IRF9Z10, SiHF9Z10
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
- 60
RDS(on) ()
VGS = - 10 V
0.50
Qg (Max.) (nC)
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
S
TO-220AB
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
D
G
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF9Z10PbF
SiHF9Z10-E3
IRF9Z10
SiHF9Z10
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
- 6.7
- 4.7
A
- 27
0.29
W/°C
Single Pulse Avalanche Energyb
EAS
140
mJ
Repetitive Avalanche Currenta
IAR
- 6.7
A
Repetitive Avalanche Energya
EAR
4.3
mJ
PD
43
W
dV/dt
- 4.5
V/ns
TJ, Tstg
- 55 to + 175
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 6.23 mH, Rg = 25 , IAS = - 6.7 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 μA
- 60
-
-
V
VDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.060
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 μA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
-
-
- 100
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 4.0 Ab
VGS = - 10 V
VDS = - 25 V, ID = - 4.0 Ab
μA
-
-
0.50
1.4
-
-
S
-
270
-
-
170
-
-
31
-
-
-
12
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
3.8
Gate-Drain Charge
Qgd
-
-
5.1
Turn-On Delay Time
td(on)
-
11
-
tr
-
63
-
-
10
-
-
31
-
-
4.5
-
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13b
VDD = - 30 V, ID = - 6.7 A,
Rg = 24 , RD = 4.0, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
7.5
-
-
-
- 6.7
-
-
- 27
-
-
- 5.5
-
80
160
ns
-
0.096
0.19
μC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
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Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
101
101
100
- 4.5 V
- ID, Drain Current (A)
- ID, Drain Current (A)
Top
25 °C
175 °C
100
10-1
20 µs Pulse Width
VDS = - 25 V
20 µs Pulse Width
TC = 25 °C
10-1
10-1
100
- VDS, Drain-to-Source Voltage (V)
90118_01
4
101
100
- 4.5 V
10-1
90118_02
20 µs Pulse Width
TC = 175 °C
10-1
100
101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 ° C
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
RDS(on), Drain-to-Source On Resistance
(Normalized)
- ID, Drain Current (A)
101
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
6
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Top
5
- VGS, Gate-to-Source Voltage (V)
90118_03
90118_04
3.0
2.5
ID = - 6.7 A
VGS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
480
360
Ciss
Coss
240
120
Crss
0
100
101
100
VGS = 0 V
2.0
12
8
4
0
90118_06
3
6
9
12
10 µs
100 µs
10
5
1 ms
TC = 25 °C
TJ = 175 °C
Single Pulse
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1
15
QG, Total Gate Charge (nC)
6.0
2
2
For test circuit
see figure 13
0
5.0
4.0
Operation in this area limited
by RDS(on)
5
VDS = - 48 V
VDS = - 30 V
3.0
- VSD, Source-to-Drain Voltage (V)
102
ID = - 6.7 A
16
25 °C
Fig. 7 - Typical Source-Drain Diode Forward Voltage
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
175 °C
90118_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
101
10-1
1.0
- VDS, Drain-to-Source Voltage (V)
90118_05
- ISD, Reverse Drain Current (A)
Vishay Siliconix
1
90118_08
2
5
10
10 ms
2
5
102
- VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
RD
VDS
VGS
- ID, Drain Current (A)
D.U.T.
RG
7.5
+VDD
- 10 V
6.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
4.5
Fig. 10a - Switching Time Test Circuit
3.0
td(on)
1.5
td(off) tf
tr
VGS
10 %
0.0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
90118_09
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
D = 0.50
1
0.20
0.10
PDM
0.05
0.1
Single Pulse
(Thermal Response)
0.02
0.01
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
90118_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T.
RG
+ V DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
500
ID
- 2.7 A
- 4.7 A
Bottom - 6.7 A
Top
400
300
200
100
0
VDD = - 25 V
25
90118_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90188.
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 01-Jan-2021
1
Document Number: 91000
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