TSH350IDT

TSH350 550MHz low noise current feedback amplifier Features ■ ■ ■ ■ ■ ■ ■ Bandwidth: 550MHz in unity gain Quiescent current: 4.1mA Slew rate: 940V/μs Input noise: 1.5nV/√Hz Distortion: SFDR=-66dBc (10MHz, 1Vpp) 2.8Vpp minimum output swing on 100Ω load for a 5V supply Tested on 5V power supply SO-8 Pin connections (top view) SOT23-5 Applications ■ ■ ■ Communication & video test equipment Medical instrumentation ADC drivers Output 1 VCC - 2 Non-Inv. In. 3 SOT23-5 5 VCC + +4 Inv. In. Description The TSH350 is a current feedback operational amplifier using a very high-speed complementary technology to provide a bandwidth up to 410MHz while drawing only 4.1mA of quiescent current. With a slew rate of 940V/µs and an output stage optimized for driving a standard 100Ω load, this circuit is highly suitable for applications where speed and power-saving are the main requirements. The TSH350 is a single operator available in the tiny SOT23-5 and SO-8 plastic packages, saving board space as well as providing excellent thermal and dynamic performance. NC 1 Inv. In. 2 Non-Inv. In. 3 VCC - 4 SO-8 8 NC _ + 7 VCC + 6 Output 5 NC June 2007 Rev 4 1/22 www.st.com 22 Absolute maximum ratings TSH350 1 Absolute maximum ratings Table 1. Symbol VCC Vid Vin Tstg Tj Rthja Supply voltage (1) Differential input voltage Input voltage range (3) (2) Absolute maximum ratings (AMR) Parameter Value 6 +/-0.5 +/-2.5 -65 to +150 150 250 150 80 28 500 830 2 0.5 200 60 1.5 1.5 200 Unit V V V °C °C °C/W Storage temperature Maximum junction temperature Thermal resistance junction to ambient SOT23-5 SO-8 Thermal resistance junction to case SOT23-5 SO-8 Maximum power dissipation(4) (@Tamb=25°C) for Tj=150°C SOT23-5 SO-8 HBM: human body model (5) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 Rthjc °C/W Pmax mW kV ESD MM: machine model (6) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 CDM: charged device model(7) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 Latch-up immunity V kV mA 1. All voltage values are measured with respect to the ground pin. 2. Differential voltage is the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output voltage must never exceed VCC +0.3V. 4. Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on all amplifiers. 5. Human body model: A 100pF capacitor is charged to the specified voltage, then discharged through a 1.5kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating. 6. Machine model: A 200pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5Ω). This is done for all couples of connected pin combinations while the other pins are floating. 7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly to the ground through only one pin. This is done for all pins. 2/22 TSH350 Table 2. Symbol VCC Vicm Toper Supply voltage (1) Absolute maximum ratings Operating conditions Parameter Value 4.5 to 5.5 -VCC+1.5V to +VCC-1.5V -40 to + 85 Unit V V °C Common mode input voltage Operating free air temperature range 1. Tested in full production at 5V (±2.5V) supply voltage. 3/22 Electrical characteristics TSH350 2 Table 3. Symbol Electrical characteristics Electrical characteristics for VCC = ±2.5V, Tamb = 25°C (unless otherwise specified) Parameter Test conditions Min. Typ. Max. Unit DC performance Vio ΔVio Iib+ Input offset voltage Offset voltage between both inputs Vio drift vs. temperature Non inverting input bias current DC current necessary to bias the input + Inverting input bias current DC current necessary to bias the input Common mode rejection ratio 20 log (ΔVic/ΔVio) Supply voltage rejection ratio 20 