STW8NK80Z

STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type STP8NK80Z STP8NK80ZFP STW8NK80Z ■ ■ ■ ■ ■ VDSS 800 V 800 V 800 V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω ID 6.2 A 6.2 A 6.2 A TO-220 1 2 3 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Figure 1. Internal schematic diagram Application ■ Switching applications Table 1. Device summary Marking P8NK80Z P8NK80ZFP W8NK80Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube Order codes STP8NK80Z STP8NK80ZFP STW8NK80Z July 2007 Rev 5 1/15 www.st.com 15 Contents STP8NK80Z - STP8NK80ZFP - STW8NK80Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) PTOT Absolute maximum ratings Value Parameter TO-220 - TO-247 Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 6.2 3.9 24.8 140 1.12 4000 4.5 2500 800 ± 30 6.2 3.9 (1) (1) Unit TO-220FP V V A A A W W/°C V V/ns V 24.8(1) 30 0.24 VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) Max operating Junction temperature Storage temperature -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤6.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 0.89 62.5 300 TO-220FP 4.2 TO-247 0.89 50 °C/W °C/W °C Unit Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 6.2 300 Unit A mJ 3/15 Electrical characteristics STP8NK80Z - STP8NK80ZFP - STW8NK80Z 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage Current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID =1mA, VGS = 0 VDS = Max rating VDS = Max rating, @125°C VGS = ± 20 V VDS = VGS, ID = 100 µA VGS = 10 V, ID = 3.1 A 3 3.75 1.3 Min. 800 1 50 ± 10 4.5 1.5 Typ. Max. Unit V µA µA µA V Ω Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Test conditions VDS = 15v, ID = 3.1 A Min. Typ. 5.2 1320 143 27 58 17 30 48 28 46 8.5 25 9 9 18 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC ns ns ns Input capacitance VDS = 25 V, f = 1 MHz, Output capacitance Reverse transfer capacitance VGS = 0 VDS =0V, VDS = 0V to 640V VDD = 400 V, ID = 3.1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) Coss eq. (2) Equivalent output capacitance td(on) tr tr(off) tr Qg Qgs Qgd tr(Voff) tr tc Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Off-voltage rise time Fall time Cross-over time VDD = 640 V, ID = 6.2 A, VGS = 10 V VDD = 640 V, ID = 6.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 23) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.2 A, VGS = 0 ISD = 6.2 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see Figure 23) 460 2990 13 Test conditions Min. Typ. Max. 6.2 24.8 1.6 Unit A A V ns nC A 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown voltage Igs=± 1mA (Open Drain) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/15 Electrical characteristics STP8NK80Z - STP8NK80ZFP - STW8NK80Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/15 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STP8NK80Z - STP8NK80ZFP - STW8NK80Z Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristic Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Test circuit 3 Test circuit Figure 20. Unclamped inductive waveform Figure 19. Unclamped inductive load test circuit Figure 21. Switching times test circuit for resistive load Figure 22. Gate charge test circuit Figure 23. Test circuit for inductive load switching and diode recovery times 9/15 Package mechanical data STP8NK80Z - STP8NK80ZFP - STW8NK80Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/15 Package mechanical data STP8NK80Z - STP8NK80ZFP - STW8NK80Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 12/15 G STP8NK80Z - STP8NK80ZFP - STW8NK80Z Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 13/15 Revision history STP8NK80Z - STP8NK80ZFP - STW8NK80Z 5 Revision history Table 9. Date 09-Sep-2004 17-Aug-2006 20-Apr-2007 02-Jul-2007 Revision history Revision 2 3 4 5 Complete version New template, no content change Typo errors on Table 6 Table 2 has been updated Changes 14/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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