STB28NM50N, STF28NM50N
STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247
MDmesh™ II Power MOSFET
Features
Order codes
RDS(on)
max.
VDSS
(@Tjmax)
ID
3
3
STB28NM50N
STF28NM50N
STP28NM50N
1
2
1
TO-220
TO-220FP
550 V
< 0.158 Ω
2
21 A
STW28NM50N
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
3
2
1
1
D²PAK
TO-247
3
Applications
■
Figure 1.
Switching applications
Internal schematic diagram
Description
$
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
D²PAK
Tape and reel
STB28NM50N
STF28NM50N
TO-220FP
28NM50N
STP28NM50N
TO-220
STW28NM50N
TO-247
June 2011
Doc ID 17432 Rev 2
Tube
1/21
www.st.com
21
Contents
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
.............................................. 9
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
D²PAK
TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at
TC = 25 °C
21
21 (1)
A
ID
Drain current (continuous) at
TC = 100 °C
13
13 (1)
A
IDM (2)
Drain current (pulsed)
84
84 (1)
A
PTOT
Total dissipation at TC = 25 °C
150
35
W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
2500
V
dv/dt (3)
Peak diode recovery voltage slope
Tstg
Tj
Storage temperature
15
V/ns
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient
max
Rthj-pcb(1)
Thermal resistance junction-pcb max
Tl
Maximum lead temperature for
soldering purpose
D²PAK
TO-247 TO-220FP
0.83
62.5
50
30
3.6
°C/W
62.5
°C/W
°C/W
300
300
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
7.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
300
mJ
Doc ID 17432 Rev 2
3/21
Electrical characteristics
2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 10.5 A
V(BR)DSS
Table 6.
Symbol
Ciss
Coss
Crss
Coss(eq)(1)
Qg
Qgs
Qgd
Rg
500
2
V
3
Ω
0.135 0.158
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
-
pF
pF
pF
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
1735
122
4.3
Equivalent output
capacitance time related
VGS = 0, VDS = 0 to 50 V
-
418
-
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 21 A,
VGS = 10 V,
(see Figure 19)
-
50
9.5
25
-
nC
nC
nC
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-
2.7
-
Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
4/21
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
trr
Qrr
IRRM
Min.
Typ.
-
13.6
19
62
52
Max. Unit
-
ns
ns
ns
ns
Source drain diode
Parameter
IRRM
Test conditions
VDD = 250 V, ID = 10.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Min.
Typ. Max. Unit
-
21
84
A
A
ISD = 21 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 400 V
(see Figure 23)
-
326
5
30
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 400 V, Tj = 150 °C
(see Figure 23)
-
376
6.2
33.2
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17432 Rev 2
5/21
Electrical characteristics
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
O
N
/P
,IM ERAT
ITE ION
DB IN
YM THIS
AX ARE
2
AI
$3
S
)$
!
Thermal impedance for TO-220,
D²PAK
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-247
!-V
Figure 3.
S
S
MS
MS
4J #
4C #
3INGLE
PULSE
Figure 4.
6$36
Safe operating area for TO-220FP
!-V
N
O
$3
)$
!
/P
,IM ERAT
ITE ION
DB IN
YM THIS
AX ARE
2
A
IS
S
S
MS
4J #
4C #
MS
3INGLE
PULSE
Figure 6.
6$36
Safe operating area for TO-247
!-V
)$
!
ON
S
S
$3
/P
,IM ERAT
ITE ION
DB IN
YM THIS
AX ARE
2
A
IS
MS
4J #
4C #
MS
3INGLE
PULSE
6/21
6$36
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Figure 8.
Output characteristics
Figure 9.
!-V
)$
!
6'3 6
Electrical characteristics
Transfer characteristics
)$
!
!-V
6$3 6
6
6
6$36
6'36
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
!-V
6'3
6 6$3
6'3
6$$ 6
/HM
)$ !
1GN#
Figure 12. Capacitance variations
6'3 6
)$!
Figure 13. Output capacitance stored energy
!-V
#
P&
!-V
2$3ON
#ISS
!-V
%OSS
*
#OSS
#RSS
6$36
Doc ID 17432 Rev 2
6$36
7/21
Electrical characteristics
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Figure 14. Normalized gate threshold voltage
vs temperature
!-V
6'3TH
NORM
Figure 15. Normalized on resistance vs
temperature
!-V
2$3ON
NORM
)$ !
6'3 6
)$ !
4* #
Figure 16. Normalized BVDSS vs temperature
!-V
"6$33
NORM
)$ M!
4* #
Figure 17. Source-drain diode forward
characteristics
AM09090v1
VSD
(V)
TJ=-50°C
1.2
TJ=25°C
1.0
0.8
TJ=150°C
0.6
0.4
0.2
8/21
0
4* #
Doc ID 17432 Rev 2
0
5
10
15
20
ISD(A)
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
AM01471v1
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 17432 Rev 2
10%
AM01473v1
9/21
Package mechanical data
4
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/21
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 24. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 17432 Rev 2
11/21
Package mechanical data
Table 10.
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
12/21
Max.
0.4
0°
8°
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Package mechanical data
Figure 25. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
Figure 26. D²PAK (TO-263) drawing
0079457_S
a. All dimension are in millimeters
Doc ID 17432 Rev 2
13/21
Package mechanical data
Table 11.
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/21
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Package mechanical data
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 17432 Rev 2
15/21
Package mechanical data
Table 12.
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
TO-247 mechanical data
mm
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
16/21
Max.
5.50
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Package mechanical data
Figure 28. TO-247 drawing
0075325_F
Doc ID 17432 Rev 2
17/21
Packaging mechanical data
5
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Packaging mechanical data
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
18/21
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 17432 Rev 2
Min.
Max.
330
13.2
26.4
30.4
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Packaging mechanical data
Figure 29. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 30. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 17432 Rev 2
19/21
Revision history
6
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Revision history
Table 14.
20/21
Document revision history
Date
Revision
Changes
19-Jul-2010
1
First release.
27-Jun-2011
2
– Updated Table 6: Dynamic.
– Updated Section 2.1: Electrical characteristics (curves).
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
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21/21
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