Tj=25°C (maximum values) 30 T 4 20 2 IF(AV)(A) 0 1 2 3 10 δ=tp/T 0 4 5 VFM(V) tp 0 6 7 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 1 9 0.9 8 0.8 e t le δ = 0.2 0.3 δ = 0.1 T IF=IF(AV) o s b O 2 Single pulse 0.1 (s) δ=tp/T tp(s) 0.0 1.E-03 1.E-02 tp ct 1.E-01 u d o 1 1.E+00 r P e t e l o trr(ns) 45 bs dIF/dt(A/µs) 0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 100 VR=400V Tj=125°C IF=2 x IF(AV) VR=400V Tj=125°C 90 IF=2 x IF(AV) 80 IF=IF(AV) O 30 ) s t( 3 0.2 35 8 IF=0.25 x IF(AV) 4 0.4 7 IF=0.5 x IF(AV) 5 0.5 6 IF=2 x IF(AV) 6 δ = 0.5 5 o r P VR=400V Tj=125°C 7 0.7 4 c u d IRM(A) 1.0 0.6 3 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). Zth(j-c)/Rth(j-c) 40 2 IF=0.5 x IF(AV) 70 IF=IF(AV) 60 IF=0.5 x IF(AV) 25 50 20 40 15 30 10 20 5 10 dIF/dt(A/µs) 0 50 100 150 200 250 300 dIF/dt(A/µs) 0 0 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH506TTI Fig. 7: Reverse recovery softness factor versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). S 2.50 0.60 IF=IF(AV) VR=400V Tj=125°C IF=IF(AV) VR=400V Reference: Tj=125°C 2.25 2.00 0.50 S 1.75 1.50 1.25 0.40 1.00 0.75 IRM 0.50 0.30 0.25 dIF/dt(A/µs) Tj(°C) 0.00 0.20 25 0 50 100 150 200 250 300 350 400 450 50 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). 100 125 c u d tfr(ns) 200 20 IF=IF(AV) Tj=125°C 180 16 160 14 140 12 120 e t le o s b O 100 10 80 8 ) s t( Fig. 10: Forward recovery time versus dIF/dt (90% confidence). VFP(V) 18 75 500 o r P IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 60 6 40 4 2 (s) dIF/dt(A/µs) 0 0 50 100 150 200 250 t c u 300 350 400 20 500 d o r P e Fig. 11: Junction capacitance versus reverse voltage applied (typical values). t e l o C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25°C s b O 10 VR(V) 1 1 4/5 10 100 dIF/dt(A/µs) 0 450 1000 0 100 200 300 400 500 STTH506TTI PACKAGE MECHANICAL DATA TO-220AB B C DIMENSIONS b2 REF. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e ■ ■ ■ ■ Marking Package STTH506TTI STTH506TTI TO-220AB ) s ( ct Inches Min. Typ. Max. Min. Typ. Max. 15.20 15.90 0.598 0.625 3.50 4.20 0.137 0.165 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 16.40 0.646 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 c u d e t le o s b O - Ordering code Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Millimeters ) s t( o r P Weight Base qty Delivery mode 2.3 g. 50 Tube u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5