VND810TR-E

VND810-E DOUBLE CHANNEL HIGH SIDE DRIVER Table 1. General Features Type VND810-E Figure 1. Package RDS(on) Iout VCC 160 mΩ (*) 3.5A (*) 36 V ) s ( ct (*) Per each channel CMOS COMPATIBLE INPUTS ■ OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ PROTECTION AGAINST LOSS OF GROUND ■ VERY LOW STAND-BY CURRENT ■ REVERSE BATTERY PROTECTION (**) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE ■ ) (s u d o r P e t e l o s b O t c u DESCRIPTION The VND810-E is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). od r P e SO-16 Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection. t e l o s b O Table 2. Order Codes Package SO-16 Tube VND810-E Tape and Reel VND810TR-E Note: (**) See application schematic at page 9 Rev. 1 October 2004 1/20 VND810-E Figure 2. Block Diagram Vcc Vcc CLAMP OVERVOLTAGE UNDERVOLTAGE GND CLAMP 1 OUTPUT1 INPUT1 DRIVER 1 CLAMP 2 STATUS1 CURRENT LIMITER 1 ) s ( ct DRIVER 2 LOGIC OVERTEMP. 1 OUTPUT2 OPENLOAD ON 1 u d o CURRENT LIMITER 2 INPUT2 OPENLOAD OFF 1 OPENLOAD ON 2 r P e STATUS2 OPENLOAD OFF 2 t e l o OVERTEMP. 2 Table 3. Absolute Maximum Ratings Symbol )- s ( t c DC Supply Voltage VCC Value Unit 41 V - VCC Reverse DC Supply Voltage - 0.3 V - IGND DC Reverse Ground Pin Current - 200 mA Pr Internally Limited A -6 A DC Input Current +/- 10 mA DC Status Current +/- 10 mA 4000 V 4000 V 5000 V 5000 V (L=1.5mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=5A) 26 mJ Power Dissipation TC=25°C 8.3 W Internally Limited °C u d o IOUT DC Output Current - IOUT Istat o s b VESD Reverse DC Output Current e t e l IIN O Parameter s b O Electrostatic Discharge R=1.5KΩ; C=100pF) (Human Body Model: - INPUT - STATUS - OUTPUT - VCC Maximum Switching Energy EMAX Ptot Tj Junction Operating Temperature Tc Case Operating Temperature - 40 to 150 °C Storage Temperature - 55 to 150 °C Tstg 2/20 VND810-E Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins VCC 1 VCC 16 VCC N.C. GND OUTPUT 1 INPUT 1 OUTPUT 1 STATUS 1 STATUS 2 OUTPUT 2 OUTPUT 2 VCC INPUT 2 VCC 8 Connection / Pin Status Floating X To Ground VCC 9 N.C. X X Output X Input X Through 10KΩ resistor u d o r P e Figure 4. Current and Voltage Conventions t e l o IIN1 ) (s INPUT 1 ISTAT1 VIN1 s b O STATUS 1 IIN2 VSTAT1 ct du o r P e t e l VF1 (*) VCC IOUT1 OUTPUT 1 VOUT1 IOUT2 OUTPUT 2 VSTAT2 IS VCC INPUT 2 VIN2 ISTAT2 STATUS 2 ) s ( ct VOUT2 GND IGND o s b O (*) VFn = VCCn - VOUTn during reverse battery condition Table 4. Thermal Data Symbol Rthj-lead Rthj-amb Parameter Thermal Resistance Junction-lead Thermal Resistance Junction-ambient Value 15 77 (1) 57 (2) Unit °C/W °C/W Note: 1. When mounted on a standard single-sided FR-4 board with 0.5cm 2 of Cu (at least 35µm thick) connected to all V CC pins. Horizontal mounting and no artificial air flow. Note: 2. When mounted on a standard single-sided FR-4 board with 4cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. 3/20 VND810-E ELECTRICAL CHARACTERISTICS (8V VOL let o s b O 6/20 ete u d o Pr SENSE H H l o s H (Tj < TTSD) H (Tj > TTSD) L L L H L L L X X L L H H L H H H L H L H L H H L ) (s t c u d o r P e Output Current < IOL tSDL L H b O L X X VND810-E Figure 6. Switching Time Waveforms VOUTn 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% ) s ( t t VINn td(on) c u d td(off) e t e ol ) (s o r P t s b O Table 13. Electrical Transient Requirements On V CC Pin ISO T/R 7637/1 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E od -25 V +25 V -25 V +25 V -4 V +26.5 V r P e t e l o s b O t c u I Test Pulse I C C C C C C II TEST LEVELS III IV -50 V +50 V -50 V +50 V -5 V +46.5 V -75 V +75 V -100 V +75 V -6 V +66.5 V -100 V +100 V -150 V +100 V -7 V +86.5 V TEST LEVELS RESULTS II III C C C C C C C C C C E E Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. 7/20 VND810-E Figure 7. Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn ) s ( ct UNDERVOLTAGE VCC VUSDhyst VUSD u d o INPUTn OUTPUT VOLTAGEn STATUSn t e l o OVERVOLTAGE VCCVOV s b O OPEN LOAD with external pull-up d o r INPUTn OUTPUT VOLTAGEn P e STATUSn t e l o bs O VOUT>VOL VOL OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj TTSD TR INPUTn OUTPUT CURRENTn STATUSn 8/20 r P e undefined VND810-E Figure 8. Application Schematic +5V +5V +5V VCC Rprot STATUS1 Dld µC Rprot INPUT1 ) s ( ct OUTPUT1 Rprot STATUS2 Rprot u d o r P e INPUT2 let GND o s b RGND VGND OUTPUT2 DGND O ) GND PROTECTION REVERSE BATTERY u d o s ( t c NETWORK r P e AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in RGND (when VCC