log (ΔVCC/ΔVio) Power supply rejection ratio 20 log (ΔVCC/ΔVout) Positive supply current DC consumption with no input signal Tamb Tmin < Tamb < Tmax Tmin < Tamb < Tmax Tamb Tmin < Tamb < Tmax Tamb Tmin < Tamb < Tmax ΔVic = ±1V Tmin < Tamb < Tmax ΔVCC=+3.5V to +5V Tmin < Tamb < Tmax AV = +1, ΔVCC=±100mV at 1kHz Tmin < Tamb < Tmax No load 68 56 0.8 1 0.9 12 13 1 2.5 60 dB 58 81 dB 78 51 dB 48 4.1 4.9 mA 20 35 μV/°C μA μA 4 mV Iib- CMR SVR PSR ICC Dynamic performance and output characteristics Transimpedance Output voltage/input current gain in open loop of a CFA. For a VFA, the analog of this feature is the open loop gain (AVD) -3dB bandwidth Frequency where the gain is 3dB below the DC gain AV Note: Gain bandwidth product criterion is not applicable for current-feedback-amplifiers Gain flatness @ 0.1dB Band of frequency where the gain variation does not exceed 0.1dB SR Slew rate Maximum output speed of sweep in large signal High level output voltage ΔVout = ±1V, RL = 100Ω Tmin < Tamb < Tmax Small signal Vout=20mVpp AV = +1, RL = 100Ω AV = +2, RL = 100Ω AV = +10, RL = 100Ω AV = -2, RL = 100Ω Small signal Vout=100mVp AV = +1, RL = 100Ω Vout = 2Vpp, AV = +2, RL = 100Ω RL = 100Ω Tmin < Tamb < Tmax 1.44 170 270 kΩ kΩ ROL 250 Bw 250 550 390 125 370 MHz 65 940 1.56 1.49 V/μs V VOH 4/22 TSH350 Table 3. Symbol VOL Electrical characteristics Electrical characteristics for VCC = ±2.5V, Tamb = 25°C (unless otherwise specified) Parameter Low level output voltage Test conditions RL = 100Ω Tmin < Tamb < Tmax Output to GND Isink Short-circuit output current coming in the opTmin < Tamb < Tmax amp (see Figure 9) 135 Min. Typ. Max. Unit V -1.53 -1.44 -1.49 205 195 Iout mA Isource Output current coming out from the op-amp (see Figure 10) Output to GND Tmin < Tamb < Tmax -140 -210 -185 Noise and distortion eN Equivalent input noise voltage See Section 5: Noise measurements Equivalent input noise current (+) See Section 5: Noise measurements iN Equivalent input noise current (-) See Section 5: Noise measurements F = 100kHz 13 pA/√ Hz F = 100kHz F = 100kHz 1.5 20 nV/√ Hz pA/√ Hz SFDR AV = +1, Vout = 1Vpp Spurious free dynamic range F = 10MHz The highest harmonic of the output spectrum F = 20MHz F = 50MHz when injecting a filtered sine wave F = 100MHz -66 -57 -46 -42 dBc Table 4. Closed-loop gain and feedback components Gain +10 -10 +2 ±2.5 -2 +1 -1 300 820 300 370 550 350 70 65 120 Rfb (Ω) 300 300 300 -3dB Bw (MHz) 125 120 390 0.1dB Bw (MHz) 22 20 110 VCC (V) 5/22 Electrical characteristics TSH350 Figure 1. Frequency response, positive gain Figure 2. Frequency response, negative gain 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 Small Signal -6 Vcc=5V -8 Load=100Ω -10 1M Gain=+10 Gain=+4 Gain=+2 Gain=+1 10M 100M 1G 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 Small Signal -6 Vcc=5V -8 Load=100Ω -10 1M Gain=-10 Gain=-4 Gain (dB) Gain (dB) Gain=-2 Gain=-1 10M 100M 1G Frequency (Hz) Frequency (Hz) Figure 3. 12,1 Compensation, gain=+4 Figure 4. 6,2 Compensation, gain=+2 12,0 6,1 Gain Flatness (dB) Gain Flatness (dB) 6,0 11,9 5,9 Vin + Vin + - Vout Vout 11,8 4pF - 5,8 300R 100R 8k2 2pF 300R 100R 11,7 Gain=+4, Vcc=5V, Small Signal 5,7 Gain=+2, Vcc=5V, Small Signal 11,6 1M 10M 100M 5,6 1M 10M 100M 1G Frequency (Hz) Frequency (Hz) Figure 5. Frequency response vs. capacitor load C-Load=1pF R-iso=22ohms Figure 6. Step response vs. capacitor load 10 8 6 3 C-Load=1pF R-iso=22ohms 2 Output step (Volt) 4 Gain (dB) 2 0 -2 -4 -6 -8 -10 1M 300R 300R 1k C-Load Vin + - C-Load=10pF R-iso=39ohms C-Load=10pF R-iso=39ohms 1 C-Load=22pF R-iso=27ohms Vin + - Vout R-iso C-Load=22pF R-iso=27ohms Vout R-iso 1k C-Load 0 300R 300R Gain=+2, Vcc=5V, Small Signal Gain=+2, Vcc=5V, Small Signal 10M 100M 1G -1 0,0s 2,0ns 4,0ns 6,0ns 8,0ns 10,0ns 12,0ns 14,0ns 16,0ns 18,0ns 20,0ns Frequency (Hz) Time (ns) 6/22 TSH350 Electrical characteristics Figure 7. 