STW20NM60

STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 20 A 20 A TO-220 TO-220FP VDSS 600 V 600 V 600 V 600 V 600 V 3 1 2 3 1 2 s TYPICAL RDS(on) = 0.25 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 2 1 3 1 TO-247 I²PAK 3 12 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. D²PAK Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STP20NM60 STP20NM60FP STB20NM60T4 STB20NM60-1 STW20NM60 MARKING P20NM60 P20NM60FP B20NM60 B20NM60 W20NM60 PACKAGE TO-220 TO-220FP D²PAK I²PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE TUBE Rev.2 February 2005 1/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220/D²PAK/ I²PAK/TO-247 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --65 to 150 150 20 12.6 80 192 1.2 15 2500 600 600 ±30 20 (*) 12.6 (*) 80 (*) 45 0.36 TO-220FP V V V A A A W W/°C V/ns V °C °C Unit ( ) Pulse width limited by safe operating area (1) I SD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/D²PAK/ I²PAK/TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.65 62.5 300 TO-220FP 2.8 Unit °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max. Value 10 650 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 Min. 600 1 10 ±100 3 4 0.25 5 0.29 Typ. Max. Unit V µA µA µA V Ω VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C Gate-body Leakage Current (VDS = 0) Static Drain-source On Resistance VGS = ± 30V Gate Threshold Voltage VDS = VGS, ID = 250 µA VGS = 10V, ID = 10 A 2/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (3) td(on) tr td(off) tf tc Qg Qgs Qgd Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Cross-over Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance Test Conditions VDS > ID(on) x R DS(on)max, ID = 10 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 11 1500 350 35 215 25 20 6 11 21 39 10 20 1.6 54 Max. Unit S pF pF pF pF ns ns ns ns ns nC nC nC Ω VGS = 0V, VDS = 0V to 400 V VDD = 200 V, ID = 10 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480 V, ID = 20 A (See test circuit, Figure 5) VDD = 400 V, ID = 20 A, VGS = 10V f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD =20 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD =20 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 390 5 25 510 6.5 26 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns µC A ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 3: Safe Operating Area for TO-220/ D²PAK/I²PAK Figure 6: Thermal Impedance for TO-220/ D²PAK/I²PAK Figure 4: Safe Operating Area for TO-220FP Figure 7: Thermal Impedance for TO-220FP Figure 5: Safe Operating Area for TO-247 Figure 8: Thermal Impedance for TO-247 4/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 9: Output Characteristics Figure 12: Gate Charge vs Gate-source Voltage Figure 10: Transconductance Figure 13: Normalized Gate Threshold Voltage vs Temp. Figure 11: Transfer Characteristics Figure 14: Static Drain-source On Resistance 5/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 15: Capacitance Variations Figure 17: Source-drain Diode Forward Characteristics Figure 16: Normalized On Resistance vs Temperature 6/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 8/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 E L2 L5 123 L4 G 9/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-263 (D 2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b2 c c2 D D1 E e H L L1 L2 L4 V2 13.10 1.30 1.15 1.27 2.70 0° 4.32 0.00 0.71 1.15 0.46 1.22 8.89 8.01 10.04 2.54 13.70 1.70 1.39 1.77 3.10 8° 0.515 0.051 0.045 0.050 0.106 0° 10.28 9.02 TYP MAX. 4.57 0.25 0.91 1.40 0.61 1.40 9.40 MIN. 0.178 0.00 0.028 0.045 0.018 0.048 0.350 0.315 0.395 0.010 0.540 0.067 0.054 0.069 0.122 8° 0.404 0.355 TYP. MAX. 0.180 0.009 0.350 0.055 0.024 0.055 0.370 inch 10/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 11/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 13/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Table 9: Revision History Date 26-Jul-2004 17-Feb-2005 Revision 1 2 Description of Changes First Release Insert the TO-247 package 14/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 15/15