IRFB13N50A
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
• Lower gate charge Qg results in simpler drive
requirements
TO-220AB
• Improved gate, avalanche, and dynamic dV/dt
ruggedness
G
G
D
Available
• Fully characterized capacitance and avalanche
voltage
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
N-Channel MOSFET
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
500
RDS(on) (Ω)
Available
VGS = 10 V
81
Qgs (nC)
20
Qgd (nC)
36
Configuration
APPLICATIONS
0.450
Qg max. (nC)
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
• High speed power switching
Single
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRFB13N50APbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
500
Gate-source voltage
VGS
± 30
VGS at 10 V
Continuous drain current
Pulsed drain
TC = 25 °C
TC = 100 °C
current a
ID
IDM
Linear derating factor
UNIT
V
14
9.1
A
56
2.0
W/°C
mJ
Single pulse avalanche energy b
EAS
560
Repetitive avalanche current a
IAR
14
A
Repetitive avalanche energy a
EAR
25
mJ
Maximum power dissipation
TC = 25 °C
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
Mounting torque
d
For 10 s
6-32 or M3 screw
PD
250
W
dV/dt
9.2
V/ns
TJ, Tstg
-55 to +150
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 5.7 mH, Rg = 25 Ω, IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a)
c. ISD ≤ 14 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91095
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A
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Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
0.50
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.55
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-source leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-source on-state resistance
Forward transconductance
μA
-
-
0.450
Ω
gfs
VDS = 50 V, ID = 8.4 A
8.1
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1910
-
-
290
-
-
11
-
-
2730
-
RDS(on)
ID = 8.4 A b
VGS = 10 V
Dynamic
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Effective output capacitance
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-off delay time
VGS = 0 V
Coss eff.
Total gate charge
Rise time
VDS = 1.0 V, f = 1.0 MHz
tr
td(off)
Fall time
tf
Gate input resistance
Rg
VDS = 400 V, f = 1.0 MHz
-
82
-
VDS = 0 V to 400 V c
-
160
-
-
-
81
-
-
20
-
-
36
-
15
-
-
39
-
-
39
-
ID = 14 A, VDS = 400 V,
see fig. 6 and 13 b
VGS = 10 V
VDD = 250 V, ID = 14 A,
Rg = 7.5 Ω,
see fig. 10 b
f = 1 MHz, open drain
-
31
-
0.5
-
2.1
-
-
14
-
-
56
pF
nC
ns
Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Body diode reverse recovery current
IRRM
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 14 A, VGS = 0 V b
TJ = 25 °C, IF = 14 A,
TJ = 125 °C, dI/dt = 100 A/μs b
S
-
-
1.5
V
-
370
550
ns
-
4.4
6.5
μC
-
21
31
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91095
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A
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Vishay Siliconix
ID, Drain-to-Source Current (A)
102
VGS
Top
10
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
1
0.1
20 µs Pulse Width
TJ = 25 °C
10-2
0.1
VDS, Drain-to-Source Voltage (V)
91095_01
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
10
104
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
2.0
105
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
1
Ciss
103
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Coss
102
Crss
10
20 µs Pulse Width
TJ = 150 °C
1
102
10
1
VDS, Drain-to-Source Voltage (V)
91095_02
1
VDS, Drain-to-Source Voltage (V)
TJ = 150 °C
10
TJ = 25 °C
20 µs Pulse Width
VDS = 50 V
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S21-0340-Rev. C, 12-Apr-2021
VGS, Gate-to-Source Voltage (V)
12.5
0.1
103
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
102
1
102
10
91095_05
Fig. 2 - Typical Output Characteristics
ID, Drain-to-Source Current (A)
2.5
Top
0.1
0.1
91095_03
ID = 14 A
VGS = 10 V
91095_04
Fig. 1 - Typical Output Characteristics
102
3.0
102
10
1
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
ID = 14 A
VDS = 400 V
10
VDS = 250 V
VDS = 100 V
7.5
5
2.5
0
16
0
91095_06
12
24
36
48
60
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91095
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A
www.vishay.com
Vishay Siliconix
ISD, Reverse Drain Current (A)
102
VDS
VGS
D.U.T.
RG
TJ = 150 °C
10
RD
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
TJ = 25 °C
1
Fig. 10a - Switching Time Test Circuit
VGS = 0 V
0.1
0.2
0.5
0.8
1.1
1.4
VDS
90 %
VSD, Source-to-Drain Voltage (V)
91095_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10 %
VGS
ID, Drain Current (A)
103
td(on)
Operation in this area limited
by RDS(on)
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
102
100 µs
10
1 ms
1
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
102
103
10
104
VDS, Drain-to-Source Voltage (V)
91095_08
Fig. 8 - Maximum Safe Operating Area
15
ID, Drain Current (A)
12
9
6
3
0
25
91095_09
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91095
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A
www.vishay.com
Vishay Siliconix
Thermal Response (ZthJC)
1
D = 0.50
0.1
10-2
0.20
0.10
0.05
0.02
0.01
PDM
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
10-3
10-5
10-4
10-3
10-2
0.1
1
t1, Rectangular Pulse Duration (s)
91095_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1150
ID
15 V
Driver
L
VDS
D.U.T.
RG
+
A
- VDD
IAS
20 V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
VDS
tp
EAS, Single Pulse Avalanche Energy (mJ)
920
TOP
6.3A
BOTTOM
8.9A
14A
690
460
230
0
25
50
75
100
125
150
Starting Tj, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
IAS
Fig. 12b - Unclamped Inductive Waveforms
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91095
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A
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Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
Period
P.W.
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91095.
S21-0340-Rev. C, 12-Apr-2021
Document Number: 91095
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
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Vishay
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Revision: 01-Jan-2022
1
Document Number: 91000