0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
TN2015H-6T

TN2015H-6T

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    SCR600V20ATO-220

  • 数据手册
  • 价格&库存
TN2015H-6T 数据手册
TN2015H-6T High temperature 20 A SCRs Datasheet − production data Description $ Thanks to a junction temperature Tj up to 150 °C and a non-isolated TO-220 package, the TN2015H-6T offers high thermal performance up to 20 A rms. The trade-off between the device’s noise immunity (dV/dt = 750 V/µs), its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/µs) allows the design of robust and compact control circuits for voltage regulators in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, and inrush current limiting circuits. * . $ . $ Table 1. Device summary * Order code Package VDRM/VRRM IGT TN2015H-6T TO-220AB 600 V 15 mA 72$% Features • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 750 V/µs up to 150 °C • Gate triggering current IGT = 15 mA • Blocking voltage VDRM/VRRM = 600 V • High turn on current rise dI/dt: 100 A/µs • ECOPACK®2 compliant component Applications • Voltage regulator circuits for motorbikes • Inrush current limiting circuits • Motor control circuits and starters • Light dimmers • Solid state relays February 2015 This is information on a product in full production. DocID027463 Rev 1 1/9 www.st.com 9 Characteristics 1 TN2015H-6T Characteristics Table 2. Absolute ratings Symbol IT(RMS) IT(AV) ITSM I ²t dI/dt VDRM, VRRM IGM Parameter On-state rms current (180° conduction angle) Average on-state current (180° conduction angle) Unit Tc = 132 °C 20 A Tc = 132 °C 12.7 Tc = 137 °C 10 Tc = 140 °C 8 A Non repetitive surge peak on-state current (Tj initial = 25 °C) t = 8.3 ms 197 t = 10 ms 180 I²t value for fusing (Tj initial = 25 °C) tp = 10 ms 162 A² s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns, Tj = 25 °C F = 60 Hz 100 A/µs 600 V Tj = 150 °C 4 A Tj = 150 °C 1 W - 40 to + 150 - 40 to + 150 °C 260 °C A Repetitive peak off-state voltage Peak gate current PG(AV) Value tp = 20 µs Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Value Unit Typ. 6 Max. 15 Max. 1.3 V Min. 0.2 V IT = 500 mA, gate open Max. 50 mA IG = 1.2 x IGT Max. 60 mA Min. 750 V/µs Typ 1.9 µs Typ 70 µs IGT VD = 12 V, RL = 33 Ω VGT VD = 12 V, RL = 33 Ω VGD VD = VDRM, RL = 3.3 kΩ IH IL dV/dt 2/9 Test conditions VD = 402 V, gate open tgt IT = 40 A, VD = 600 V, IG = 100 mA, (dIG/dt)max = 0.2 A/µs tq VD = 402 V, VR = 25 V, IT = 20 A, (dIG/dt)max = 30A/µs, dVD/dt = 50 V/µs DocID027463 Rev 1 mA Tj = 150 °C Tj = 150 °C Tj = 150 °C TN2015H-6T Characteristics Table 4. Static characteristics Symbol Test conditions Value Unit VTM ITM = 40 A, tp = 380 µs Tj = 25 °C Max. 1.6 V Vt0 Threshold voltage Tj = 150 °C Max. 0.82 V Rd Dynamic resistance Tj = 150 °C Max. 17.5 mΩ 5 µA 2 mA Value Unit IDRM, IRRM Tj = 25 °C VD = VDRM, VR = VRRM Max. Tj = 150 °C Table 5. Thermal resistance Symbol Parameter Rth(j-c) Junction to case (AC) 1.0 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus average on-state current  3 :  Į ƒ  '& Į ƒ Į ƒ Į ƒ   Į ƒ     ƒ    Figure 2. Average and DC on-state current versus case temperature ,7 $9 $ Į      Figure 3. Average and DC on-state current versus ambient temperature               ,7 $ $9 '& Į ƒ Į ƒ Į ƒ Į ƒ Į ƒ 7 ƒ& F        Figure 4. Relative variation of thermal impedance versus pulse duration . >=WK5WK@ ( ,7 $9 $  = WK MF '&  =WK MD Į ƒ (     W3 V 7D ƒ&        ( ( ( ( ( ( ( ( DocID027463 Rev 1 3/9 Characteristics TN2015H-6T Figure 5. Relative variation of gate triggering current and gate voltage versus junction temperature (typical values)  ,*79*7>7M@,*79*7>7M ƒ&@ Figure 6. Relative variation of holding current and latching current versus junction temperature (typical values)   ,+,/ >7M@,+,/ >7M ƒ&@ ,/  ,*7   ,+  9*7      7M ƒ&         Figure 7. Relative variation of static dV/dt immunity versus junction temperature (typical values)          Figure 8. Surge peak on-state current versus number of cycles G9GW>7M@G9GW>7M ƒ&@  9' 95 9 7M ƒ&   ,760 $ 1RQUHSHWLWLYH7M ƒ&  $ERYHWHVWHTXLSPHQWFDSDELOLW\  WS PV  2QHF\FOH    5HSHWLWLYH7F ƒ&     7M ƒ&    1XPEHURIF\FOHV       Figure 9. Non-repetitive surge peak on-state current for a sinusoidal pulse (tp < 10 ms)  ,760 $  Figure 10. On-state characteristics (maximum values)  GOGWOLPLWDWLRQ$—V  ,70 $ 7MPD[ 9W 9 5G Pȍ 7 LQLWLDO ƒ& M   ,760     4/9 W PV S    7  ƒ& M   DocID027463 Rev 1 7M ƒ&   9  9 70  TN2015H-6T Characteristics Figure 11. Relative variation of leakage current versus junction temperature (tp < 10 ms) ( ,'50,550>7M@,'50,550>7M ƒ&@ 9'50 9550 9 ( ( ( (  7M ƒ&    DocID027463 Rev 1   5/9 Package information 2 TN2015H-6T Package information • Epoxy meets UL94, V0 • Lead-free package • Halogen free molding compound • Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 12. TO-220AB dimension definitions C B ØI b2 L F A I4 l3 c2 a1 l2 a2 M b1 e 6/9 DocID027463 Rev 1 c1 TN2015H-6T Package information Table 6. TO-220AB dimension values Dimensions Ref. Millimeters Min. A Typ. 15.20 a1 Inches Max. Min. 15.90 0.598 3.75 Typ. Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.80 0.622 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 16.40 2.60 DocID027463 Rev 1 0.646 0.661 0.102 7/9 Ordering information 3 TN2015H-6T Ordering information Figure 13. Ordering information scheme 71+7 6HULHV 71 6&5 5PVFXUUHQW  $ *DWHVHQVLWLYLW\  P$ +LJKWHPSHUDWXUH 9ROWDJH  9 3DFNDJH 7 72$% 'HOLYHU\PRGH %ODQN WXEH Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode TN2015H-6T TN2015H6 TO-220AB 2.3 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision 25-Feb-2015 1 Changes Initial release. DocID027463 Rev 1 TN2015H-6T IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID027463 Rev 1 9/9
TN2015H-6T 价格&库存

很抱歉,暂时无法提供与“TN2015H-6T”相匹配的价格&库存,您可以联系我们找货

免费人工找货