VN02HSP

® VN02HSP HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN02HSP s V DSS 60 V R DS(on ) 0.4 Ω I OUT 6A V CC 36 V s s s s s OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION 10 1 DESCRIPTION The VN02HSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM PowerSO-10™ August 1998 1/8 VN02HSP ABSOLUTE MAXIMUM RATING Symbol V (BR)DSS I OUT IR I IN -V CC I STAT V ESD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c ≤ 25 C Junction Operating Temperature Storage Temperature o Value 60 6 -6 ± 10 -4 ± 10 2000 29 -40 to 150 -55 to 150 Unit V A A mA V mA V W o o C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/8 VN02HSP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.35 50 o o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol VCC R on IS Parameter Supply Voltage On State Resistance Supply Current Test Conditions see note 1 I OUT = 3 A I OUT = 3 A Off State On State T j = 25 oC T j ≥ 25 C o Min. 5 Typ. Max. 36 0.8 0.4 50 20 Unit V Ω Ω µA mA SWITCHING Symbol t d(on) tr t d(off) tf (di/dt) on (di/dt) off V demag Parameter Turn-on Delay Time Of Output Current Rise Time Of Output Current Turn-off Delay Time Of Output Current Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage Test Conditions I OUT = 3 A R esistive Load Input Rise Time < 0.1 µ s T j = 2 5 o C I OUT = 3 A R esistive Load Input Rise Time < 0.1 µ s T j = 2 5 o C I OUT = 3 A R esistive Load Input Rise Time < 0.1 µ s T j = 2 5 o C I OUT = 3 A R esistive Load Input Rise Time < 0.1 µ s T j = 2 5 o C I OUT = 3 A I OUT = IOV I OUT = 3 A I OUT = IOV I OUT = 3 A 2 5 ≤ T j ≤ 1 40 o C 2 5 ≤ T j ≤ 1 40 o C L = 1 mH Min. 5 5 5 2 0.05 0.1 -7 Typ. 10 15 15 6 0.15 0.4 -4 Max. 20 45 30 15 0.5 2 2 4 -2 Unit µs µs µs µs A/ µ s A/ µ s A/ µ s A/ µ s V LOGIC INPUT Symbol V IL VIH V I(hyst.) I IN V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage V IN = 5 V I IN = 1 0 mA I IN = - 10 mA 5.5 2 0.5 250 6 -0.7 500 -0.3 Test Conditions Min. Typ. Max. 0.8 (*) Unit V V V µA V V 3/8 VN02HSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol V STAT (• ) V USD V SCL ( •) t SC Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Switch-off Time in Short Circuit Condition at Start-Up Over Current Average Current in Short Circuit Open Load Current Level Leakage Current Thermal Shut-down Temperature Reset Temperature I STAT = 1 0 mA I STAT = -10 mA R LOAD < 1 0 m Ω T c = 25 o C R LOAD < 1 0 m Ω R LOAD < 1 0 m Ω T c = 85 o C 9 < VCC < 3 2 V Off State V OUT = 0 V 140 125 160 145 V CC = 1 3 V Test Conditions I STAT = 1.6 mA 2.5 5.5 6 -0.7 1.5 Min. Typ. Max. 0.4 5 Unit V V V V ms -0.3 5 I OV I AV I OL I OUT T TSD TR V CC = 1 3 V V CC = 1 3 V 5 0.9 28 1.8 70 60 A A mA µA o C C o (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determination > 100 ms after the switching edge. Note 1 : Above VCC = 36 V the output voltage is clamped to 36 V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to 4/8 insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN02HSP TRUTH TABLE INPUT Normal Operation Open Circuit (No Load) Over-temperature Under-voltage L H L H L H L H OUTPUT L H L H L H L L DIAGNOSTIC H H H L H L H H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/8 VN02HSP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/8 VN02HSP PowerSO-10 MECHANICAL DATA DIM. MIN. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q α 0o 1.20 1.70 8o 1.25 13.80 0.50 1.80 0.047 0.067 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 1.27 1.35 14.40 0.049 0.543 0.002 0.071 mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 0.050 0.053 0.567 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 B 0.10 A B 10 = = 6 = = H = E = = E2 E3 E1 = E4 = = A 1 5 = SEATING PLANE DETAIL "A" Q e 0.25 M B C D h = A F A1 = D1 = = SEATING PLANE = A1 L DETAIL "A" α 0068039-C 7/8 VN02HSP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 8/8