STW13NK100Z

STW11NK100Z STW13NK100Z N-channel 1000V - 0.56Ω - 13A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features Type STW13NK100Z ■ ■ ■ ■ ■ VDSS (@Tjmax) 1000 V RDS(on) ID PW < 0.70 Ω 13 A 350W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number STW13NK100Z Marking W13NK100Z Package TO-247 Packaging Tube August 2006 Rev 5 1/14 www.st.com 14 Contents STW13NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW13NK100Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM(1) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1,5KΩ) Peak diode recovery voltage slope Operating junction temperature Storage temperature Value 1000 1000 ± 30 13 8.2 52 350 2.7 6000 4 -55 to 150 Unit V V V A A A W W/°C V V/ns °C VESD (G-S) dv/dt TJ Tstg (2) 1. Pulse width limited by safe operating area 2. ISD ≤8.3 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.36 50 300 Unit °C/W °C/W °C Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 13 700 Unit A mJ 3/14 Electrical ratings STW13NK100Z Table 4. Symbol BVGSO Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown voltage Igs=± 1mA (Open Drain) 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 STW13NK100Z Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125°C Min. 1000 1 10 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 150 µA VGS = 10V, ID = 6.5 A 3 3.75 0.56 4.5 0.70 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Test conditions Min. Typ. 14 6000 455 100 227 45 35 145 45 190 30 100 266 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward transconductance VDS =15V, ID = 6.5 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 800V VDD=500 V, ID= 7A, RG=4.7Ω, VGS=10V (see Figure 16) VDD=800V, ID = 13A VGS =10V 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/14 Electrical characteristics STW13NK100Z Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=8.3A, VGS=0 ISD=13 A, di/dt = 100A/µs, VDD=100 V, Tj=25°C (see Figure 18) ISD=13 A, di/dt = 100A/µs, VDD=100V, Tj=150°C (see Figure 18) 820 12.7 31 1050 17.8 34 Test conditions Min Typ. Max 13 52 1.6 Unit A A V ns µC A ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/14 STW13NK100Z Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics 7/14 Electrical characteristics Figure 5. Transconductance Figure 6. STW13NK100Z Static drain-source on resistance Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature 8/14 STW13NK100Z Figure 11. Source-drain diode forward characteristics Electrical characteristics Figure 12. Normalized BVDSS vs temperature Figure 13. Maximum avalanche energy vs temperature 9/14 Test circuit STW13NK100Z 3 Test circuit Figure 15. Unclamped Inductive waveform Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load switching and diode recovery times 10/14 STW13NK100Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STW13NK100Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 12/14 STW13NK100Z Revision history 5 Revision history Table 8. Date 22-Jun-2004 09-Sep-2004 28-Jan-2005 18-Sep-2005 01-Aug-2006 Revision history Revision 1 2 3 4 5 Target document Preliminary document Complete version with curves Figure 12 changed New template, no content change Changes 13/14 STW13NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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