TN2015H-6I

TN2015H-6I Datasheet 20 A 600 V high temperature SCR thyristors in insulated TO-220 Features A G K K A • High junction temperature: Tj max. = 150 °C • • High static immunity dV/dt = 750 V/µs up to 150 °C Peak off-state voltage VDRM/VRRM = 600 V • • High turn-on current rise dI/dt = 100 A/µs Insulated package TO-220AB: – Insulated voltage: 2500 VRMS • • G – Complies with UL 1557 (File ref : E81734) ECOPACK2 compliant Halogen-free molding, lead-free plating TO-220AB insulated Applications • • • • General purpose AC line load switching Motor control circuits and starters Inrush current limiting circuits Heating resistor control, solid state relays Description Thanks to its operating junction temperature up to 150°C, the TN2015H-6I offers high thermal performance operation up to 20 A rms. Product status TN2015H-6I Product summary Order code TN2015H-6I Package TO-220AB Ins. IT(RMS) 20 A VDRM/VRRM 600 V Tj max. 150 °C Its trade-off noise immunity (dV/dt = 750 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits. DS13203 - Rev 1 - December 2019 For further information contact your local STMicroelectronics sales office. www.st.com TN2015H-6I Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit Tc = 113 °C 20 A Tc = 112 °C 13 Tc = 130 °C 8 Tc = 139 °C 5 tp = 8.3 ms 197 tp = 10 ms 180 tp = 10 ms 162 A2s f = 60 Hz 100 A/µs 600 V tp = 10 ms VDRM/VRRM + 100 V V Tj = 150 °C 4 A Tj = 150 °C 1 W 5 V Storage junction temperature range -40 to +150 °C Tj Maximum operating junction temperature -40 to +150 °C Tl Maximum lead temperature soldering during 10 s 260 °C Insulation rms voltage, 1 minute 2500 V IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t value for fusing, (Tj initial = 25 °C) I2t IG = 2 x IGT, tr ≤ 100 ns dl/dt Critical rate of rise of on-state current VDRM/VRRM Repetitive peak off-state voltage VDSM/VRSM Non Repetitive peak off-state voltage IGM Peak gate current PG(AV) Average gate power dissipation VRGM Maximum peak reverse voltage Tstg Viso tp = 20 µs A A Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT Test conditions Value VD = 12 V, RL = 33 Ω VGT DS13203 - Rev 1 Typ. 6 Max. 15 Max. 1.3 V Min. 0.1 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 50 mA IL IG = 1.2 x IGT Max. 60 mA Min. 750 V/µs Typ. 1.9 µs Typ. 70 µs dV/dt VD = 402 V, gate open tgt IT = 40 A, VD = 402 V, IG = 20 mA, (dIG/dt) max = 0.2 A/µs tq IT = 20 A, VD = 402 V, (dIG/dt) max = 30 A/µs, VR = 25 V, dVD/dt = 40 V/µs Tj = 150 °C Unit Tj = 150 °C Tj = 150 °C page 2/10 TN2015H-6I Characteristics Table 3. Static characteristics Symbol Test conditions Value Unit VTM ITM = 40 A, tp = 380 µs Tj = 25 °C Max. 1.60 VTO Threshold voltage Tj = 150 °C Max. 0.82 RD Dynamic resistance Tj = 150 °C Max. 17.5 mΩ 5 µA 2 mA IDRM, IRRM Tj = 25 °C VD = VDRM; VR = VRRM Max. Tj = 150 °C V Table 4. Thermal parameters Symbol DS13203 - Rev 1 Parameter Value Rth(j-c) Junction to case (DC) Max. 2.1 Rth(j-a) Junction to ambient (DC) Typ. 60 Unit °C/W page 3/10 TN2015H-6I Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum power dissipation versus average onstate current 20 Figure 2. Average and DC on-state current versus case temperature P(W) IT(AV) (A) 22 18 α = 120 ° 16 α = 180 ° DC 18 α = 90 ° 14 α = 90° 16 α = 60 ° 14 α = 30 ° 12 DC 20 α = 120° α = 180° α = 60° α = 30° 12 10 10 8 8 6 6 360 ° 4 2 4 2 IT(AV) (A) α 0 2 4 6 8 10 12 14 Tc(°C) 0 0 16 Figure 3. Average and D.C. on state current versus ambient temperature 0 1.0E+00 2 75 100 125 150 K = [Zth/ Rth] Zth(j-c) DC 2.5 50 Figure 4. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration IT(AV) (A) 3 25 Zth(j-a) α = 180 ° 1.5 1.0E-01 1 0.5 tP(s) Ta(°C) 0 0 25 50 75 1.0E-02 100 125 150 Figure 5. Relative variation of gate triggering current and gate voltage versus junction temperature (typical values) IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] I 1.0E-02 1.0E+00 1.0E+01 1.0E+02 1.0E+03 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 2.0 GT 1.0E-01 Figure 6. Relative variation of holding and latching current versus junction temperature (typical values) 2.4 2.5 2.0 1.0E-03 I H 1.6 1.5 1.2 1.0 VGT 0.8 0.5 0.0 -50 IL 0.4 Tj(°C) Tj(°C) -25 DS13203 - Rev 1 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 page 4/10 TN2015H-6I Characteristics (curves) Figure 7. Relative variation of static dV/dt immunity versus junction temperature 12 Figure 8. Surge peak on-state current versus number of cycles I dV/dt [Tj] / dV/dt [Tj= 150 °C] 200 TSM (A) Non repetitive Tj = 25 °C Above test equipment capability tp=10ms 150 One cycle 8 100 4 VD = VR = 402 V 50 Tj (°C) 0 25 50 75 Number of cycles 100 125 0 150 Figure 9. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 Repetitive Tc = 113 °C ITSM(A) 1 10 100 1000 Figure 10. On-state characteristics (maximum values) ITM(A) 1000 Tj initial = 25 °C 100 1000 Tj max: Vt0 = 0.82 V Rd = 17.5 mΩ ITSM dl/dt limitation: 100 A/µs 10 100 Tj = 150 °C 10 0.01 tp(ms) 0.1 1 Tj = 25 °C VTM(V) 1 0 10 0.5 1 1.5 2 2.5 3 3.5 4 Figure 11. Relative variation of leakage current versus junction IDRM, IRRM [ Tj ; VDRM, VRRM ] / IDRM , IRRM [ 150 °C; 600 V ] 1.E+00 VDRM = VRRM = 600 V 1.E-01 1.E-02 1.E-03 Tj(°C) 1.E-04 25 DS13203 - Rev 1 50 75 100 125 150 page 5/10 TN2015H-6I Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AB insulated package information • • • • Molding compound resin is halogen-free and meets flammability standard UL94 level 0 Lead-free package leads finishing ECOPACK2 compliant Recommended torque: 0.4 to 0.6 N.m Figure 12. TO-220AB insulated package outline C B b2 I Resin gate 0.5 mm max. protusion(1) L F A I4 l3 c2 a1 l2 a2 M b1 e Resin gate 0.5 mm max. protusion(1) c1 (1)Resin gate position accepted in one of the two positions or in the symmetrical opposites. DS13203 - Rev 1 page 6/10 TN2015H-6I TO-220AB insulated package information Table 5. TO-220AB insulated package mechanical data Dimensions Ref. Min. A Inches(1) Millimeters Typ. 15.20 a1 Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS13203 - Rev 1 page 7/10 TN2015H-6I Ordering information 3 Ordering information Figure 13. Ordering information scheme TN 20 15 H - 6 I Series TN = SCR RMS current 20 = 20 A Gate triggering current 15 = 15 mA High temperature H = 150 °C Voltage 6 = 600 V Package I = TO-220AB insulated Delivery mode Blank = tube Table 6. Ordering information DS13203 - Rev 1 Order code Marking Package Weight Base qty. Delivery mode TN2015H-6I TN2015H6I TO-220AB Ins. 2.3 g 50 Tube page 8/10 TN2015H-6I Revision history Table 7. Document revision history DS13203 - Rev 1 Date Revision 16-Dec-2019 1 Changes Initial release. page 9/10 TN2015H-6I IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS13203 - Rev 1 page 10/10