VND810-E
DOUBLE CHANNEL HIGH SIDE DRIVER
Table 1. General Features
Type
VND810-E
Figure 1. Package
RDS(on)
Iout
VCC
160 mΩ (*)
3.5A (*)
36 V
)
s
(
ct
(*) Per each channel
CMOS COMPATIBLE INPUTS
■ OPEN DRAIN STATUS OUTPUTS
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ PROTECTION AGAINST LOSS OF GROUND
■ VERY LOW STAND-BY CURRENT
■
REVERSE BATTERY PROTECTION (**)
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
■
)
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DESCRIPTION
The VND810-E is a monolithic device designed in
STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground.
Active V CC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table).
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SO-16
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects open
load condition both in on and off state. Output
shorted to VCC is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.
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Table 2. Order Codes
Package
SO-16
Tube
VND810-E
Tape and Reel
VND810TR-E
Note: (**) See application schematic at page 9
Rev. 1
October 2004
1/20
VND810-E
Figure 2. Block Diagram
Vcc
Vcc
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
GND
CLAMP 1
OUTPUT1
INPUT1
DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
)
s
(
ct
DRIVER 2
LOGIC
OVERTEMP. 1
OUTPUT2
OPENLOAD ON 1
u
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o
CURRENT LIMITER 2
INPUT2
OPENLOAD OFF 1
OPENLOAD ON 2
r
P
e
STATUS2
OPENLOAD OFF 2
t
e
l
o
OVERTEMP. 2
Table 3. Absolute Maximum Ratings
Symbol
)-
s
(
t
c
DC Supply Voltage
VCC
Value
Unit
41
V
- VCC
Reverse DC Supply Voltage
- 0.3
V
- IGND
DC Reverse Ground Pin Current
- 200
mA
Pr
Internally Limited
A
-6
A
DC Input Current
+/- 10
mA
DC Status Current
+/- 10
mA
4000
V
4000
V
5000
V
5000
V
(L=1.5mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC;
IL=5A)
26
mJ
Power Dissipation TC=25°C
8.3
W
Internally Limited
°C
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d
o
IOUT
DC Output Current
- IOUT
Istat
o
s
b
VESD
Reverse DC Output Current
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IIN
O
Parameter
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b
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Electrostatic Discharge
R=1.5KΩ; C=100pF)
(Human
Body
Model:
- INPUT
- STATUS
- OUTPUT
- VCC
Maximum Switching Energy
EMAX
Ptot
Tj
Junction Operating Temperature
Tc
Case Operating Temperature
- 40 to 150
°C
Storage Temperature
- 55 to 150
°C
Tstg
2/20
VND810-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
VCC
1
VCC
16
VCC
N.C.
GND
OUTPUT 1
INPUT 1
OUTPUT 1
STATUS 1
STATUS 2
OUTPUT 2
OUTPUT 2
VCC
INPUT 2
VCC
8
Connection / Pin Status
Floating
X
To Ground
VCC
9
N.C.
X
X
Output
X
Input
X
Through 10KΩ resistor
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Figure 4. Current and Voltage Conventions
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IIN1
)
(s
INPUT 1
ISTAT1
VIN1
s
b
O
STATUS 1
IIN2
VSTAT1
ct
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l
VF1 (*)
VCC
IOUT1
OUTPUT 1
VOUT1
IOUT2
OUTPUT 2
VSTAT2
IS
VCC
INPUT 2
VIN2 ISTAT2
STATUS 2
)
s
(
ct
VOUT2
GND
IGND
o
s
b
O
(*) VFn = VCCn - VOUTn during reverse battery condition
Table 4. Thermal Data
Symbol
Rthj-lead
Rthj-amb
Parameter
Thermal Resistance Junction-lead
Thermal Resistance Junction-ambient
Value
15
77 (1)
57 (2)
Unit
°C/W
°C/W
Note: 1. When mounted on a standard single-sided FR-4 board with 0.5cm 2 of Cu (at least 35µm thick) connected to all V CC pins. Horizontal
mounting and no artificial air flow.
Note: 2. When mounted on a standard single-sided FR-4 board with 4cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
3/20
VND810-E
ELECTRICAL CHARACTERISTICS
(8V VOL
let
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6/20
ete
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Pr
SENSE
H
H
l
o
s
H
(Tj < TTSD) H
(Tj > TTSD) L
L
L
H
L
L
L
X
X
L
L
H
H
L
H
H
H
L
H
L
H
L
H
H
L
)
(s
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Output Current < IOL
tSDL
L
H
b
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L
X
X
VND810-E
Figure 6. Switching Time Waveforms
VOUTn
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
10%
)
s
(
t
t
VINn
td(on)
c
u
d
td(off)
e
t
e
ol
)
(s
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Table 13. Electrical Transient Requirements On V CC Pin
ISO T/R 7637/1
1
2
3a
3b
4
5
ISO T/R 7637/1
Test Pulse
1
2
3a
3b
4
5
CLASS
C
E
od
-25 V
+25 V
-25 V
+25 V
-4 V
+26.5 V
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I
Test Pulse
I
C
C
C
C
C
C
II
TEST LEVELS
III
IV
-50 V
+50 V
-50 V
+50 V
-5 V
+46.5 V
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5 V
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5 V
TEST LEVELS RESULTS
II
III
C
C
C
C
C
C
C
C
C
C
E
E
Delays and
Impedance
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
IV
C
C
C
C
C
E
CONTENTS
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
7/20
VND810-E
Figure 7. Waveforms
NORMAL OPERATION
INPUTn
OUTPUT VOLTAGEn
STATUSn
)
s
(
ct
UNDERVOLTAGE
VCC
VUSDhyst
VUSD
u
d
o
INPUTn
OUTPUT VOLTAGEn
STATUSn
t
e
l
o
OVERVOLTAGE
VCCVOV
s
b
O
OPEN LOAD with external pull-up
d
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r
INPUTn
OUTPUT VOLTAGEn
P
e
STATUSn
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o
bs
O
VOUT>VOL
VOL
OPEN LOAD without external pull-up
INPUTn
OUTPUT VOLTAGEn
STATUSn
OVERTEMPERATURE
Tj
TTSD
TR
INPUTn
OUTPUT CURRENTn
STATUSn
8/20
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VND810-E
Figure 8. Application Schematic
+5V +5V
+5V
VCC
Rprot
STATUS1
Dld
µC
Rprot
INPUT1
)
s
(
ct
OUTPUT1
Rprot
STATUS2
Rprot
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P
e
INPUT2
let
GND
o
s
b
RGND
VGND
OUTPUT2
DGND
O
)
GND PROTECTION
REVERSE BATTERY
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NETWORK
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AGAINST
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / IS(on)max.
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC
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