2,0 Slew rate Figure 8. 4,0 Output amplitude vs. load Max. Output Amplitude (Vp-p) Output Response (V) 3,5 1,5 1,0 3,0 0,5 2,5 0,0 -2ns -1ns 0s 1ns Gain=+2 Vcc=5V Load=100 Ω 2ns 3ns 2,0 10 100 1k 10k Gain=+2 Vcc=5V Load=100Ω 100k Time (ns) Load (ohms) Figure 9. 300 Isink +2.5V V OL Figure 10. Isource 0 without load 250 + -1V -50 Isink V - 2.5V _ Isink (mA) Amplifier in open loop without load 150 Isource (mA) 200 RG -100 -150 + +2.5V V OH without load 100 -200 +1V _ - 2.5V Isource V 50 -250 RG Amplifier in open loop without load 0 -2,0 -1,5 -1,0 -0,5 0,0 -300 0,0 0,5 1,0 1,5 2,0 V (V) V (V) Figure 11. Input current noise vs. frequency 70 Figure 12. Input voltage noise vs. frequency 4.0 60 Pos. Current Noise 3.5 in (pA/sqrt(Hz)) 50 en (nV/sqrt(Hz)) 1M 10M 3.0 40 Neg. Current Noise 2.5 30 2.0 20 1.5 10 1k 10k 100k 1.0 1k 10k 100k 1M 10M Frequency (Hz) Frequency (Hz) 7/22 Electrical characteristics TSH350 Figure 13. Quiescent current vs. VCC 5 4 3 Icc(+) Figure 14. Distortion vs. output amplitude 0 -5 -10 -15 -20 HD2 & HD3 (dBc) 2 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Icc (mA) 1 0 -1 -2 -3 -4 -5 1,25 Icc(-) Gain=+2 Vcc=5V Input to ground, no load HD2 HD3 -75 -80 1,75 2,00 2,25 2,50 Gain=+2 Vcc=5V F=30MHz Load=100Ω 1 2 3 4 1,50 0 +/-Vcc (V) Output Amplitude (Vp-p) Figure 15. Distortion vs. output amplitude -20 -25 -30 -35 -40 Figure 16. Noise figure 40 35 30 25 HD2 & HD3 (dBc) -45 -50 -55 -60 -65 -70 -75 -80 -85 -90 -95 -100 0 1 2 3 4 NF (dB) Gain=+2 Vcc=5V F=10MHz Load=100Ω HD2 20 15 10 5 0 1 10 100 1k 10k 100k HD3 Gain=? Vcc=5V Output Amplitude (Vp-p) Rsource (ohms) Figure 17. Distortion vs. output amplitude -20 -25 -30 -35 -40 Figure 18. Output amplitude vs. frequency 5 4 HD2 & HD3 (dBc) -50 -55 -60 -65 -70 -75 -80 -85 -90 -95 -100 0 1 2 3 4 Vout max. (Vp-p) Gain=+2 Vcc=5V F=20MHz Load=100Ω -45 HD2 3 HD3 2 1 0 1M Gain=+2 Vcc=5V Load=100Ω 10M 100M 1G Output Amplitude (Vp-p) Frequency (Hz) 8/22 TSH350 Electrical characteristics Figure 19. Reverse isolation vs. frequency 0 Figure 20. SVR vs. temperature 90 85 -20 80 Isolation (dB) SVR (dB) -40 75 70 65 60 -60 -80 -100 1M Small Signal Vcc=5V Load=100Ω 10M 100M 1G 55 50 Gain=+1 Vcc=5V Load=100Ω -40 -20 0 20 40 60 80 100 120 Frequency (Hz) Temperature (°C) Figure 21. Bandwidth vs. temperature 550 Figure 22. ROL vs. temperature 340 500 320 450 300 Bw (MHz) 400 ROL (MΩ ) 280 260 240 220 200 350 300 Gain=+1 250 Vcc=5V Load=100 Ω 200 -40 -20 0 20 40 60 80 100 120 Open Loop Vcc=5V -40 -20 0 20 40 60 80 100 120 Temperature (°C) Temperature (°C) Figure 23. CMR vs. temperature 70 Figure 24. Ibias vs. temperature 14 68 12 66 10 64 8 Ib(+) CMR (dB) IBIAS (μA) 62 60 58 56 6 4 2 0 Ib(-) 54 52 50 Gain=+1 Vcc=5V Load=100Ω -40 -20 0 20 40 60 80 100 120 -2 -4 Gain=+1 Vcc=5V Load=100Ω -40 -20 0 20 40 60 80 100 120 Temperature (°C) Temperature (°C) 9/22 Electrical characteristics TSH350 Figure 25. Vio vs. temperature 1000 Figure 26. ICC vs. temperature 6 4 800 2 Icc(+) VIO (micro V) ICC (mA) 600 0 -2 Icc(-) 400 -4 -6 200 Open Loop Vcc=5V Load=100Ω -40 -20 0 20 40 60 80 100 120 Gain=+1 Vcc=5V -8 no Load In+/In- to GND -10 -40 -20 0 20 40 60 80 100 120 0 Temperature (°C) Temperature (°C) Figure 27. VOH and VOL vs. temperature 2 Figure 28. Iout vs. temperature 300 200 1 0 VOH Isource 100 VOH & OL (V) -1 -2 -3 -4 VOL Iout (mA) 0 -100 Isink -200 -300 -400 0 20 40 60 80 Gain=+1 Vcc=5V Load=100Ω -20 Output: short-circuit Gain=+1 Vcc=5V -40 -20 0 20 40 60 80 100 120 -5 -40 Temperature (°C) Temperature (°C) 10/22 TSH350 Evaluation boards 3 Evaluation boards An evaluation board kit optimized for high-speed operational amplifiers is available (order code: KITHSEVAL/STDL). As well as a CD-ROM containing datasheets, articles, application notes and a user manual, the kit includes the following evaluation boards: ● ● ● ● SOT23_SINGLE_HF BOARD Board for the evaluation of a single high-speed op-amp in SOT23-5 package. SO8_SINGLE_HF Board for the evaluation of a single high-speed op-amp in SO-8 package. SO8_DUAL_HF Board for the evaluation of a dual high-speed op-amp in SO-8 package. SO8_S_MULTI Board for the evaluation of a single high-speed op-amp in SO-8 package in inverting and non-inverting configuration, dual and single supply. ● SO14_TRIPLE Board for the evaluation of a triple high-speed op-amp in SO-14 package with video application considerations. Board material: ● ● ● ● 2 layers FR4 (ε r=4.6) epoxy 1.6mm copper thickness: 35µm Figure 29. Evaluation kit for high-speed op-amps 11/22 Power supply considerations TSH350 4 Power supply considerations Correct power supply bypassing is very important for optimizing performance in highfrequency ranges. Bypass capacitors should be placed as close as possible to the IC pins to improve high-frequency bypassing. A capacitor greater than 1μF is necessary to minimize the distortion. For better quality bypassing, a capacitor of 10nF can be added which should also be placed as close as possible to the IC pins. Bypass capacitors must be incorporated for both the negative and the positive supply. Note: On the SO8_SINGLE_HF board, these capacitors are C6, C7, C8, C9. Figure 30. Circuit for power supply bypassing +VCC + 10nF 10µF + 10nF 10µF + -VCC Single power supply In the event that a single supply system is used, biasing is necessary to obtain a positive output dynamic range between 0V and +VCC supply rails. Considering the values of VOH and VOL, the amplifier will provide an output swing from +0.9V to +4.1V on a 100Ω load. The amplifier must be biased with a mid-supply (nominally +VCC/2), in order to maintain the DC component of the signal at this value. Several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). A high resistance value is required to limit the current consumption. On the other hand, the current must be high enough to bias the non-inverting input of the amplifier. If we consider this bias current (35μA maximum) as 1% of the current through the resistance divider, to keep a stable mid-supply, two resistances of 750Ω can be used. The input provides a high-pass filter with a break frequency below 10Hz which is necessary to remove the original 0 volt DC component of the input signal, and to fix it at +VCC/2. Figure 31 illustrates a 5V single power supply configuration for the SO8_S_MULTI evaluation board (see Evaluation boards on page 11). 12/22 TSH350 Power supply considerations A capacitor CG is added in the gain network to ensure a unity gain in low frequency to keep the right DC component at the output. CG contributes to a high-pass filter with Rfb//RG and its value is calculated with a consideration of the cut off frequency of this low-pass filter. Figure 31. Circuit for +5V single supply (using evaluation board SO8_S_MULTI) +5V 10µF IN +5V R1 750 Rfb R2 750 + 1µF 10nF + RG CG Rin 1k + _ 100µF OUT 100 13/22 Noise measurements TSH350 5 Noise measurements The noise model