STU10NM65N

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features Type STD10NM65N STF10NM65N STP10NM65N STU10NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. TO-220FP DPAK Application ■ Internal schematic diagram Switching applications Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 10NM65N 10NM65N 10NM65N 10NM65N Package DPAK TO-220FP TO-220 IPAK Packaging Tape & reel Tube Tube Tube Order codes STD10NM65N STF10NM65N STP10NM65N STU10NM65N October 2008 Rev 3 1/17 www.st.com 17 Contents STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 7 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220/IPAK TO-220FP DPAK 650 ± 25 9 5.7 36 90 15 --55 to 150 150 2500 9(1) 5.7(1) 36(1) 25 Unit VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25 °C) Storage temperature Max. operating junction temperature V V A A A W V/ns V °C °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 9 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-pcb Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose -62.5 TO-220 IPAK 1.38 -100 300 50 -DPAK TO-220FP 5 -62.5 Unit °C/W °C/W °C/W °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD= 50 V) Max value 2.5 200 Unit A mJ 3/17 Electrical characteristics STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt (1) IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD= 520 V, ID= 9 A, VGS= 10 V VDS = max rating VDS = max rating, @125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.5 A 2 3 0.43 Min. 650 25 1 100 ±100 4 0.48 Typ. Max. Unit V V/ns µA µA nA V Ω 1. Characteristics value at turn off on inductive load Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS=15 V, ID = 4.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 7.5 850 53 4 90 25 14 4 Max. Unit S pF pF pF VGS = 0, VDS = 0 to 520 V VDD = 520 V, ID = 9 A, VGS = 10 V, (see Figure 19) pF nC nC nC 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 325 V, ID = 4.5 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Min Typ 12 8 50 20 Max Unit ns ns ns ns Table 8. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, VGS = 0 ISD = 9 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) ISD = 9 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) 330 3 19 430 4 19 Test conditions Min Typ Max 9 36 1.3 Unit A A V ns µC A ns µC A VSD (2) trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 5/17 Electrical characteristics STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK/IPAK Figure 7. Thermal impedance for DPAK/IPAK 6/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate source voltage Figure 13. Capacitance variations 7/17 Electrical characteristics STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 15. Normalized on resistance vs temperature Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Test circuit 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/17 Package mechanical data STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/17 Package mechanical data STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/17 G STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 13/17 Package mechanical data STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 14/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Package mechanical data 5 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 15/17 Revision history STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 6 Revision history Table 9. Date 26-Oct-2007 07-Feb-2008 14-Oct-2008 Document revision history Revision 1 2 3 Initial release. Document status promoted from preliminary data to datasheet. Table 4: Avalanche characteristics has been corrected. Changes 16/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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