VND10B012Y

VND10B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VND10B s V DSS 40 V R DS( on) 0.1 Ω I n (*) 3.4 A VC C 26 V s s s s s s OUTPUT CURRENT (CONTINUOUS): 14 A @ Tc=85oC PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION HEPTAWATT (vertical) HEPTAWATT (horizontal) DESCRIPTION The VND10B is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit. The status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to VCC. BLOCK DIAGRAM HEPTAWATT (in-line) ORDER CODES: HEPTAWATT vertical VND10B HEPTAWATT horizontal VND10B (011Y) HEPTAWATT in-line VND10B (012Y) (*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1) September 1994 1/11 VND10B ABSOLUTE MAXIMUM RATING Symbol V( BR)DSS IO UT IR II N -V CC ISTA T VE SD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) at T c = 85 C Reverse Output Current at T c = 85 C Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c = 25 C Junction Operating Temperature Storage Temperature o o o Value 40 14 14 -14 ± 10 -4 ± 10 2000 75 -40 to 150 -55 to 150 Unit V A A A mA V mA V W o o I OU T(RMS) RMS Output Current at T c = 85 o C and f > 1Hz C C CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS 2/11 VND10B THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.65 60 o o C/W C/W ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol VC C In(*) R on IS V DS(MAX) Ri Parameter Supply Voltage Nominal Current On State Resistance Supply Current Output to GND internal Impedance T c = 85 C V DS( on) ≤ 0.5 V CC = 13 V o o Test Conditions Min. 6 3.4 0.065 Typ. 13 Max. 26 5.2 0.1 Unit V A Ω µA V KΩ I OU T = I n V CC = 13 V Off State T j = 25 C o Tj = 25 C VCC = 13 V V CC = 13 V T j = 25 o C Tj = 85 o C 35 1.2 5 10 100 2 20 Maximum Voltage Drop I OU T = 13 A SWITCHING Symbol td(on) (^) t r (^) td( off)(^) tf (^) (di/dt) on (di/dt) off Parameter Test Conditions Min. 5 28 10 28 0.003 0.005 Typ. 35 110 140 75 Max. 200 360 500 360 0.1 0.1 Unit µs µs µs µs A/ µ s A/ µ s Turn-on Delay Time Of R out = 2.7 Ω Output Current Rise Time Of Output Current R out = 2.7 Ω Turn-off Delay Time Of R out = 2.7 Ω Output Current Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope R out = 2.7 Ω R out = 2.7 Ω R out = 2.7 Ω LOGIC INPUT Symbol V IL V IH V I(hy st.) II N V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage V IN = 5 V T j = 25 oC 5 I IN = 10 mA I IN = -10 mA 3.5 0.2 0.9 30 6 -0.7 Test Conditions Min. Typ. Max. 1.5 (• ) 1.5 100 7 Unit V V V µA V V 3/11 VND10B ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol V STAT V US D V SCL TTS D T SD( hys t. ) TR V OL I OL tpovl tpol Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Thermal Shut-down Temperature Thermal Shut-down Hysteresis Reset Temperature Open Voltage Level Open Load Current Level Status Delay Status Delay Off-State (note 2) On-State (note 3) (note 3) 50 125 2.5 0.6 4 0.9 5 500 5 1.4 10 2500 I STAT = 10 mA I STAT = -10 mA Test Conditions I STAT = 1.6 mA 3.5 5 140 4.5 6 -0.7 160 Min. Typ. Max. 0.4 6 7 180 50 Unit V V V V o C C C o o V A µs µs (*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1) (^) See switching time waveform ( •) The VI H is internally clamped at 6V about. It is possible to connect this pin to an higher voltage vi a an external resistor cal culated to not exceed 10 mA at the i nput pin. note 1: The Nominal Current is the current at T c = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V note 2: IOL( of f) = (VCC -VOL )/R OL note 3: tpo vl tpol : ISO definiti on Note 2 Relevant Figure Note 3 Relevant Figure 4/11 VND10B Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a common diagnostic output for both channels which indicates open load in on-state, open load in off-state, over temperature conditions and stuck-on to VCC. From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two Power MOS areas. This positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage. The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed VCC, Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with VCC not exceeding 16V, both channel will switch off. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 2 (GND) and ground, as shown in the typical application circuit (fig. 2). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). – The undervoltage shutdown level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to the device ground (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/11 VND10B TRUTH TABLE INPUT 1 Normal Operation L H L H X INPUT 2 L H H L X X H X L H L X L H L OUTPUT 1 OUTPUT 2 L H L H L L X H L X L H H X L L H H L L X L X L H L X L H H DIAGNOSTIC H H H H H L L L L(**) L L(**) L L L L Under-voltage Thermal Shutdown Channel 1 Channel 2 Channel 1 Channel 2 H X H L X L H L X L Open Load Output Shorted to VC C Channel 1 Channel 2 Figure 1: Waveforms 6/11 VND10B Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 3: Typical Application Circuit With Separate Signal Ground 7/11 VND10B Heptawatt (vertical) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 mm TYP. inch TYP. MIN. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 2.54 5.08 7.62 MAX. 4.8 1.37 2.8 1.35 0.55 0.8 0.9 2.67 5.21 7.8 10.4 10.4 MIN. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300 MAX. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 3 15.8 6.6 0.102 0.594 0.236 0.110 0.200 0.118 0.622 0.260 P023A 8/11 VND10B Heptawatt (horizontal) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 L9 Dia mm TYP. inch TYP. MIN. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 14.2 4.4 15.8 5.1 2.6 15.1 6 4.44 3.65 2.54 5.08 7.62 MAX. 4.8 1.37 2.8 1.35 0.55 0.8 0.9 2.67 5.21 7.8 10.4 10.4 MIN. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.559 0.173 0.622 0.201 0.100 0.200 0.300 MAX. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 3 15.8 6.6 3.85 0.102 0.594 0.236 0.175 0.144 0.118 0.622 0.260 0.152 P023B 9/11 VND10B Heptawatt (In-Line) MECHANICAL DATA DIM. MIN. A C D D1 E F F1 G G1 G2 H2 H3 L2 L3 L5 L6 L7 Dia 10.05 22.4 25.4 2.6 15.1 6 3.65 2.41 4.91 7.49 2.54 5.08 7.62 2.4 1.2 0.35 0.6 mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 0.8 0.9 2.67 5.21 7.8 10.4 10.4 22.9 26 3 15.8 6.6 3.85 0.396 0.882 1.000 0.102 0.594 0.236 0.144 0.095 0.193 0.295 0.100 0.200 0.300 0.094 0.047 0.014 0.024 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 0.902 1.024 0.118 0.622 0.260 0.152 P023C 10/11 VND10B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11