is shown in Figure 32: ● ● ● eN is the input voltage noise of the amplifier iNn is the negative input current noise of the amplifier iNp is the positive input current noise of the amplifier Figure 32. Noise model + R3 iN+ _ output HP3577 Input noise: 8nV/√Hz N3 iN- eN N2 R1 R2 N1 The thermal noise of a resistance R is 4kTR Δ F where ΔF is the specified bandwidth. On a 1Hz bandwidth the thermal noise is reduced to: 4kTR where k is the Boltzmann's constant, equal to 1,374.10-23J/°K. T is the temperature (°K). The output noise eNo is calculated using the Superposition Theorem. However, eNo is not the simple sum of all noise sources, but rather the square root of the sum of the square of each noise source, as shown in Equation 1: Equation 1 eNo = V1 + V2 + V3 + V4 + V5 + V6 2 2 2 2 2 2 14/22 TSH350 Equation 2 Noise measurements 2 2 2 2 2 2 2 2 2 R2 R2 2 eNo = eN × g + iNn × R2 + iNp × R3 × g + ------- × 4kTR1 + 4kTR2 + 1 + ------- × 4kTR3 R1 R1 The input noise of the instrumentation must be extracted from the measured noise value. The real output noise value of the driver is: Equation 3 eNo = ( Measured ) – ( instrumentation ) 2 2 The input noise is called equivalent input noise because it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eNo/g). After simplification of the fourth and the fifth term of Equation 2 we obtain: Equation 4 2 2 2 2 2 2 2 2 R2 2 eNo = eN × g + iNn × R2 + iNp × R3 × g + g × 4kTR2 + 1 + ------- × 4kTR3 R1 Measurement of the input voltage noise eN If we assume a short-circuit on the non-inverting input (R3=0), from Equation 4 we can derive: Equation 5 eNo = eN × g + iNn × R2 + g × 4kTR2 2 2 2 2 In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as possible. In the other hand, the gain must be large enough: R3=0, gain: g=100 Measurement of the negative input current noise iNn To measure the negative input current noise iNn, we set R3=0 and use Equation 5. This time, the gain must be lower in order to decrease the thermal noise contribution: R3=0, gain: g=10 Measurement of the positive input current noise iNp To extract iNp from Equation 3, a resistance R3 is connected to the non-inverting input. The value of R3 must be chosen in order to keep its thermal noise contribution as low as possible against the iNp contribution: R3=100W, gain: g=10 15/22 Intermodulation distortion product TSH350 6 Intermodulation distortion product The non-ideal output of the amplifier can be described by the following series: V out = C 0 + C 1 V in + C 2 V 2 in + …+ Cn V n in where the input is Vin=Asinωt, C0 is the DC component, C1(Vin) is the fundamental and Cn is the amplitude of the harmonics of the output signal Vout. A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input signal contributes to harmonic distortion and to the intermodulation product. The study of the intermodulation and distortion for a two-tone input signal is the first step in characterizing the driving capability of multi-tone input signals. In this case: V in = A sin ω1 t + A sin ω2 t then: V out = C 0 + C 1 ( A sin ω1 t + A sin ω2 t ) + C 2 ( A sin ω1 t + A sin ω2 t ) …+ C n ( A sin ω1 t + A sin ω2 t ) 2 n From this expression, we can extract the distortion terms, and the intermodulation terms from a single sine wave: ● ● second order intermodulation terms IM2 by the frequencies (ω1-ω2) and (ω1+ 2) with an ω amplitude of C2A2 third order intermodulation terms IM3 by the frequencies (2ω1-ω2), (2ω1+ 2), (− 1+2ω2) ω ω and (ω1+ 2) with an amplitude of (3/4)C3A3 2ω The intermodulation product of the driver is measured by using the driver as a mixer