GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
Single-Line ESD Protection in SOT-23
FEATURES
• Single-line ESD protection device
3
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
1
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
2
20512
20421
1
MARKING (example only)
• Space saving SOT-23 package
• e3 - Sn
YYY
XX
XX
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
20357
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
Models
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART
RoHS-COMPLIANT +
NUMBER
TIN
AEC-Q101
LEAD (Pb)-FREE
(EXAMPLE) QUALIFIED
PLATED
STANDARD
GREEN
GSOT05E
3
GSOT05G
3
GSOT05H
E
3
GSOT05H
G
3
GSOT05E
3
GSOT05G
3
GSOT05H
E
3
GSOT05H
G
3
PACKAGING CODE
3K PER 7" REEL
(8 mm TAPE),
15K/BOX = MOQ
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
-08
-08
-08
-08
-18
-18
-18
-18
ORDERING CODE
(EXAMPLE)
GSOT05-E3-08
GSOT05-G3-08
GSOT05-HE3-08
GSOT05-HG3-08
GSOT05-E3-18
GSOT05-G3-18
GSOT05-HE3-18
GSOT05-HG3-18
PACKAGE DATA
DEVICE
NAME
GSOT03
GSOT04
GSOT05
GSOT08
GSOT12
GSOT15
GSOT24
GSOT36
MOLDING
PACKAGE TYPE ENVIRONMENTAL
COMPOUND
WEIGHT
NAME
CODE
STATUS
FLAMMABILITY
RATING
03
Standard
8.8 mg
SOT-23
UL 94 V-0
03G
Green
8.1 mg
04
Standard
8.8 mg
SOT-23
UL 94 V-0
04G
Green
8.1 mg
05
Standard
8.8 mg
SOT-23
UL 94 V-0
05G
Green
8.1 mg
08
Standard
8.8 mg
SOT-23
UL 94 V-0
08G
Green
8.1 mg
12
Standard
8.8 mg
SOT-23
UL 94 V-0
12G
Green
8.1 mg
15
Standard
8.8 mg
SOT-23
UL 94 V-0
15G
Green
8.1 mg
24
Standard
8.8 mg
SOT-23
UL 94 V-0
24G
Green
8.1 mg
36
Standard
8.8 mg
SOT-23
UL 94 V-0
36G
Green
8.1 mg
Rev. 2.8, 17-Apr-2019
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Document Number: 85807
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT03
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
30
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
369
W
± 30
kV
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
30
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
429
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT04
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
30
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
480
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT05
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
18
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
345
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT08
PARAMETER
ESD immunity
Operating temperature
Storage temperature
Rev. 2.8, 17-Apr-2019
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
Document Number: 85807
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT12
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
12
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
312
W
± 30
kV
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
8
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
230
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT15
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
5
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
235
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT24
PARAMETER
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
IPPM
3.5
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
PPP
248
W
± 30
kV
Operating temperature
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT36
PARAMETER
ESD immunity
Operating temperature
Storage temperature
Rev. 2.8, 17-Apr-2019
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
± 30
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
Document Number: 85807
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).
L1
3
1
BiAs
2
Ground
20422
ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
3.3
V
Reverse voltage
at IR = 100 μA
VR
3.3
-
-
V
Reverse current
at VR = 3.3 V
IR
-
-
100
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
4
4.6
5.5
V
-
5.7
7.5
V
-
10
12.3
V
-
1
1.2
V
Protection paths
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
VC
VF
CD
-
4.5
-
V
-
420
600
pF
-
260
-
pF
ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
4
V
at IR = 20 μA
VR
4
-
-
V
Reverse current
at VR = 4 V
IR
-
-
20
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
5
6.1
7
V
-
7.5
9
V
-
11.2
14.3
V
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
Rev. 2.8, 17-Apr-2019
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2 V; f = 1 MHz
VC
VF
CD
-
1
1.2
-
4.5
-
V
-
310
450
pF
-
200
-
pF
Document Number: 85807
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT05 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
5
V
at IR = 10 μA
VR
5
-
-
V
Reverse current
at VR = 5 V
IR
-
-
10
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
6
6.8
8
V
-
7
8.7
V
-
12
16
V
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 30 A
at IPP = 1 A
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
VC
VF
CD
-
1
1.2
-
4.5
-
V
-
260
350
pF
-
150
-
pF
ELECTRICAL CHARACTERISTICS GSOT08 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
8
V
at IR = 5 μA
VR
8
-
-
V
Reverse current
at VR = 8 V
IR
-
-
5
