VNB49N04

® VNP49N04FI / VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP49N04FI VNB49N04 VNV49N04 n n n n n n VCLAMP 42 V R DS(ON) 20 mΩ ILIM 49 A ISOWATT220 3 1 2 n n LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET 10 3 1 1 TO-263 (D2PAK) PowerSO-10TM ORDER CODES: ISOWATT220 PowerSO-10 TM TO-263 (D2PAK) VNP49N04FI VNV49N04 VNB49N04 n DESCRIPTION The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology, intended for replacement of standard Power BLOCK DIAGRAM MOSFETS from DC up to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN Overvoltage Clamp INPUT Gate Control Linear Current Limiter Over Temperature Status SOURCE October 1999 1/14 1 VNP49N04FI / VNB49N04 / VNV49N04 ABSOLUTE MAXIMUM RATING Symbol VDS VIN ID IR VESD P tot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Total Dissipation at Tc=25° C Operating Junction Temperature Case Operating Temperature Storage Temperature Value D2PAK ISOWATT220 PowerSO-10TM Internally Clamped 18 Internally Limited -50 2000 125 125 40 Internally limited Internally limited -55 to 150 Unit V V A A V W °C °C °C CONNECTION DIAGRAM (TOP VIEW) INPUT INPUT INPUT INPUT INPUT 6 7 8 9 10 11 5 4 3 2 1 SOURCE SOURCE N.C. SOURCE SOURCE 3 2 1 SOURCE DRAIN INPUT DRAIN PowerSO-10 TM D2PAK 3 2 1 SOURCE DRAIN INPUT ISOWATT220 2/14 1 VNP49N04FI / VNB49N04 / VNV49N04 THERMAL DATA Symbol Rthj-case R thj-amb Parameter Thermal Resistance Junction-case}}} Thermal Resistance Junction-ambient MAX MAX PowerSO-10 1 50 Value D2PAK 1 62.5 ISOWATT220 3.12 62.5 Unit ° C/W ° C/W ELECTRICAL CHARACTERISTICS (-40°C < Tj < 125°C, unless otherwise specified) OFF Symbol VCLAMP VCLTH V INCL IDSS IISS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input-Source Reverse Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Condit ions ID=200 mA; VIN=0 ID=2mA; VIN=0 IIN= -1mA V DS=13V; VIN=0V V DS=25V; VIN=0V 250 Min 34 33 -1.2 -0.1 70 220 550 Typ 42 Max 50 Unit V V V µA µA µA Supply Current from Input V DS=0V; VIN=10V Pin ON (*) Symbol VIN(th) R DS(on) Parameter Input Threshold Voltage Static Drain-source On Resistance Test Condit ions V DS=VIN; ID + IIN=1mA V IN=10V; ID=25A V IN=5V; ID=25A Min 0.8 Typ Max 3 0.04 0.05 Unit V Ω Ω DYNAMIC Symbol gfs (*) C OSS Parameter Forward Transconductance Output Capacitance Test Condit ions VDS =13V; ID=25A; Tc=25°C VDS =13V; f=1MHz; VIN=0V; Tc=25°C Min 25 Typ 30 1100 1500 Max Unit S pF SWITCHING (**) Symbol td(on) tr td(off) tf td(on) tr td(off) tf (di/dt) on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDS =15V; ID=25A Vgen=10V; Rgen=10 Ω (see figure 3) VDS =15V; ID=25A Vgen=10V; Rgen=1000 Ω (see figure 3) VDS =15V; ID=25A VIN=10V; Rgen=10 Ω VDS =15V; ID=25A; VIN=10V Min Typ 200 1300 800 300 1.3 3.8 12 6.1 25 100 Max 600 3600 2400 900 3.8 10.4 24 17 Unit ns ns ns ns µs µs µs µs A/µs nC 3/14 1 VNP49N04FI / VNB49N04 / VNV49N04 SOURCE DRAIN DIODE Symbol VSD (*) trr (**) Q rr (**) IRRM (**) Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions I SD=25A; VIN=0V I SD=25A; di/dt=100A/µs Min Typ 250 910 7.5 Max 1.8 Unit V ns nC A V DS=30V; Tj=25°C Reverse Recovery Current (see test circuit, figure 5) PROTECTIONS Symbol ILIM tdlim (**) Tjsh (**) Tjrs (**) Igf (**) Eas (**) Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy V IN=10V; VDS=13V V IN=5V; VDS=13V Starting Tj=25°C; VDS=20V V IN=10V; Rgen=1KΩ; L=6mH Test Conditions V IN=10V; VDS=13V V IN=5V; VDS=13V V IN=10V V IN=5V 150 135 50 20 4 Min 28 28 Typ 49 49 35 90 Max 70 70 50 150 Unit A A µs µs °C °C mA mA J (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% (**) Parameters guaranteed by design/characterization 4/14 2 VNP49N04FI / VNB49N04 / VNV49N04 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C. - STATUS FEEDBACK: in the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100Ω. T he failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(ON)). 5/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Thermal Impedance for ISOWATT220 Thermal Impedance for D2PAK / PowerSO-10 Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage 6/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Temperature Threshold Voltage vs Normalized On Resistance vs Temperature 7/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 8/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 9/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Time Test Circuits for Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit for Inductive Load Switching and Diode Recovery Times Fig. 6: Waveforms 10/14 1 VNP49N04FI / VNB49N04 / VNV49N04 ISOWATT220 MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 15.9 9 3 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 A B L3 L6 L7 F1 ¯ F D G1 E H F2 123 L2 L4 G 11/14 1 VNP49N04FI / VNB49N04 / VNV49N04 TO-263 (D2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 B B2 C C2 D E G L L2 L3 4.30 2.49 0.70 1.25 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP MAX. 4.60 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.4 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.625 0.055 0.068 inch D A C A2 DETAIL ”A” A1 B2 B G C2 DETAIL ”A” E L2 L L3 12/14 VNP49N04FI / VNB49N04 / VNV49N04 PowerSO-10™ MECHANICAL DATA DIM. A A1 B c D D1 E E1 E2 E3 E4 e F H h Q α 0º 1.25 13.80 0.50 1.70 8º mm. MIN. 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 1.27 1.35 14.40 0.049 0.543 0.002 0.067 TYP MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 0.050 0.053 0.567 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 300 0.250 0.240 B 0.10 A B 10 = H = A F A1 = 6 = = = E = 1 5 = E2 E3 E1 E4 = = = = SEATING PLANE DETAIL ”A” Q e 0.25 M B A C D h = D1 = = = SEATING PLANE A1 L DETAIL ”A” α 13/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . http://www.st.com 14/14