in a summing amplifier configuration (see Figure 33). In this way, the non-linearity problem of an external mixing device is avoided. Figure 33. Inverting summing amplifier (using evaluation board SO8_S_MULTI) Vin1 Vin2 R1 Rfb R2 _ Vout + 100 R 16/22 TSH350 Inverting amplifier biasing 7 Inverting amplifier biasing A resistance is necessary to achieve good input biasing, such as resistance R shown in Figure 34. The magnitude of this resistance is calculated by assuming the negative and positive input bias current. The aim is to compensate for the offset bias current, which could affect the input offset voltage and the output DC component. Assuming Iib-, Iib+, Rin, Rfb and a zero volt output, the resistance R is: R in × R fb R = ----------------------R in + R fb Figure 34. Compensation of the input bias current Rfb Rin Iib- _ VCC+ Output + Iib+ R VCC- Load 17/22 Active filtering TSH350 8 Active filtering Figure 35. Low-pass active filtering, Sallen-Key C1 R1 IN R2 C2 + OUT _ 100 RG Rfb 910 From the resistors Rfb and RG we can directly calculate the gain of the filter in a classic noninverting amplification configuration: R fb A V = g = 1 + -------Rg We assume the following expression as the response of the system: Vout j ω g T j ω = ---------------- = ---------------------------------------Vin j ω j ω ( j ω) 2 1 + 2 ζ ---- + ----------ωc ω 2 c The cut-off frequency is not gain-dependent and so becomes: 1 ωc = -----------------------------------R1R2C1C2 The damping factor is calculated by the following expression: 1 ζ = -- ωc ( C 1 R 1 + C 1 R 2 + C 2 R1 – C 1 R 1 g ) 2 The higher the gain, the more sensitive the damping factor is. When the gain is higher than 1, it is preferable to use some very stable resistor and capacitor values. In the case of R1=R2=R: R fb 2C 2 – C 1 -------Rg ζ = -------------------------------2 C1 C2 Due to a limited selection of values of capacitors in comparison with resistors, we can set C1=C2=C, so that: R fb 2R 2 – R 1 -------Rg ζ = -------------------------------2 R1 R2 18/22 TSH350 Package information 9 Package information Figure 36. SOT23-5 package mechanical data Dimensions Ref. Min. Millimeters Typ. Max. Min. Mils Typ. Max. A A1 A2 b C D E E1 e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.95 1.9 0.35 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 35.4 0.00 35.4 13.7 3.5 110.2 102.3 59.0 37.4 74.8 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 0.55 13.7 21.6 19/22 Package information Figure 37. SO-8 package mechanical data Dimensions Ref. Min. Millimeters Typ. Max. Min. Inches Typ. TSH350 Max. A A1 A2 b c D H E1 e h L k ccc 0.25 0.40 1° 0.10 1.25 0.28 0.17 4.80 5.80 3.80 4.90 6.00 3.90 1.27 1.75 0.25 0.004 0.049 0.48 0.23 5.00 6.20 4.00 0.011 0.007 0.189 0.228 0.150 0.193 0.236 0.154 0.050 0.50 1.27 8° 0.10 0.010 0.016 1° 0.069 0.010 0.019 0.010 0.197 0.244 0.157 0.020 0.050 8° 0.004 20/22 TSH350 Ordering information 10 Ordering information Table 5. Order codes Temperature range Package Packing Marking Part number TSH350ILT TSH350ID TSH350IDT -40°C to +85°C SOT23-5 SO-8 SO-8 Tape & reel Tube Tape & reel K305 TSH350I TSH350I 11 Revision history Date Revision Changes 1-Oct-2004 10-Dec-2004 21-Jun-2005 8-Jun-2007 1 2 3 4 First release corresponding to Preliminary Data version of datasheet. Release of mature product datasheet. In Table 1 on page 2, Rthjc thermal resistance junction to ambient replaced by thermal resistance junction to case. Format update. 21/22 TSH350 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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