BYG23T-M3/TR3

BYG23T-M3 www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Avalanche SMD Rectifiers FEATURES • Glass passivated pellet chip junction • Low profile package • Ideal for automated placement • Low reverse current • High reverse voltage • Ultra fast reverse recovery time SMA (DO-214AC) Cathode Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES 3D 3D MECHANICAL DATA 3D Models PRIMARY CHARACTERISTICS Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade IF(AV) 1.0 A VRRM 1300 V IFSM 18 A Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test trr 75 ns Polarity: color band denotes the cathode end ER 5 mJ VF at IF = 1.0 A (TA = 125 °C) 1.39 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configurations Single per TYPICAL APPLICATIONS For use in high voltage, high frequency rectification specially suited for freewheeling, clamping, snubbering in power supply, ignition drive of HID, UHP and industrial ballast and snubber for PDP TV power supply application. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG23T UNIT BYG23T 1300 V Maximum DC forward current (fig.1) IF (1) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 18 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 0.4 A, TL = 25 °C ER 5 mJ Maximum operating junction temperature TJ 150 °C TSTG -55 to +150 °C Maximum repetitive peak reverse voltage Storage temperature range VRRM Note • Free air, mounted on recommended copper pad area Revision: 25-Feb-2020 Document Number: 89429 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C Instantaneous forward voltage (1) IF = 1.0 A Reverse current (2) VR = 1300 V Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Forward recovery time Peak forward voltage IF = 1.5 A, dI/dt = 12 A/μs, VF = 1.1 x VF max. Typical junction capacitance 4.0 V, 1 MHz VF TA = 125 °C TA = 25 °C TA = 25 °C TA = 25 °C MAX. 1.74 1.9 1.39 1.65 UNIT V - 5.0 2.9 50 trr 65 75 tfr 620 - VFP 9.0 - V CJ 9.0 - pF IR TA = 125 °C TYP. μA ns Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG23T RθJA 120 RθJM 20 Typical thermal resistance (1) UNIT °C/W Note (1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R θJA - junction to ambient, RθJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG23T-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG23T-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel Revision: 25-Feb-2020 Document Number: 89429 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 1.2 0.8 0.6 0.4 TM - Measured at the Lead terminal 0.2 0 0 25 50 75 100 125 150 Tj = 150 °C 10 Tj = 125 °C 1000 1 Tj = 25 °C 0.1 100 0.01 Tj = -40 °C 0.001 10 0.0001 175 10 TM - Mount Temperature (°C) Junction Capacitance (pF) Average Power Loss (W) D = 0.2 D = 1.0 D = 0.1 1.0 0.8 T 0.6 0.4 0.2 D = tp/T 0.1 1 1000 Tj = 25 °C 1 100 Tj = -40 °C 0.1 10 2.4 2.8 3.2 3.6 4.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 2nd line Tj = 150 °C 2.0 10 100 Fig. 5 - Typical Junction Capacitance 10 1.6 100 Reverse Voltage (V) 10000 1.2 90 10 Fig. 2 - Forward Power Loss Characteristics 0.8 80 TJ = 25 °C f = 1.0 MHz Vstg = 50 mVp-p Average Forward Current (A) 0.4 70 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Tj = 125 °C 60 tp 0 0 50 D = 0.8 1.4 1.2 40 Fig. 4 - Typical Reverse Characteristics D = 0.3 1.6 30 100 D = 0.5 1.8 20 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Max. Forward Current Derating Curve 2.0 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) 1.0 DC Forward Current (A) 10000 100 1000 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 25-Feb-2020 Document Number: 89429 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 25-Feb-2020 Document Number: 89429 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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