FEP30-CP

FEP30xP-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency 3 • Low thermal resistance 2 1 • High forward surge capability TO-3P (TO-247AD) PIN 1 PIN 2 PIN 3 CASE • Solder dip 260 °C, 40 s • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 50 V, 100 V, 150 V, 200 V, 300 V, 400 V, 500 V, 600 V IFSM 300 A MECHANICAL DATA trr 35 ns, 50 ns VF at IF = 15 A 0.95 V, 1.3 V, 1.5 V TJ max. 150 °C Package TO-3P (TO-247AD) Circuit configuration Common cathode Case: TO-3P (TO-247AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V 50 100 150 200 300 400 500 600 V Maximum DC blocking voltage VDC Maximum average forward rectified current at TC = 100 °C IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A TJ, TSTG -55 to +150 °C/W Operating storage and temperature range Revision: 27-May-2020 Document Number: 88597 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP30xP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST SYMBOL CONDITIONS PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage  per diode 15.0 A FEP 30AP FEP 30BP VF TC = 25 °C FEP 30CP FEP 30DP FEP 30FP 0.95 FEP 30GP FEP 30HP 1.3 FEP 30JP 1.5 UNIT V 10 IR TC = 100 °C Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance per diode 4.0 V, 1 MHz CJ μA 500 35 50 175 ns 145 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP 30AP FEP 30BP FEP 30CP FEP 30DP RJC (1) Typical thermal resistance per diode FEP 30FP FEP 30GP FEP 30HP FEP 30JP 1.0 UNIT °C/W Note (1) Thermal resistance from junction to case per diode mounted on heatsink ORDERING INFORMATION (Example) PACKAGE TO-247AD PREFERRED P/N FEP30JP-E3/45 UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 6.15 30 30/tube Tube Revision: 27-May-2020 Document Number: 88597 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP30xP-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Instantaneous Reverse Current (μA) 36 Average Forward Current (A) Resistive or Inductive Load 30 24 12 6 0 10 TJ = 100 °C 1 0.1 TJ = 25 °C 50 100 10 150 20 30 40 50 60 70 80 90 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 300 1000 TC = 100 °C 8.3 ms Single Half Sine-Wave 250 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 100 0.01 0 200 150 100 50 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 50 V to 400 V 500 V to 600 V 10 1 10 100 0.1 Number of Cycles at 60 Hz 100 Pulse Width = 300 μs 1 % Duty Cycle TJ = 125 °C 10 TJ = 25 °C 1 50 V to 200 V 300 V to 400 V 500 V to 600 V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Current (A) 50 V to 200 V 300 V to 600 V 1.6 1.8 Fig. 5 - Typical Junction Capacitance Per Diode                 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Revision: 27-May-2020 Document Number: 88597 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP30xP-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3P (TO-247AD) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Revision: 27-May-2020 Document Number: 88597 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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