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
9
10
11
V
-
10.7
13
V
-
15.2
19.2
V
-
1
1.2
V
-
3
-
V
-
160
250
pF
-
80
-
pF
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 18 A
at IPP = 1 A
at IPP = IPPM = 18 A
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
VC
VF
CD
ELECTRICAL CHARACTERISTICS GSOT12 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
12
V
Reverse voltage
at IR = 1 μA
VR
12
-
-
V
Reverse current
at VR = 12 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
13.5
15
16.5
V
-
15.4
18.7
V
-
21.2
26
V
-
1
1.2
V
Protection paths
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Rev. 2.8, 17-Apr-2019
at IPP = 1 A
at IPP = IPPM = 12 A
at IPP = 1 A
at IPP = IPPM = 12 A
at VR = 0 V; f = 1 MHz
at VR = 6 V; f = 1 MHz
VC
VF
CD
-
2.2
-
V
-
115
150
pF
-
50
-
pF
Document Number: 85807
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT15 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
15
V
Reverse voltage
at IR = 1 μA
VR
15
-
-
V
Reverse current
at VR = 15 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
16.5
18
20
V
Protection paths
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 8 A
at IPP = 1 A
at IPP = IPPM = 8 A
at VR = 0 V; f = 1 MHz
at VR = 7.5 V; f = 1 MHz
VC
VF
CD
-
19.4
23.5
V
-
24.8
28.8
V
-
1
1.2
V
-
1.8
-
V
-
90
120
pF
-
35
-
pF
ELECTRICAL CHARACTERISTICS GSOT24 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
24
V
Reverse voltage
at IR = 1 μA
VR
24
-
-
V
Reverse current
at VR = 24 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
27
30
33
V
-
34
41
V
-
41
47
V
V
Protection paths
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at IPP = 1 A
at IPP = IPPM = 5 A
at IPP = 1 A
at IPP = IPPM = 5 A
at VR = 0 V; f = 1 MHz
at VR = 12 V; f = 1 MHz
VC
VF
CD
-
1
1.2
-
1.4
-
V
-
65
80
pF
-
20
-
pF
ELECTRICAL CHARACTERISTICS GSOT36 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
36
V
Reverse voltage
at IR = 1 μA
VR
36
-
-
V
Reverse current
at VR = 36 V
IR
-
-
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
39
43
47
V
-
49
60
V
-
59
71
V
-
1
1.2
V
-
1.3
-
V
-
52
65
pF
-
12
-
pF
Protection paths
Reverse stand-off voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Rev. 2.8, 17-Apr-2019
at IPP = 1 A
at IPP = IPPM = 3.5 A
at IPP = 1 A
at IPP = IPPM = 3.5 A
at VR = 0 V; f = 1 MHz
at VR = 18 V; f = 1 MHz
VC
VF
CD
Document Number: 85807
6
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
Axis Title
Axis Title
100
10000
10000
120
Rise time = 0.7 ns to 1 ns
100
10
100
1st line
2nd line
2nd line
IESD (%)
0.1
1000
80
1st line
2nd line
2nd line
IF (mA)
1000
1
60
53
100
40
27
0.01
20
10
0.001
0.5
0.6
0.7
0.8
10
0
0.9
-10 0
10 20 30 40 50 60 70 80 90 100
VF (V)
t (ns)
Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 4 - ESD Discharge Current Waveform
According to IEC 61000-4-2 (330 / 150 pF)
Axis Title
Axis Title
50
40
TJ = 25 °C
80
15
10
GSOT15
60
1st line
2nd line
1000
1st line
2nd line
2nd line
VR (V)
1000
GSOT24
25
20
8 µs to 100 %
100
35
30
10000
Pin 3 to 1
GSOT36
2nd line
IPPM (%)
45
10000
20 µs to 50 %
40
100
100
GSOT12
20
GSOT08
5
0
0.01
10
1
100
10
0
10 000
0
10
20
30
40
IR (µA)
t (µs)
Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 5 - 8/20 μs Peak Pulse Current Waveform
According to IEC 61000-4-5
Axis Title
8
10000
Pin 3 to 1
7
GSOT05
6
GSOT04
Transmission line pulse (TLP):
30
GSOT03
4
3
100
2nd line
VC-TLP (V)
1st line
2nd line
TJ = 25 °C
20
GSOT08
15
GSOT05
GSOT04
GSOT03
10
1
5
10
1
100
10 000
GSOT12
25
2
0
0.01
GSOT15
35
1000
5
2nd line
VR (V)
40
0
0
20
40
60
80
100
IR (µA)
ITLP (A)
Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current
Rev. 2.8, 17-Apr-2019
Document Number: 85807
7
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
Axis Title
Transmission line pulse (TLP):
GSOT36
GSOT24
100
2nd line
VC (V)
2nd line
VC-TLP (V)
80
60
40
20
0
0
20
40
60
80
65
60
55
50
45
40
35
30
25
20
15
10
5
0
10000
GSOT36
GSOT24
1000
1st line
2nd line
120
100
Measured according IEC 61000-4-5
(8/20 µs - wave form)
10
0
100
2
4
6
8
10
ITLP (A)
IPP (A)
Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current
Fig. 9 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Axis Title
Axis Title
10000
30
1000
GSOT15
10000
f = 1 MHz
25
GSOT12
GSOT05
GSOT04
10
100
GSOT08
100
GSOT03
1000
GSOT04
GSOT05
1st line
2nd line
15
2nd line
CD (pF)
GSOT08
1st line
2nd line
2nd line
VC (V)
GSOT03
1000
20
100
GSOT12
GSOT15
5
Measured according IEC 61000-4-5
(8/20 µs - wave form)
GSOT24
0
10
0
20
40
60
10
0.01
GSOT36
0.1
1
10
10
100
IPP (A)
VR (V)
Fig. 8 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 10 - Typical Capacitance vs. Reverse Voltage
Rev. 2.8, 17-Apr-2019
Document Number: 85807
8
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23. Sep. 2009
17418
0.95 (0.037)
Unreeling direction
SOT-23
Orientation in carrier tape
SOT-23
S8-V-3929.01-006 (4)
04.02.2010
22607
Rev. 2.8, 17-Apr-2019
Top view
Document Number: 85807
9
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000
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