IRF744PBF

IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 Qgs (nC) 12 Qgd (nC) 41 Configuration COMPLIANT • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION D Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G RoHS* • Fast Switching Single TO-220 Available • Repetitive Avalanche Rated 0.63 D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF744PbF Lead (Pb)-free SiHF744-E3 IRF744 SnPb SiHF744 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 450 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 8.8 5.6 A IDM 35 1.0 W/°C Single Pulse Avalanche Energyb EAS 540 mJ Repetitive Avalanche Currenta IAR 8.8 A EAR 13 mJ PD 125 W dV/dt 3.5 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 12 mH, RG = 25 Ω IAS = 8.8 A (see fig. 12). c. ISD ≤ 8.8 A, dV/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91056 S-83029-Rev. A, 19-Jan-09 www.vishay.com 1 IRF744, SiHF744 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 450 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 450 V, VGS = 0 V - - 25 VDS = 360 V, VGS = 0 V, TJ = 125 °C - - 250 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage µA - - 0.63 Ω gfs VDS = 50 V, ID = 5.3 Ab 4.5 - - S Input Capacitance Ciss VGS = 0 V - 1400 - Output Capacitance Coss VDS = 25 V - 370 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 140 - Total Gate Charge Qg - - 80 - - 12 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 5.3 Ab VGS = 10 V Dynamic VGS = 10 V ID = 8.8 A, VDS = 360 V, Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 41 Turn-On Delay Time td(on) - 8.7 - Rise Time Turn-Off Delay Time Fall Time tr td(off) see fig. 6 and 13b LD Internal Source Inductance LS nC VDD = 225 V, ID = 8.8 A - 28 - RG = 9.1 Ω, RD = 25 Ω, see fig. 10b - 58 - - 27 - - 4.5 - - 7.5 - - - 8.8 - - 35 - - 2.0 V - 490 740 ns - 3.2 4.8 µC tf Internal Drain Inductance pF Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 8.8 A, VGS = 0 Vb TJ = 25 °C, IF = 8.8 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91056 S-83029-Rev. A, 19-Jan-09 IRF744, SiHF744 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 4.5 V ID, Drain Current (A) ID, Drain Current (A) Top 101 150 °C 25 °C 100 100 100 4 101 VDS, Drain-to-Source Voltage (V) 91056_01 20 µs Pulse Width TC = 150 °C 100 100 91056_02 4.5 V 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91056 S-83029-Rev. A, 19-Jan-09 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 5 VGS, Gate-to-Source Voltage (V) 91056_03 Fig. 1 - Typical Output Characteristics, TC = 25 °C 101 20 µs Pulse Width VDS = 50 V 20 µs Pulse Width TC = 25 °C 91056_04 3.5 3.0 ID = 8.8 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRF744, SiHF744 3000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss 500 ISD, Reverse Drain Current (A) Vishay Siliconix 150 °C 25 °C 100 Crss 0 100 0.6 103 ID, Drain Current (A) VDS = 90 V 8 4 102 5 10 µs 2 10 100 µs 5 1 ms 2 1 10 ms 5 For test circuit see figure 13 0 91056_06 20 40 60 QG, Total Gate Charge (nC) TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 1 80 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.6 2 VDS = 225 V 0 1.4 Operation in this area limited by RDS(on) 5 VDS = 360 V 12 1.2 1.0 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 8.8 A 16 0.8 VSD, Source-to-Drain Voltage (V) 91056_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 VGS = 0 V 10-1 0.4 101 VDS, Drain-to-Source Voltage (V) 91056_05 VGS, Gate-to-Source Voltage (V) 101 91056_08 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91056 S-83029-Rev. A, 19-Jan-09 IRF744, SiHF744 Vishay Siliconix RD VDS VGS 10 ID, Drain Current (A) D.U.T. RG + - VDD 10 V 8 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6 Fig. 10a - Switching Time Test Circuit 4 VDS 90 % 2 0 25 50 75 100 125 150 10 % VGS TC, Case Temperature (°C) 91056_09 td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 PDM 0.2 0.1 0.1 t1 0.05 0.02 0.01 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 10-4 10-3 10-2 0.1 10 1 t1, Rectangular Pulse Duration (s) 91056_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - IAS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91056 S-83029-Rev. A, 19-Jan-09 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRF744, SiHF744 Vishay Siliconix EAS, Single Pulse Energy (mJ) 1200 ID 3.9 A 5.6 A Bottom 8.8 A Top 1000 800 600 400 200 0 VDD = 50 V 25 91056_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS + QGD D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91056 S-83029-Rev. A, 19-Jan-09 IRF744, SiHF744 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91056. Document Number: 91056 S-83029-Rev. A, 19-Jan-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1